SNAS685A May   2016  – August 2016 HDC1010


  1. Features
  2. Applications
  3. Description
  4. Typical Application
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 I2C Interface Electrical Characteristics
    7. 7.7 I2C Interface Timing Requirements
    8. 7.8 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Consumption
      2. 8.3.2 Voltage Supply Monitoring
      3. 8.3.3 Heater
    4. 8.4 Device Functional Modes
    5. 8.5 Programming
      1. 8.5.1 I2C Serial Bus Address Configuration
      2. 8.5.2 I2C Interface
        1. Serial Bus Address
        2. Read and Write Operations
        3. Device Measurement Configuration
    6. 8.6 Register Map
      1. 8.6.1 Temperature Register
      2. 8.6.2 Humidity Register
      3. 8.6.3 Configuration Register
      4. 8.6.4 Serial Number Registers
      5. 8.6.5 Manufacturer ID Register
      6. 8.6.6 Device Register ID
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Do's and Don'ts
      1. 9.3.1 Soldering
      2. 9.3.2 Chemical Exposure and Sensor Protection
      3. 9.3.3 High Temperature and Humidity Exposure
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Surface Mount
      2. 11.1.2 Stencil Printing Process
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings(1)

Input Voltage VDD -0.3 6 V
SCL -0.3 6
SDA -0.3 6
DRDYn -0.3 6
ADR0 -0.3 VDD+0.3
ADR1 -0.3 VDD+0.3
Storage Temperature TSTG -65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±1000 V
Charged device model (CDM), per JEDEC specification –500 500 JESD22-C101, all pins (2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating range (unless otherwise noted)
VDD Supply Voltage 2.7 3 5.5 V
TA, Temperature Sensor Ambient Operating Temperature -40 125 °C
TA, Humidity Sensor(1) Ambient Operating Temperature -20 70 °C
TA, Humidity sensor(1) Functional Operating Temperature -20 85 °C
(1) See Figure 2

7.4 Thermal Information

RθJA Junction-to-ambient thermal resistance 98.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 0.8 °C/W
RθJB Junction-to-board thermal resistance 17.8 °C/W
ψJT Junction-to-top characterization parameter 3.7 °C/W
ψJB Junction-to-board characterization parameter 17.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics(1)

The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. TA = 30°C, VDD = 3V, and RH = 40%.
IDD Supply Current RH measurement, bit 12 of 0x02 register = 0(5) 190 220 µA
Temperature measurement, bit 12 of 0x02 register = 0(5) 160 185 µA
Sleep Mode 100 200 nA
Average @ 1 measurement/second, RH (11 bit), bit 12 of 0x02 register = 0(5)(6) 710 nA
Average @ 1 measurement/second, Temp (11 bit), bit 12 of 0x02 register = 0(5)(6) 590 nA
Average @ 1 measurement/second, RH (11bit) +temperature (11 bit), bit 12 of 0x02 register = 1(5)(6) 1.3 µA
Startup (average on Start-up time) 300 µA
IHEAT Heater Current(7) Peak current 7.2 mA
Average @ 1 measurement/second, RH (11bit) +temperature (11 bit), bit 12 of 0x02 register = 1(5)(6) 50 µA
RHACC Accuracy Refer to Figure 2 in Typical Characteristics section. ±2 %RH
RHREP Repeatability(7) 14 bit resolution. ±0.1 %RH
RHHYS Hysteresis (8) 10% ≤ RH ≤ 70% ±1 %RH
RHRT Response Time(9) t 63% (10) 15 s
RHCT Conversion Time(7) 8 bit resolution 2.50 ms
11 bit resolution 3.85 ms
14 bit resolution 6.50 ms
RHHOR Operating Range(11) Non-condensing 0 100 %RH
RHLTD Long Term Drift(12) ±0.25 %RH/yr
TEMPACC Accuracy(7) 5°C < TA< 60°C ±0.2 ±0.4 °C
TEMPREP Repeatability(7) 14 bit accuracy ±0.1 °C
TEMPCT Conversion Time(7) 11 bit accuracy 3.65 ms
14 bit accuracy 6.35 ms
TEMPOR Operating Range -40 125 °C
(1) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal values have no prefix.
(3) Limits are ensured by testing, design, or statistical analysis at 30°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.
(4) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
(5) I2C read/write communication and pull-up resistors current through SCL and SDA not included.
(6) Average current consumption while conversion is in progress.
(7) This parameter is specified by design and/or characterization and it is not tested in production.
(8) The hysteresis value is the difference between an RH measurement in a rising and falling RH environment, at a specific RH point.
(9) Actual response times will vary dependent on system thermal mass and air-flow.
(10) Time for the RH output to change by 63% of the total RH change after a step change in environmental humidity.
(11) Recommended humidity operating range is 10% to 70% RH. Prolonged operation outside this range may result in a measurement offset. The measurement offset will decrease after operating the sensor in this recommended operating range.
(12) Drift due to aging effects at typical conditions (30°C and 20% to 50% RH). This value may be impacted by dust, vaporized solvents, out-gassing tapes, adhesives, packaging materials, etc.

7.6 I2C Interface Electrical Characteristics

At TA=30°C, VDD=3V (unless otherwise noted)
VIH Input High Voltage 0.7xVDD V
VIL Input Low Voltage 0.3xVDD V
VOL Output Low Voltage Sink current 3mA 0.4 V
HYS Hysteresis (1) 0.1xVDD V
CIN Input Capacitance on all digital pins 0.5 pF
(1) This parameter is specified by design and/or characterization and it is not tested in production.

7.7 I2C Interface Timing Requirements

fSCL Clock Frequency 10 400 kHz
tLOW Clock Low Time 1.3 µs
tHIGH Clock High Time 0.6 µs
tSP Pulse width of spikes that must be suppressed by the input filter (1) 50 ns
tSTART Device Start-up time From VDD ≥ 2.7 V to ready for a conversion(1)(2) 10 15 ms
(1) This parameter is specified by design and/or characterization and it is not tested in production.
(2) Within this interval it is not possible to communicate to the device.
HDC1010 REDUCED_TIMING_FINAL.gif Figure 1. I2C Timing

7.8 Typical Characteristics

Unless otherwise noted. TA = 30°C, VDD = 3V.
HDC1010 D001_SNAS685.gif
Figure 2. RH Accuracy vs. RH
HDC1010 D022_SNAS643.gif Figure 4. Supply Current vs. Supply Voltage, RH Measurement
HDC1010 D023_SNAS643.gif Figure 6. Supply Current vs. Supply Voltage, Temp Measurement
HDC1010 D024_SNAS643.gif Figure 8. Supply Current vs. Supply Voltage, Sleep Mode
HDC1010 D028_SNAS643.gif
Figure 3. Temperature Accuracy vs. Temperature
HDC1010 D025_SNAS643.gif Figure 5. Supply Current vs. Temperature, RH Measurement
HDC1010 D026_SNAS643.gif Figure 7. Supply Current vs. Temperature, Temp Measurement
HDC1010 D027_SNAS643.gif Figure 9. Supply Current vs. Temperature, Sleep Mode