SNLS461A May   2013  – June 2015 DS110DF111

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Data Path Operation
        1. 7.3.1.1 Input Channel Equalization
        2. 7.3.1.2 Clock And Data Recovery
        3. 7.3.1.3 PRBS Pattern Generator
        4. 7.3.1.4 Datapath Multiplexer and Output Driver
        5. 7.3.1.5 Reference Clock
        6. 7.3.1.6 Control Pins
          1. 7.3.1.6.1 Pin Mode Limitation
        7. 7.3.1.7 Eye Opening Monitor
    4. 7.4 Device Functional Modes
      1. 7.4.1 Control Pin Mode
      2. 7.4.2 SMBus Master Mode and SMBus Slave Mode
    5. 7.5 Programming
      1. 7.5.1 SMBus Interface
        1. 7.5.1.1  Address Lines
        2. 7.5.1.2  Device Configuration in SMBus Slave Mode
        3. 7.5.1.3  Bit Fields in the Register Set
        4. 7.5.1.4  Writing to and Reading From the Control/Shared Registers
        5. 7.5.1.5  SMBus Strap Observation
        6. 7.5.1.6  Interrupt Channel Flag Bits
        7. 7.5.1.7  Control/Shared Register Reset
        8. 7.5.1.8  Device Revision and Device ID
        9. 7.5.1.9  Channel Select Register
        10. 7.5.1.10 Resetting Individual Channels of the Retimer
        11. 7.5.1.11 Rate and Subrate Setting
        12. 7.5.1.12 Overriding the CTLE Boost Setting
        13. 7.5.1.13 Overriding the Output Multiplexer
        14. 7.5.1.14 Overriding the VCO Divider Selection
        15. 7.5.1.15 Using the Internal Eye Opening Monitor
        16. 7.5.1.16 Overriding the DFE Tap Weights and Polarities
        17. 7.5.1.17 Enabling Slow Rise/Fall Time on the Output Driver
        18. 7.5.1.18 Using the PRBS Generator
        19. 7.5.1.19 Inverting the Output Polarity
        20. 7.5.1.20 Overriding the Figure of Merit Adaption
        21. 7.5.1.21 Setting the Rate and Subrate for Lock Acquisition
        22. 7.5.1.22 Setting the Adaption/Lock Mode
        23. 7.5.1.23 Initiating Adaption
        24. 7.5.1.24 Overriding the CTLE Settings used for CTLE Adaption
        25. 7.5.1.25 Setting the Output Differential Voltage
        26. 7.5.1.26 Setting the Output De-Emphasis Setting
        27. 7.5.1.27 CTLE Setting for Divide by 4 and Divide by 8 VCO Ranges
    6. 7.6 Register Maps
      1. 7.6.1 Reading to and Writing From the Channel Registers
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
        1. 8.2.3.1 SFF-8431 Testing
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Supply Voltage (VDD) –0.5 +2.75 V
Supply Voltage (VIN) –0.5 +4.0 V
LVCMOS Input/Output Voltage –0.5 +4.0 V
4-Level Input Voltage (2.5 V mode) –0.5 +2.75 V
4-Level Input Voltage (3.3 V mode) –0.5 4.0 V
SMBus Input/Output Voltage –0.5 4.0 V
CML Input Voltage –0.5 VDD + 0.5 V
CML Input Current –30 +30 mA
Storage Temperature Tstg –40 +125 °C
(1) For soldering specifications, see product folder at www.ti.com

6.2 ESD Ratings

VALUE UNIT
ESD Rating(1) HBM, STD - JESD22-A114F(2) ±2500 V
CDM, STD - JESD22-C101-D(3) ±1000 V
(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges in to the device.
(2) Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(3) Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply Voltage 2.5 V Mode 2.375 2.5 2.625 V
3.3 V Mode 3.0 3.3 3.6
Ambient Temperature –40 25 +85 °C
SMBus (SDA, SCL) 3.0 3.3 3.6 V

6.4 Thermal Information

THERMAL METRIC(1) DS110DF111 UNIT
WQFN (RTW)
24 PINS
θJA Junction-to-ambient thermal resistance 35.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 34.0 °C/W
RθJB Junction-to-board thermal resistance 13.4 °C/W
ψJT Junction-to-top characterization parameter 0.3 °C/W
ψJB Junction-to-board characterization parameter 13.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
R_baud Input baud rate Full Rate: DS110DF111 8.5 11.3 Gbps
FSDC SMBus Clock Rate Slave Mode Clock Rate 100 400 kHz
Master Mode Clock Rate 280 400 520
REFCLK Clock Rate ± 100 ppm 25.0 MHz
POWER SUPPLY CURRENT
IDD Current Consumption
(Whole Device)		 11.3 Gbps : DS110DF111 170 mA
11.3 Gbps : DS110DF111
DFE Disabled		 150 mA
Maximum Transient Supply Current Default Settings: CHA and CHB valid input signal detected
CHA and CHB acquiring LOCK		 235 300 mA
NTps Supply Noise Tolerance 50 Hz to 100 Hz 100 mVp-p
100 Hz to 10 MHz 40 mVp-p
10 MHz to 5.0 GHz 10 mVp-p
LVCMOS (LBK, READEN#, DONE#, LOCK)
VIH High level input voltage 2.5 V or 3.3 V Supply Modes 1.7 VIN V
VIL Low level input voltage 2.5 V or 3.3 V Supply Modes 0.7
VOH High level output voltage IOH = –3 mA 2.0 VIN V
VOL Low level output voltage IOL = 3 mA 0.4
IIN Input leakage current VINPUT = GND or VIN –15 +15 μA
4-LEVEL INPUTS (ENSMB, DEMA, DEMB, TX_DIS, VODA, VODB)
IIN-R Input leakage current VINPUT = GND or VIN –160 +80 μA
OPEN DRAIN (LOS/INT#)
VOL Low level output voltage IOL = 3 mA 0.4 V
SIGNAL DETECT
SDH Signal Detect:
ON Threshold Level		 Default level to assert
Signal Detect, 10.3125 Gbps		 20 mVp-p
SDL Signal Detect:
OFF Threshold Level		 Default level to de-assert
Signal Detect, 10.3125 Gbps		 15 mVp-p
CML RX INPUTS
R_Rd DC Input differential Resistance 100 Ω
RLRX-IN Input Return-Loss SDD11 10 MHz –19 dB
SDD11 2.0 GHz –14
SDD11 6.0 - 11.1 GHz –8
VRX-LAUNCH Source Transmit Signal Level 600 1600 mVp-p
CML TX OUTPUTS
T_VDIFF0 Output differential voltage Default setting, PRBS31 400 550 675 mVp-p
T_VDIFF7 Output differential voltage Maximum setting, PRBS31
Requires SMBus Control		 1000 1250 mVp-p
VOD_DE De-emphasis Level Maximum setting, VOD and DE
Requires SMBus Control
Input: 10.3125Gbps, 64T pattern		 –12 dB
T_Rd DC Output Differential Resistance 100 Ω
TR/TF Output Rise/Fall Time Full Slew Rate
20% - 80%
Input: 10.3125 Gbps, 8T Pattern		 36 ps
TRS/TFS Output Rise/Fall Time Limited Slew Rate (Reg 0x18)
20% - 80%
Input: 10.3125 Gbps, 8T Pattern		 50 ps
TSDD22 Output differential mode return loss SDD22 10 MHz - 2 GHz –19 dB
SDD22 5.5GHz –15
SDD22 11.1GHz –11
TPD Propagation Delay Retimed Data 10.3125 Gbps 350 ps
TPD-RAW Propagation Delay Raw Data 200 ps
TRANSMIT JITTER SPECS(1)
TTJ Total Jitter (1E-12) PRBS7, 10.3125 Gbps 7.5 ps
TRJ Random Jitter PRBS7, 10.3125 Gbps 0.33 ps (RMS)
TDJ Deterministic Jitter PRBS7, 10.3125 Gbps 3.6 ps
CLOCK AND DATA RECOVERY
BWPLL PLL Bandwidth –3 dB Measured at 10.3125 Gbps 5 MHz
JTOL Total jitter tolerance Jitter per SFF-8431 Appendix D.11
Combination of Dj, Pj, and Rj		 > 0.70 UI
TLOCK1 CDR Lock Time Standards Based(2) 10 - 30 ms
TEMPLOCK CDR Lock Lock Temperature Range
–40°C to 85°C operating range
 125 °C
SERIAL BUS INTERFACE CHARACTERISTICS(3)
VIL Data, Clock Input Low Voltage
(SDA / SCL)		 0.8 V
VIH Data, Clock Input High Voltage
(SDA / SCL)		 2.1 3.6 V
VHY Input Hystersis >50 mV
VOL Output Low Voltage SDA or SCL, IOL = 1.25 mA 0 0.36 V
IIN Input Current SDA or SCL, VINPUT = VIN, VDD, GND –15 +15 μA
TR SDA Rise Time, Read Operation SDA, RPU = 10K, Cb < 400 pF 430 ns
TF SDA Fall Time, Read Operation SDA, RPU = 10K, Cb < 400 pF 20 ns
TSU;DAT Setup Time, Read Operation 560 ns
THD;DAT Hold Time, Read Operation 615 ns
TSP Input Filter 50 ns
CIN Input Capacitance SDA or SCL < 5 pF
RECOMMENDED TIMING FOR THE SERIAL BUS INTERFACE
FSCL SCL Clock Frequency 400 kHz
TLOW SCL Low Period 1300 ns
THIGH SCL High Period 600 ns
THD;STA Hold Time, Start Operation 600 ns
TSU;STA Setup Time, Start Operation 600 ns
THD;DAT Data Hold Time 0 900 ns
TSU;DAT Data Set Up Time 100 ns
TSU;STO Set Up Time, Stop Condition 600 ns
TBUF Bus Free Time
Between Stop - Start		 1300 ns
TF SCL and SDA, Fall Time 300 ns
TR SCL and SDA, Rise Time 1000 ns
(1) Rj and Dj Jitter decomposition as reported by TEK DSA8200 Sampling scope using a 80E09 Electrical sampling module, 80A06 Pattern trigger, and 82A04 Phase Reference Module.
(2) The typical LOCK time can vary based on data-rate, input channel, and specific DS110DF111 settings.
(3) EEPROM interface requires 520 kHz capable (1 MHz Recommended) EEPROM device.
DS110DF111 risefall.gifFigure 1. Output Edge Rate
DS110DF111 30201603.gifFigure 2. Propagation Delay
DS110DF111 30201605.gifFigure 3. SMBus Timing Diagram

6.6 Typical Characteristics

DS110DF111 degain.gif
Test Conditions
Datarate: 10.3125 Gbps with a PRBS7 pattern
VOD Setting: 1000mV
Temperature: 25°C and VDD = 2.5V
Figure 4. De-Emphasis Gain vs. Frequency
DS110DF111 eye.png
Jitter Measurements
Rj (RMS): 315 fs Dj: 3.74 ps Tj (1E-12): 7.33 ps
Figure 5. Output Eye Diagram 10.3125 Gbps