SLPS384D March   2013  – April 2015 CSD87588N

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Power Block Device Characteristics
    7. 5.7 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Power Loss Curves
      2. 6.1.2 Safe Operating Curves (SOA)
      3. 6.1.3 Normalized Curves
      4. 6.1.4 Calculating Power Loss and SOA
        1. 6.1.4.1 Design Example
        2. 6.1.4.2 Calculating Power Loss
        3. 6.1.4.3 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Layout Guidelines
      1. 7.1.1 Electrical Performance
      2. 7.1.2 Thermal Performance
    2. 7.2 Layout Example
  8. 8Device and Documentation Support
    1. 8.1 Trademarks
    2. 8.2 Electrostatic Discharge Caution
    3. 8.3 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 CSD87588N Package Dimensions
    2. 9.2 Land Pattern Recommendation
    3. 9.3 Stencil Recommendation (100 µm)
    4. 9.4 Stencil Recommendation (125 µm)
    5. 9.5 Pin Drawing
    6. 9.6 CSD87588N Embossed Carrier Tape Dimensions

Package Options

Mechanical Data (Package|Pins)
  • MPA|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8 Device and Documentation Support

8.1 Trademarks

NexFET is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

8.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

8.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.