SLVSGY3A July   2022  – October 2022 DRV8300U

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings Comm
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Diagrams
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three BLDC Gate Drivers
        1. 8.3.1.1 Gate Drive Timings
          1. 8.3.1.1.1 Propagation Delay
          2. 8.3.1.1.2 Deadtime and Cross-Conduction Prevention
        2. 8.3.1.2 Mode (Inverting and non inverting INLx)
      2. 8.3.2 Pin Diagrams
      3. 8.3.3 Gate Driver Protective Circuits
        1. 8.3.3.1 VBSTx Undervoltage Lockout (BSTUV)
        2. 8.3.3.2 GVDD Undervoltage Lockout (GVDDUV)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Bootstrap Capacitor and GVDD Capacitor Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10 Power Supply Recommendations

The DRV8300U is designed to operate from an input voltage supply (GVDD) range from 4.8 V to 20 V. A local bypass capacitor should be placed between the GVDD and GND pins. This capacitor should be located as close to the device as possible. A low ESR, ceramic surface mount capacitor is recommended. It is recommended to use two capacitors across GVDD and GND: a low capacitance ceramic surface-mount capacitor for high frequency filtering placed very close to GVDD and GND pin, and another high capacitance value surfacemount capacitor for device bias requirements. In a similar manner, the current pulses delivered by the GHx pins are sourced from the BSTx pins. Therefore, capacitor across the BSTx to SHx is recommended, it should be high enough capacitance value capacitor to deliver GHx pulses