SLPS456A February   2014  – December 2023 CSD88539ND

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Trademarks
    2. 5.2 Electrostatic Discharge Caution
  7. 6Revision History
  8. 7Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low-current motor control applications.

GUID-B632D4AF-F4E1-46E9-AD82-E59BA1AFC80A-low.gif Figure 3-1 Top View
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 7.2 nC
Qgd Gate Charge Gate to Drain 1.1 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 27 mΩ
VGS = 10 V 23 mΩ
VGS(th) Threshold Voltage 3.0 V
Ordering Information(1)
Device Qty Media Package Ship
CSD88539ND 2500 13-Inch Reel SO-8 Plastic Package Tape and Reel
CSD88539NDT 250 7-Inch Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 15 A
Continuous Drain Current (Silicon limited), TC = 25°C 11.7
Continuous Drain Current(1) 6.3
IDM Pulsed Drain Current (2) 46 A
PD Power Dissipation(1) 2.1 W
TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 22 A, L = 0.1 mH, RG = 25 Ω		 24 mJ
(1) Typical RθJA = 60°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB
(2) Pulse duration ≤300 μs, duty cycle ≤2%
GUID-AE88F349-CB98-4C7D-A387-60445CF270F5-low.pngRDS(on) vs VGS
GUID-DC213175-1BBB-4971-BD40-D892DBCAF37B-low.pngGate Charge