3 Description

This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Figure 3-1 Typical Package Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-source voltage	–20		V
Q_g	Gate charge total (–4.5 V)	1090		pC
Q_gd	Gate charge gate-to-drain	150		pC
R_DS(on)	Drain-to-source on-resistance	V_GS = –1.8 V	405	mΩ
		V_GS = –2.5 V	150
		V_GS = –4.5 V	93
		V_GS = –8.0 V	80
V_GS(th)	Threshold voltage	–0.95		V

Device Information

DEVICE	QTY	MEDIA	PACKAGE⁽¹⁾	SHIP
CSD25484F4	3000	7-Inch Reel	Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA)	Tape and Reel
CSD25484F4T	250	7-Inch Reel	Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA)	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-source voltage	–20	V
V_GS	Gate-to-source voltage	–12	V
I_D	Continuous drain current⁽¹⁾	–2.5	A
I_DM	Pulsed drain current⁽¹⁾⁽²⁾	–22	A
I_G	Continuous gate clamp current	–35	mA
I_G	Pulsed gate clamp current⁽²⁾	–350	mA
P_D	Power dissipation⁽¹⁾	500	mW
V_(ESD)	Human-body model (HBM)	4	kV
V_(ESD)	Charged-device model (CDM)	2	kV
T_J, T_stg	Operating junction, storage temperature	–55 to 150	°C

(1) Typical R_θJA = 85°C/W on 1-in² (6.45-cm²), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.

(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

Figure 3-2 Top View