SLPS296B February 2012 – September 2022 CSD25211W1015
PRODUCTION DATA
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Electrical Characteristics
- 6 Thermal Characteristics
- 7 Typical MOSFET Characteristics
- 8 Mechanical Data
- 9 Electrostatic Discharge Caution
- 10Device and Documentation Support
Package Options
Refer to the PDF data sheet for device specific package drawings
Mechanical Data (Package|Pins)
- YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
Figure 3-1 Top ViewProduct Summary
| TA = 25°C unless otherwise stated | TYPICAL VALUE | UNIT | ||
| VDS | Drain-to-Source Voltage | –20 | V | |
| Qg | Gate Charge Total (–4.5V) | 3.4 | nC | |
| Qgd | Gate Charge Gate to Drain | 0.2 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = –2.5 V | 36 | mΩ |
| VGS = –4.5 V | 27 | mΩ | ||
| VGS(th) | Voltage Threshold | –0.8 | V | |
Ordering Information
| Device | Package | Media | Qty | Ship |
|---|---|---|---|---|
| CSD25211W1015 | 1 × 1.5 Wafer Level Package | 7-inch reel | 3000 | Tape and Reel |
Absolute Maximum Ratings
| TA = 25°C unless otherwise stated | VALUE | UNIT | |
| VDS | Drain-to-Source Voltage | -20 | V |
| VGS | Gate-to-Source Voltage | -6 | V |
| ID | Continuous Drain Current, TA = 25°C(1) | -3.2 | A |
| IDM | Pulsed Drain Current, TA = 25°C(2) | -9.5 | A |
| IG | Continuous Gate Current, TA = 25°C | -0.5 | A |
| Pulsed Gate Current | -7 | A | |
| PD | Power Dissipation(1) | 1 | W |
| TSTG | Storage Temperature Range | –55 to 150 | °C |
| TJ | Operating Junction Temperature Range | ||
(1) Typical RθJA = 119°C/W on 1 inch2 of 2 oz. Cu on 0.06-inch thick FR4 PCB.
(2) Pulse width ≤ 10 µs, duty cycle ≤ 2%
RDS(ON) vs
VGS
Gate Charge