Home Power management MOSFETs
Home
Power management
MOSFETs

CSD88539ND

ACTIVE

60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm

Order now
Data sheet

CSD88539ND

ACTIVE
Data sheet Order now

Product details

VDS (V) 60 VGS (V) 20 Type N-channel Configuration Dual Rds(on) at VGS=10 V (max) (mΩ) 28 VGSTH typ (typ) (V) 3 QG (typ) (nC) 14 QGD (typ) (nC) 2.3 QGS (typ) (nC) 4.6 ID - silicon limited at TC=25°C (A) 11.7 ID - package limited (A) 15 Logic level No Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 60 VGS (V) 20 Type N-channel Configuration Dual Rds(on) at VGS=10 V (max) (mΩ) 28 VGSTH typ (typ) (V) 3 QG (typ) (nC) 14 QGD (typ) (nC) 2.3 QGS (typ) (nC) 4.6 ID - silicon limited at TC=25°C (A) 11.7 ID - package limited (A) 15 Logic level No Rating Catalog Operating temperature range (°C) -55 to 150
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Ultra-Low Q g and Q gd
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • Ultra-Low Q g and Q gd
  • Avalanche Rated
  • Pb Free
  • RoHS Compliant
  • Halogen Free

This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low-current motor control applications.

This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low-current motor control applications.
filter Find other MOSFETs
Download

Technical documentation

No results found. Please clear your search and try again.
View all 1
Top documentation Type Title Format options Date
* Data sheet CSD88539ND Dual 60 V N-ChannelNexFETPower MOSFETs datasheet (Rev. A) PDF | HTML Dec 7, 2023

Ordering & quality

Support & training

TI E2E™ forums with technical support from TI engineers

View all forum topics

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​