SLVSDP5A June   2017  – August 2018 ESD122

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     USB Type C Application Example
      1.      Device Images
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  IEC 61000-4-2 ESD Protection
      2. 7.3.2  IEC 61000-4-4 EFT Protection
      3. 7.3.3  IEC 61000-4-5 Surge Protection
      4. 7.3.4  IO Capacitance
      5. 7.3.5  DC Breakdown Voltage
      6. 7.3.6  Ultra Low Leakage Current
      7. 7.3.7  Low ESD Clamping Voltage
      8. 7.3.8  Supports High Speed Interfaces
      9. 7.3.9  Industrial Temperature Range
      10. 7.3.10 Easy Flow-Through Routing Package
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 USB 3.1 Gen 2 Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Signal Range
          2. 8.2.1.2.2 Operating Frequency
        3. 8.2.1.3 Application Curves
      2. 8.2.2 HDMI 2.0 Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Signal Range
          2. 8.2.2.2.2 Operating Frequency
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 10 nA –3.6 3.6 V
VBRF Breakdown voltage, any IO pin to GND(1) IIO = 1 mA, TA = 25°C 5 7.9 V
VBRR Breakdown voltage, GND to any IO pin(1) IIO = 1 mA, TA = 25°C –7.9 –5 V
VHOLD Holding voltage(2) IIO = 1 mA 5.9 V
VCLAMP Clamping voltage IPP = 1 A, TLP, from IO to GND, TA = 25°C 6.4 V
IPP = 5 A, TLP, from IO to GND, TA = 25°C 8.4
IPP = 1 A, TLP, from GND to IO, TA = 25°C 6.4
IPP = 5 A, TLP, from GND to IO, TA = 25°C 8.4
ILEAK Leakage current, any IO to GND VIO = ±2.5 V 10 nA
RDYN Dynamic resistance IO to GND, Measured between TLP IPP of 10 A and 20 A, TA = 25°C 0.5 Ω
GND to IO, Measured between TLP IPP of 10 A and 20 A, TA = 25°C 0.5
CL Line capacitance VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C 0.2 0.27 pF
ΔCL Variation of line capacitance Difference between the capacitance of the two IO pins measured with respect to ground, VIO = 0 V, f = 1 MHz, TA = 25°C, GND = 0 V 0.01 pF
CCROSS Channel to channel capacitance Capacitance from one IO to another IO, VIO = 0 V, f = 1 MHz, TA = 25°C,
GND = 0 V		 0.1 0.14 pF
(1) VBRF and VBRR are defined as the voltage obtained at 1 mA when sweeping the voltage up, before the device latches into the snapback state.
(2) VHOLD is defined as the voltage when 1 mA is applied, after the device has successfully latched into the snapback state.