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CSD23381F4

ACTIVE

-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 175 mOhm, gate ESD protection

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Data sheet

CSD23381F4

ACTIVE
Data sheet Order now

Product details

VDS (V) -12 VGS (V) -8 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 175 Rds(on) at VGS=2.5 V (max) (mΩ) 300 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 1.14 QGD (typ) (nC) 0.19 QGS (typ) (nC) 0.3 ID - silicon limited at TC=25°C (A) 2.3 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) -12 VGS (V) -8 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 175 Rds(on) at VGS=2.5 V (max) (mΩ) 300 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 1.14 QGD (typ) (nC) 0.19 QGS (typ) (nC) 0.3 ID - silicon limited at TC=25°C (A) 2.3 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
PICOSTAR (YJC) 3 0.657225 mm² 1.035 x 0.635
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • Maximum height: 0.36 mm
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Ultra-low on-resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Ultra-low profile
    • Maximum height: 0.36 mm
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet CSD23381F4 12-V P-Channel FemtoFET™ MOSFET datasheet (Rev. G) PDF | HTML 10 Mar 2022
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 31 Oct 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML 27 Oct 2025
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
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Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Support software

LOAD-SWITCH-FET-LOSS-CALC — Power Loss Calculation Tool for Load Switch

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Supported products & hardware

Supported products & hardware
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Simulation model

CSD23381F4 TINA-TI Spice Model (Rev. A)

SLPM091A.TSM (7 KB) - TINA-TI Spice Model
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Simulation model

CSD23381F4 Unencrypted PSpice Model (Rev. C)

SLPM089C.ZIP (3 KB) - PSpice Model
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