Product details

VDS (V) 12 Configuration Dual Common Drain Rds(on) max at VGS=4.5 V (mOhms) 5.9 IDM - pulsed drain current (Max) (A) 52 QG typ (nC) 8.4 QGD typ (nC) 1.9 Package (mm) LGA 2.2x1.2mm VGS (V) 10 VGSTH typ (V) 0.95 ID - silicon limited at Tc=25degC (A) 8 ID - package limited (A) 8 Logic level Yes
VDS (V) 12 Configuration Dual Common Drain Rds(on) max at VGS=4.5 V (mOhms) 5.9 IDM - pulsed drain current (Max) (A) 52 QG typ (nC) 8.4 QGD typ (nC) 1.9 Package (mm) LGA 2.2x1.2mm VGS (V) 10 VGSTH typ (V) 0.95 ID - silicon limited at Tc=25degC (A) 8 ID - package limited (A) 8 Logic level Yes
  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection
  • Common Drain Configuration
  • Low-On Resistance
  • Small Footprint of 2.2 mm × 1.15 mm
  • Lead Free
  • RoHS Compliant
  • Halogen Free
  • Gate ESD Protection

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

Download

Technical documentation

star = Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 4
Type Title Date
* Data sheet CSD83325L 12-V Dual N-Channel NexFET™ Power MOSFET datasheet (Rev. B) 16 Feb 2017
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

CSD83325L Unencrypted PSpice Model (Rev. B)

SLPM144B.ZIP (5 KB) - PSpice Model
Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

MOSFET power loss calculator for synchronous buck converter applications
Reference designs

PMP4496 — USB-C DRP Power Bank With Fast Charger Input Reference Design

PMP4496 is a power bank reference design with a single USB type C dual role port (DRP). It can perform as a SINK or SOURCE. Role is automatically determined according to the external device attached. Fast charger input is also supported to save more charging time.
Reference designs

TIDA-00712 — Smartwatch Battery Management Solution Reference Design

This reference design is for smartwatch battery management solution (BMS). It is suitable for low-power wearable devices like smartwatch applications. The design includes an ultra-low current 1 cell Li-ion linear charger; a highly integrated Qi-compliant wireless power receiver; a (...)
Package Pins Download
(YJE) 6 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos