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CSD83325L

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12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection

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Data sheet
12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection

CSD83325L

ACTIVE
Data sheet Order now

Product details

VDS (V) 12 Configuration Dual Common Drain Rds(on) max at VGS=4.5 V (mOhms) 5.9 IDM - pulsed drain current (Max) (A) 52 QG typ (nC) 8.4 QGD typ (nC) 1.9 Package (mm) LGA 2.2x1.2mm VGS (V) 10 VGSTH typ (V) 0.95 ID - silicon limited at Tc=25degC (A) 8 ID - package limited (A) 8 Logic level Yes
VDS (V) 12 Configuration Dual Common Drain Rds(on) max at VGS=4.5 V (mOhms) 5.9 IDM - pulsed drain current (Max) (A) 52 QG typ (nC) 8.4 QGD typ (nC) 1.9 Package (mm) LGA 2.2x1.2mm VGS (V) 10 VGSTH typ (V) 0.95 ID - silicon limited at Tc=25degC (A) 8 ID - package limited (A) 8 Logic level Yes
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  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection
  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection
open-in-new Find other N-channel MOSFETs

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

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Technical documentation

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Type Title Date
* Data sheet CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET datasheet (Rev. B) 16 Feb 2017
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

CSD83325L Unencrypted PSpice Model (Rev. B)

SLPM144B.ZIP (5 KB) - PSpice Model
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Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
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Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

MOSFET power loss calculator for synchronous buck converter applications
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Reference designs

PMP4496 — USB-C DRP Power Bank With Fast Charger Input Reference Design

PMP4496 is a power bank reference design with a single USB type C dual role port (DRP). It can perform as a SINK or SOURCE. Role is automatically determined according to the external device attached. Fast charger input is also supported to save more charging time.
document-pdfAcrobat Schematic
Reference designs

TIDA-00712 — Smartwatch Battery Management Solution Reference Design

This reference design is for smartwatch battery management solution (BMS). It is suitable for low-power wearable devices like smartwatch applications. The design includes an ultra-low current 1 cell Li-ion linear charger; a highly integrated Qi-compliant wireless power receiver; a (...)
document-pdfAcrobat Schematic
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Ordering & quality

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  • Ongoing reliability monitoring

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