SLPS494C November 2014 – November 2023 CSD83325L
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Specifications
- 5Device and Documentation Support
- 6Revision History
- 7Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- YJE|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
Top View
ConfigurationProduct Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VS1S2 | Source-to-Source Voltage | 12 | V | |
| Qg | Gate Charge Total (4.5 V) | 8.4 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 1.9 | nC | |
| RS1S2(on) | Source-to-Source On Resistance | VGS = 2.5 V | 17.5 | mΩ |
| VGS = 3.8 V | 10.9 | mΩ | ||
| VGS = 4.5 V | 9.9 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.0 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD83325L | 3000 | 7-Inch Reel | 2.20-mm × 1.15-mm Land Grid Array (LGA) Package |
Tape and Reel |
| CSD83325LT | 250 |
(1) For all available packages, see the orderable addendum at the
end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VS1S2 | Source-to-Source Voltage | 12 | V |
| VGS | Gate-to-Source Voltage | ±10 | V |
| IS | Continuous Source Current(1) | 8 | A |
| ISM | Pulsed Source Current(2) | 52 | A |
| PD | Power Dissipation | 2.3 | W |
| V(ESD) | Human-Body Model (HBM) | 2000 | V |
| TJ, Tstg |
Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
(1) Device operating at a temperature of 105°C.
(2) Typical min Cu RθJA = 150°C/W, pulse duration ≤ 100
μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate
Charge |