SLVS855 Data sheet

SLVS855K July 2008 – March 2021 DRV8800 , DRV8801

PRODUCTION DATA

Package Options

Mechanical Data (Package|Pins)

PWP|16
- MPDS371C
RTY|16
- MPQF170A

Thermal pad, mechanical data (Package|Pins)

PWP|16
- PPTD153P
RTY|16
- QFND060D

Orderable Information

6.5 Electrical Characteristics

over recommended operating conditions (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
IBB	Motor supply current	f_PWM < 50 kHz		6		mA
		Charge pump on, Outputs disabled		3.2		mA
		Sleep mode			10	μA
V_IH	PHASE, ENABLE, MODE input voltage		2			V
V_IL	PHASE, ENABLE, MODE input voltage				0.8	V
V_IH	nSLEEP input voltage		2.7			V
V_IL	nSLEEP input voltage				0.8	V
I_IH	PHASE, MODE input current	V_IN = 2 V		<1.0	20	μA
I_IL	PHASE, MODE input current	V_IN = 0.8 V	–20	≤–2.0	20	μA
I_IH	ENABLE input current	V_IN = 2 V		40	100	μA
I_IL	ENABLE input current	V_IN = 0.8 V		16	40	μA
I_IH	nSLEEP input current	V_IN = 2.7 V		27	50	μA
I_IL	nSLEEP input current	V_IN = 0.8 V		<1	10	μA
V_OL	nFAULT output voltage	I_sink = 1 mA			0.4	V
VBBNFR	VBB nFAULT release	8 V < VBB < 40 V		12	13.8	V
V_IHys	Input hysteresis, except nSLEEP		100	500	800	mV
r_DS(on)	Output ON-resistance	Source driver, I_OUT = –2.8 A, T_J = 25°C		0.48		Ω
		Source driver, I_OUT = –2.8 A, T_J = 125°C		0.74	0.85
		Sink driver, I_OUT = 2.8 A, T_J = 25°C		0.35
		Sink driver, I_OUT = 2.8 A, T_J = 125°C		0.52	0.7
VTRP	RSENSE voltage trip	SENSE connected to ground through a 0.2-Ω resistor		500		mV
V_f	Body diode forward voltage	Source diode, I_f = –2.8 A			1.4	V
V_f	Body diode forward voltage	Sink diode, I_f = 2.8 A			1.4	V
t_pd	Propagation delay time	PWM, Change to source or sink ON		600		ns
t_pd	Propagation delay time	PWM, Change to source or sink OFF		100		ns
t_COD	Crossover delay			500		ns
DAGain	Differential AMP gain	Sense = 0.1 V to 0.4 V		5		V/V
PROTECTION CIRCUITRY
VUV	UVLO threshold	VBB increasing		6.5	7.5	V
I_OCP	Overcurrent threshold		3			A
t_DEG	Overcurrent deglitch time			3		µs
t_OCP	Overcurrent retry time			1.2		ms
TJW	Thermal warning temperature	Temperature increasing⁽¹⁾		160		°C
TJTSD	Thermal shutdown temperature	Temperature increasing⁽²⁾		175		°C

(1) After the device reaches the thermal warning temperature of 160°C, the device will remain in thermal warning until the device cools to 145°C. This is known as the device's thermal warning hysteresis.

(2) After the device reaches the thermal shutdown temperature of 175°C, the device will remain in thermal shutdown until the device cools to 160°C. This is known as the device's thermal shutdown hysteresis.