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DRV3245Q-Q1

ACTIVE

Automotive grade 1 12-V battery 3-phase gate driver unit with accurate current sensing & enhanced pr

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Data sheet

DRV3245Q-Q1

ACTIVE
Data sheet Order now

Product details

Rating Automotive Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM, 1xPWM Gate drive (A) 1 Vs (Min) (V) 4.5 Vs ABS (Max) (V) 45 Features Current Sense Amplifier, SPI/I2C, Phase Comparators, Watchdog Timer Operating temperature range (C) -40 to 125 TI functional safety category Functional Safety-Compliant
Rating Automotive Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM, 1xPWM Gate drive (A) 1 Vs (Min) (V) 4.5 Vs ABS (Max) (V) 45 Features Current Sense Amplifier, SPI/I2C, Phase Comparators, Watchdog Timer Operating temperature range (C) -40 to 125 TI functional safety category Functional Safety-Compliant
HTQFP (PHP) 48 49 mm² 7 x 7
  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1:
      –40°C to +125°C, TA
  • SafeTI™semiconductor component
    • Developed according to the applicable requirements of ISO 26262
  • 4.5-V to 45-V operating voltage
  • Programmable peak gate drive currents up to 1A
  • Charge-pump gate driver for 100% Duty Cycle
  • Current-shunt amplifiers and phase comparators
    • A / C Device: 3 current-shunt amplifiers(1) and 3-phase comparators with status through SPI (1)
    • B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pins
  • 3-PWM or 6-PWM input control up to 20 kHz
  • Single PWM-mode commutation capability
  • Supports both 3.3-V and 5-V digital interface
  • Serial peripheral interface (SPI)
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Internal regulators, battery voltage monitor
    • SPI CRC
    • Clock monitor
    • Analog built-in self test
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-source voltage real time monitor
    • Overtemperature warning and Shutdown

(1)C device : Low-drift offset high-precision amplifiers

  • AEC-Q100 qualified for automotive applications:
    • Device temperature grade 1:
      –40°C to +125°C, TA
  • SafeTI™semiconductor component
    • Developed according to the applicable requirements of ISO 26262
  • 4.5-V to 45-V operating voltage
  • Programmable peak gate drive currents up to 1A
  • Charge-pump gate driver for 100% Duty Cycle
  • Current-shunt amplifiers and phase comparators
    • A / C Device: 3 current-shunt amplifiers(1) and 3-phase comparators with status through SPI (1)
    • B Device: 2 current-shunt amplifiers and 3-phase comparators with real-time monitor through digital pins
  • 3-PWM or 6-PWM input control up to 20 kHz
  • Single PWM-mode commutation capability
  • Supports both 3.3-V and 5-V digital interface
  • Serial peripheral interface (SPI)
  • Thermally-enhanced 48-Pin HTQFP
  • Protection features:
    • Internal regulators, battery voltage monitor
    • SPI CRC
    • Clock monitor
    • Analog built-in self test
    • Programmable dead-time control
    • MOSFET shoot-through prevention
    • MOSFET VDS overcurrent monitors
    • Gate-source voltage real time monitor
    • Overtemperature warning and Shutdown

(1)C device : Low-drift offset high-precision amplifiers

The DRV3245Q-Q1 device is a FET gate driver IC for three-phase motor-drive applications designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration of the driver and its peripherals enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components.

The DRV3245Q-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures.

The DRV3245Q-Q1 device is a FET gate driver IC for three-phase motor-drive applications designed according to the applicable requirements of ISO 26262 for functional safety applications. The device provides three half-bridge drivers each capable of driving a high-side and low-side N-channel MOSFET while also providing sophisticated protection and monitoring of the FETs. A charge-pump driver enables 100% duty cycle and supports low battery voltages during cold-crank operation. The integration of current-sense amplifiers, integrated phase comparators, and SPI-based configuration of the driver and its peripherals enable reduction of the bill of materials (BOM) and space on the printed circuit board (PCB) because of the elimination of most external and passive components.

The DRV3245Q-Q1 device also integrates diagnostics and protection for each internal block and provides support for common system diagnostic checks each of which can be instantiated and reported through SPI. This flexibility of the integrated features allows the device to integrate seamlessly into a variety of safety architectures.
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Evaluation module (BOOSTXL-DRV3245AQ1) is available. Request now

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Technical documentation

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Type Title Date
* Data sheet DRV3245Q-Q1 3-Phase Automotive Gate Driver Unit (GDU) With High Performance Sensing, Protection and Diagnostics datasheet (Rev. B) 24 Oct 2019
Technical article Understanding brushless-DC motor systems, part 2 20 Oct 2021
Technical article Understanding brushless-DC motor systems, part 1 18 Oct 2021
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) 14 Oct 2021
Technical article A basic brushless gate driver design – part 3: integrated vs. discrete half bridges 16 Dec 2020
White paper 電気自動車と自動運転車の機能安全システムのアクチュエータ設計動向 30 Mar 2020
White paper Actuator Design Trends for Funct. Safety Sys. in Elect. and Autonomous Vehicles 29 Jan 2020
Application note Protecting Automotive Motor Drive Systems from Reverse Polarity Conditions (Rev. A) 19 Feb 2019
Technical article Connectivity helps integrate intelligent motor control on a single MCU 06 Jun 2018
Application note Designing High-Side and 3-Phase Isolator MOSFET Circuits in Motor Apps 09 May 2018
White paper Analog components advance functional safety development for automotive applicati 20 Jan 2017

Design & development

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Evaluation board

BOOSTXL-DRV3245AQ1 — DRV3245Q-Q1 Automotive 3-Phase Motor Gate Driver Evaluation Module

The Texas Instruments BOOSTXL-DRV3245AQ1 evaluation module (EVM) helps designers evaluate the operation and performance of the DRV3245AQPHPRQ1 motor gate driver. The EVM utilizes a compact and modular form for ease of use and is designed to dock with compatible TI LaunchPads for a complete (...)
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Simulation model

DRV3245Q-Q1 IBIS MODEL

SLVMD47.ZIP (16 KB) - IBIS Model
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HTQFP (PHP) 48 View options

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