3 Description

This 66-mΩ, 12-V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Device Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-source voltage	–12		V
Q_g	Gate charge total (–4.5 V)	1.04		nC
Q_gd	Gate charge gate-to-drain	0.15		nC
R_DS(on)	Drain-to-source on-resistance	V_GS = –1.8 V	149	mΩ
		V_GS = –2.5 V	90
		V_GS = –4.5 V	66
V_GS(th)	Threshold voltage	–0.8		V

Ordering Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD23382F4	3000	7-inch reel	Femto (0402) 1.0 mm × 0.6 mm Land Grid Array (LGA)	Tape and reel
CSD23382F4T	250	7-inch reel	Femto (0402) 1.0 mm × 0.6 mm Land Grid Array (LGA)	Tape and reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-source voltage	–12	V
V_GS	Gate-to-source voltage	±8	V
I_D	Continuous drain current⁽¹⁾	–3.5	A
I_DM	Pulsed drain current, T_A = 25°C⁽²⁾	–22	A
I_G	Continuous gate clamp current	–35	mA
I_G	Pulsed gate clamp current⁽²⁾	–350	mA
P_D	Power dissipation⁽¹⁾	500	mW
V_(ESD)	Human body model (HBM)	2	kV
V_(ESD)	Charged device model (CDM)	2	kV
T_J, T_stg	Operating junction and storage temperature range	–55 to 150	°C

(1) Typical R_θJA = 85°C/W on 1-inch² (6.45 cm²), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52 mm) thick FR4 PCB.

(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%

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