Product details


VDS (V) 12 Configuration Dual Common Drain Rds(on) max at VGS=4.5 V (mOhms) 5.9 IDM, max pulsed drain current (Max) (A) 52 QG typ (nC) 8.4 QGD typ (nC) 1.9 Package (mm) LGA VGS (V) 10 VGSTH typ (V) 0.95 Logic level Yes open-in-new Find other N-channel MOSFET transistors


  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection
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This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 4
Type Title Date
* Datasheet CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET datasheet (Rev. B) Feb. 16, 2017
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Design tools & simulation

SLPM144A.ZIP (4 KB) - PSpice Model
Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)
Power loss calculation tool for non-synchronous boost converter
NONSYNC-BOOST-FET-LOSS-CALC — MOSFET power loss calculator for non-synchronous boost converter
  • Calculates power loss for TI MOSFETs

Reference designs

USB-C DRP Power Bank With Fast Charger Input Reference Design
PMP4496 PMP4496 is a power bank reference design with a single USB type C dual role port (DRP). It can perform as a SINK or SOURCE. Role is automatically determined according to the external device attached. Fast charger input is also supported to save more charging time.
document-generic Schematic
Smartwatch Battery Management Solution Reference Design
TIDA-00712 The TI design TIDA-00712 is a reference design for Smartwatch BMS (Battery Management Solution); It’s suitable for low power wearable devices like smartwatch applications. The design includes an ultra-low current 1 cell Li-ion linear charger; a highly integrated Qi-compliant wireless power (...)
document-generic Schematic

CAD/CAE symbols

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Ordering & quality

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  • Device marking
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  • MSL rating/Peak reflow
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