SLVSEE3C november   2017  – may 2023 DRV3245Q-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Revision History
  6. 5Device and Documentation Support
    1. 5.1 Device Support
      1. 5.1.1 Device Nomenclature
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Option Addendum
    2. 7.2 Tape and Reel Information
    3. 7.3 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1:
      –40°C to +125°C, TA
  • SafeTI™semiconductor component
    • Developed according to the applicable requirements of ISO 26262
  • 4.5-V to 45-V operating voltage
  • Programmable peak gate drive currents up to 1A
  • Charge-pump gate driver for 100% Duty Cycle
  • Current-shunt amplifiers and phase comparators
    • A / C Device: 3 current-shunt amplifiers(1) and 3-phase comparators with status through SPI (1)
    • B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pins
    • S Device: 3 current-shunt amplifiers
  • 3-PWM or 6-PWM input control up to 20 kHz
  • Single PWM-mode commutation capability
  • Supports both 3.3-V and 5-V digital interface
  • Serial peripheral interface (SPI)
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Internal regulators, battery voltage monitor
    • SPI CRC
    • Clock monitor
    • Analog built-in self test
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-source voltage real time monitor
    • Overtemperature warning and Shutdown
1. C device : Low-drift offset high-precision amplifiers