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Product details

Parameters

VDS (V) -12 VGS (V) -8 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 76 Rds(on) max at VGS=2.5 V (mOhms) 105 Rds(on) max at VGS=1.8 V (mOhms) 199 Id peak (Max) (A) -22 Id max cont (A) -3.5 QG typ (nC) 1.04 QGD typ (nC) 0.15 QGS typ (nC) 0.5 VGSTH typ (V) -0.8 Package (mm) LGA 0.6x1.0 open-in-new Find other P-channel MOSFET transistors

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Pb Terminal Plating
  • Halogen Free
  • RoHS Compliant
open-in-new Find other P-channel MOSFET transistors

Description

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

open-in-new Find other P-channel MOSFET transistors
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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 7
Type Title Date
* Datasheet CSD23382F4 12 V P-Channel FemtoFET MOSFET datasheet (Rev. C) Oct. 20, 2014
Technical articles What type of ESD protection does your MOSFET include? Jun. 22, 2020
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
User guide Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM Dec. 06, 2017
User guide FemtoFET Surface Mount Guide (Rev. D) Jul. 07, 2016
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARD Download
79
Description

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (...)

Features
  • Easy handling of these Land Grid Array (LGA) packaged parts
  • Full range of Vds and package size
  • Seven daughter cards can be snapped to create individual boards, with one FET per daughter card
  • FemtoFETs have the best Size*Resistance in the FET industry

Software development

SUPPORT SOFTWARE Download
SLPC019.ZIP (338 KB)

Design tools & simulation

SIMULATION MODEL Download
SLPM120A.ZIP (3 KB) - PSpice Model
SIMULATION MODEL Download
SLPM289.TSC (1045 KB) - TINA-TI Reference Design
SIMULATION MODEL Download
SLPM290.ZIP (9 KB) - TINA-TI Spice Model
CALCULATION TOOL Download
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
Features
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)

Reference designs

REFERENCE DESIGNS Download
Load Switch Based Ship Mode Reference Design for Wearables
TIDA-00556 The purpose of this design is to showcase a low power, space saving "ship mode" solution targeted specifically for wearables and other small portable electronics that can be implemented with a simple, low cost load switch.
document-generic Schematic

CAD/CAE symbols

Package Pins Download
(YJC) 3 View options

Ordering & quality

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