SLPS551B May   2015  – February 2022 CSD25484F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Support Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD68830F4 Embossed Carrier Tape Dimensions

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = –250 μA–20V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = –16 V–100nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = –12 V–50nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = –250 μA–0.7–0.95–1.2V
RDS(on)Drain-to-source on-resistanceVGS = –1.8 V, IDS = –0.1 A405825mΩ
VGS = –2.5 V, IDS = –0.5 A150180
VGS = –4.5 V, IDS = –0.5 A93109
VGS = –8 V, IDS = –0.5 A8094
gfsTransconductanceVDS = –10 V, IDS = –0.5 A3.5S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = –10 V,
ƒ = 1 MHz		175230pF
CossOutput capacitance78102pF
CrssReverse transfer capacitance5.57.2pF
RGSeries gate resistance20Ω
QgGate charge total (–4.5 V)VDS = –10 V, IDS = –0.5 A10901415pC
QgdGate charge gate-to-drain150pC
QgsGate charge gate-to-source350pC
Qg(th)Gate charge at Vth210pC
QossOutput chargeVDS = –10 V, VGS = 0 V1290pC
td(on)Turnon delay timeVDS = –10 V, VGS = –4.5 V,
IDS = –0.5 A, RG = 10 Ω		9.5ns
trRise time5ns
td(off)Turnoff delay time18ns
tfFall Time8.5ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = –0.5 A, VGS = 0 V–0.75V
QrrReverse recovery chargeVDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs970pC
trrReverse recovery time7.5ns