SBOS781E March   2016  – May 2021 INA199-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Zero-Drift Offset
      2. 8.3.2 Accuracy
      3. 8.3.3 Choice of Gain Options
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 Input Filtering
      3. 9.1.3 Shutting Down the INA199-Q1
      4. 9.1.4 REF Input Impedance Effects
      5. 9.1.5 Using the INA199-Q1 With Common-Mode Transients Above 26 V
    2. 9.2 Typical Applications
      1. 9.2.1 Unidirectional Operation
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Bidirectional Operation
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.5 Electrical Characteristics

at TA = 25°C, VS = 5 V, VIN+ = 12 V, VSENSE = VIN+ – VIN–, and VREF = VS / 2 (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
INPUT
VCMCommon-mode input voltageTA = –40°C to +125°C–0.126V
CMRCommon-mode rejectionVIN+ = 0 V to 26 V, VSENSE = 0 mV,
TA = –40°C to +125°C		100120dB
VOSOffset voltage, RTI(1)VSENSE = 0 mV±5±150μV
dVOS/dTVOS vs. temperatureTA = –40°C to +125°C0.10.5μV/°C
PSRPower-supply rejectionVS = 2.7 V to 18 V,
VIN+ = 18 V, VSENSE = 0 mV		±0.1μV/V
IBInput bias currentVSENSE = 0 mV28μA
IOSInput offset currentVSENSE = 0 mV±0.02μA
OUTPUT
GGainINA199x1-Q150V/V
INA199x2-Q1100
INA199x3-Q1200
Gain errorVSENSE = –5 mV to 5 mV,
TA = –40°C to +125°C		B version±0.03%±1.5%
C version±0.03%±1%
Gain error vs. temperatureTA = –40°C to +125°C310ppm/°C
Nonlinearity errorVSENSE = –5 mV to +5 mV±0.01%
Maximum capacitive loadNo sustained oscillation1nF
VOLTAGE OUTPUT(2)
Swing to V+ power-supply railRL = 10 kΩ to GND,
TA = –40°C to +125°C		(V+) – 0.05(V+) – 0.2V
Swing to GNDRL = 10 kΩ to GND,
TA = –40°C to +125°C		(VGND) + 0.005(VGND) + 0.05V
FREQUENCY RESPONSE
GBWBandwidthCLOAD = 10 pFINA199x1-Q180kHz
INA199x2-Q130
INA199x3-Q114
SRSlew rate0.4V/µs
NOISE, RTI(1)
Voltage noise density25nV/√ Hz
POWER SUPPLY
IQQuiescent currentVSENSE = 0 mV65100µA
IQ over temperatureTA = –40°C to +125°C115µA
(1) RTI = referred-to-input.
(2) See typical characteristic curve, Output Voltage Swing vs. Output Current (Figure 7-6).