SLVSE39B November   2017  – July 2018 DRV8304

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 3-Phase Smart Gate Drivers
        1. 7.3.1.1 PWM Control Modes
          1. 7.3.1.1.1 6x PWM Mode (PWM_MODE = 00b or MODE Pin Tied to AGND)
          2. 7.3.1.1.2 3x PWM Mode (PWM_MODE = 01b or MODE Pin = 47 kΩ to AGND)
          3. 7.3.1.1.3 1x PWM Mode (PWM_MODE = 10b or MODE Pin = Hi-Z)
          4. 7.3.1.1.4 Independent PWM Mode (PWM_MODE = 11b or MODE Pin Tied to DVDD)
        2. 7.3.1.2 Device Interface Modes
          1. 7.3.1.2.1 Serial Peripheral Interface (SPI)
          2. 7.3.1.2.2 Hardware Interface
        3. 7.3.1.3 Gate Driver Voltage Supplies
        4. 7.3.1.4 Smart Gate-Drive Architecture
          1. 7.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 7.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 7.3.1.4.3 Gate Drive Clamp
          4. 7.3.1.4.4 Propagation Delay
          5. 7.3.1.4.5 MOSFET VDS Monitors
          6. 7.3.1.4.6 VDRAIN Sense Pin
      2. 7.3.2 DVDD Linear Voltage Regulator
      3. 7.3.3 Pin Diagrams
      4. 7.3.4 Low-Side Current-Shunt Amplifiers
        1. 7.3.4.1 Bidirectional Current Sense Operation
        2. 7.3.4.2 Unidirectional Current Sense Operation (SPI only)
        3. 7.3.4.3 Offset Calibration
      5. 7.3.5 Gate-Driver Protection Circuits
        1. 7.3.5.1 VM Supply Undervoltage Lockout (UVLO)
        2. 7.3.5.2 VCP Charge-Pump Undervoltage Lockout (CPUV)
        3. 7.3.5.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
          1. 7.3.5.3.1 VDS Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.5.3.2 VDS Automatic Retry (OCP_MODE = 01b)
          3. 7.3.5.3.3 VDS Report Only (OCP_MODE = 10b)
          4. 7.3.5.3.4 VDS Disabled (OCP_MODE = 11b)
        4. 7.3.5.4 VSENSE Overcurrent Protection (SEN_OCP)
          1. 7.3.5.4.1 VSENSE Latched Shutdown (OCP_MODE = 00b)
          2. 7.3.5.4.2 VSENSE Automatic Retry (OCP_MODE = 01b)
          3. 7.3.5.4.3 VSENSE Report Only (OCP_MODE = 10b)
          4. 7.3.5.4.4 VSENSE Disabled (OCP_MODE = 11b or DIS_SEN = 1b)
        5. 7.3.5.5 Gate Driver Fault (GDF)
        6. 7.3.5.6 Thermal Warning (OTW)
        7. 7.3.5.7 Thermal Shutdown (OTSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Gate Driver Functional Modes
        1. 7.4.1.1 Sleep Mode
        2. 7.4.1.2 Operating Mode
        3. 7.4.1.3 Fault Reset (CLR_FLT or ENABLE Reset Pulse)
    5. 7.5 Programming
      1. 7.5.1 SPI Communication
        1. 7.5.1.1 SPI
          1. 7.5.1.1.1 SPI Format
    6. 7.6 Register Maps
      1. Table 1. DRV8304S Register Map
      2. 7.6.1    Status Registers (DRV8304S Only)
        1. 7.6.1.1 Fault Status Register 1 (Address = 0x00) [reset = 0x00]
          1. Table 11. Fault Status Register 1 Field Descriptions
        2. 7.6.1.2 Fault Status Register 2 (Address = 0x01) [reset = 0x00]
          1. Table 12. Fault Status Register 2 Field Descriptions
      3. 7.6.2    Control Registers (DRV8304S Only)
        1. 7.6.2.1 Driver Control Register (Address = 0x02) [reset = 0x00]
          1. Table 14. Driver Control Field Descriptions
        2. 7.6.2.2 Gate Drive HS Register (Address = 0x03) [reset = 0x377]
          1. Table 15. Gate Drive HS Field Descriptions
        3. 7.6.2.3 Gate Drive LS Register (Address = 0x04) [reset = 0x777]
          1. Table 16. Gate Drive LS Register Field Descriptions
        4. 7.6.2.4 OCP Control Register (Address = 0x05) [reset = 0x145]
          1. Table 17. OCP Control Field Descriptions
        5. 7.6.2.5 CSA Control Register (Address = 0x06) [reset = 0x283]
          1. Table 18. CSA Control Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Primary Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 External MOSFET Support
            1. 8.2.1.2.1.1 Example
          2. 8.2.1.2.2 IDRIVE Configuration
            1. 8.2.1.2.2.1 Example
          3. 8.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 8.2.1.2.3.1 Example
          4. 8.2.1.2.4 Sense-Amplifier Bidirectional Configuration
            1. 8.2.1.2.4.1 Example
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Alternative Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Sense-Amplifier Unidirectional Configuration
            1. 8.2.2.2.1.1 Example
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RHA|40
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.1.3 Gate Driver Voltage Supplies

The high-side gate-drive voltage supply is created using a doubler charge pump that operates from the VM voltage supply input. The charge pump allows the gate driver to properly bias the high-side MOSFET gate with respect to the source across a wide input supply-voltage range. The charge pump is regulated to maintain a fixed output voltage of VVM + 10 V and supports an average output current of 15 mA. When VVM is less than 12 V, the charge pump operates in full doubler mode and generates VVCP = 2 × VVM – 1.5 V when unloaded. The charge pump is continuously monitored for undervoltage to prevent under-driven MOSFET conditions. The charge pump requires a X5R or X7R, 1-µF, 16-V ceramic capacitor between the VM and VCP pins to act as the storage capacitor. Additionally, a X5R or X7R, 22-nF, VM-rated ceramic capacitor is required between the CPH and CPL pins to act as the flying capacitor.

DRV8304 drv8304_charge_pump_architecture.gifFigure 19. Charge Pump Architecture

The low-side gate-drive voltage is created using a linear regulator that operates from the VM voltage supply input. The linear regulator allows the gate driver to properly bias the low-side MOSFET gate with respect to ground. The linear regulator output is fixed at 10 V and supports an output current of 15 mA.