SLIS150K March   2014  – August 2019 DRV5013

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Output State
      2.      Device Packages
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Magnetic Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Field Direction Definition
      2. 7.3.2 Device Output
      3. 7.3.3 Power-On Time
      4. 7.3.4 Output Stage
      5. 7.3.5 Protection Circuits
        1. 7.3.5.1 Overcurrent Protection (OCP)
        2. 7.3.5.2 Load Dump Protection
        3. 7.3.5.3 Reverse Supply Protection
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Standard Circuit
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Configuration Example
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Alternative Two-Wire Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
      2. 11.1.2 Device Markings
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Revision History

Changes from J Revision (June 2019) to K Revision

  • Changed TJ to show existing range is for Q version device in the Absolute Maximum Ratings tableGo
  • Added E version for TJ to the Absolute Maximum Ratings tableGo
  • Changed TA to show existing range is for Q version device in the Recommended Operating Conditions tableGo
  • Added E version for TA to the Recommended Operating Conditions tableGo
  • Changed ICC test condition for TA from 125 to TA,MAX to highlight the differences between the E and Q version devices.Go
  • Changed rDS(on) test condition for TA from 125 to TA,MAX to highlight the difference between the E and Q version devicesGo
  • Changed all test conditions for TA max from 125 to TA,MAX to highlight difference between the E and Q devices Go
  • Added new condition statement to Typical Characteristics sectionGo
  • Added data up to 150°C to Figure 1, Figure 2, Figure 4, Figure 6, Figure 8, and Figure 10Go

Changes from I Revision (August 2018) to J Revision

  • Added TO-92 (LPE) package to data sheet Go

Changes from H Revision (September 2016) to I Revision

  • Changed Power Supply Recommendations section Go

Changes from G Revision (August 2016) to H Revision

  • Changed the power-on time for the FA version in the Electrical Characteristics tableGo

Changes from F Revision (May 2016) to G Revision

  • Changed the maximum BOP and the minimum BRP for the FA version in the Magnetic Characteristics tableGo
  • Added the Layout sectionGo

Changes from E Revision (February 2016) to F Revision

  • Revised preliminary limits for the FA versionGo

Changes from D Revision (December 2015) to E Revision

  • Added the FA device optionGo
  • Added the typical bandwidth value to Magnetic Characteristics tableGo

Changes from C Revision (September 2014) to D Revision

  • Corrected body size of SOT-23 package and SIP package name to TO-92 Go
  • Added BMAX to Absolute Maximum RatingsGo
  • Removed table note from junction temperature Go
  • Updated package tape and reel options for M and blank Go
  • Added Community ResourcesGo

Changes from B Revision (July 2014) to C Revision

  • Updated high sensitivity options Go
  • Changed the max operating junction temperature to 150°C Go
  • Updated the output rise and fall time typical values and removed max values in Switching CharacteristicsGo
  • Updated the values in Magnetic CharacteristicsGo
  • Updated all Typical Characteristics graphs Go
  • Updated Equation 4Go
  • Updated Figure 24Go

Changes from A Revision (March 2014) to B Revision

  • Changed IOCP MIN and MAX values from 20 and 40 to 15 and 45, respectively, in the Electrical CharacteristicsGo
  • Updated the hysteresis values for each device option in the Magnetic Characteristics tableGo
  • Changed the MIN value for the ±2.3 mt BRP parameter from –4 to –5 in the Magnetic Characteristics table Go

Changes from * Revision (March 2014) to A Revision

  • Changed all references to Hall IC to Hall Effect Sensor Go
  • Changed RPM Meter to Tachometers in the Applications list Go
  • Changed the power-on value from 50 to 35 µs in the Features list Go
  • Changed the type of the OUT terminal from OD to Output in the Pin Functions table Go
  • Deleted Output pin current and changed VCCmax to VCC after the voltage ramp rate for the supply voltageGo
  • Changed RO to R1 in the test conditions for tr and tf in the Switching Characteristics tableGo
  • Added the bandwidth parameter to Magnetic Characteristics table Go
  • Changed the MIN value for the ±2.3 mt BRP parameter from +2.3 to –2.3 in the Magnetic Characteristics table Go
  • Deleted condition statement from the Typical Characteristics and changed all TJ to TA in the graph conditions Go
  • Deleted Number from the Power-On Time case names; added conditions to captions of case timing diagrams Go
  • Added the R1 tradeoff and lower current text after the equation in the Output Stage section Go
  • Added the C2 not required for most applications text after the second equation in the Output Stage sectionGo
  • Changed IO to ISINK in condition statement of FET overload fault condition in Reverse Supply Protection sectionGo