-20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection



Product details


VDS (V) -20 VGS (V) -6 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 33 Rds(on) max at VGS=2.5 V (mOhms) 44 Id peak (Max) (A) -9.5 Id max cont (A) -3.2 QG typ (nC) 3.4 QGD typ (nC) 0.2 QGS typ (nC) 1.1 VGSTH typ (V) -0.8 Package (mm) WLP 1.0x1.5 open-in-new Find other P-channel MOSFET transistors

Package | Pins | Size

DSBGA (YZC) 6 3 mm² 1.006 x 1.5 open-in-new Find other P-channel MOSFET transistors


  • Ultra-Low On Resistance
  • Ultra-Low Qg and Qgd
  • Small Footprint 1.0 mm × 1.5 mm
  • Low Profile 0.62 mm Height
  • Pb Free
  • Gate-Source Voltage Clamp
  • Gate ESD Protection – 3 kV
  • RoHS Compliant
  • Halogen Free

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The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

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Technical documentation

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Type Title Date
* Datasheet CSD25211W1015, P-Channel NexFET Power MOSFET datasheet (Rev. A) Jan. 16, 2014
Technical article Understanding the benefits of “lead-free” power MOSFETs Feb. 08, 2019
Technical article When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

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Software development

SLPC019.ZIP (338 KB)

Design tools & simulation

SLPM338.ZIP (3 KB) - PSpice Model

CAD/CAE symbols

Package Pins Download
DSBGA (YZC) 6 View options

Ordering & quality

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  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

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