SBOS485C November 2009 – May 2015 INA282 , INA283 , INA284 , INA285 , INA286
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage, V+ | 18 | V | ||
| Analog inputs, V+IN, V–IN(2) | Differential (V+IN) – (V–IN)(3) | –5 | +5 | V |
| Common-mode | –14 | +80 | V | |
| REF1, REF2, OUT | GND – 0.3 | (V+) + 0.3 | V | |
| Input current into any pin | 5 | mA | ||
| Junction temperature | 150 | °C | ||
| Storage temperature range, Tstg | –65 | +150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VCM | Common-mode input voltage | 12 | V | ||
| V+ | Operating supply voltage | 5 | V | ||
| TA | Operating free-air temperature | –40 | +125 | °C | |
| THERMAL METRIC(1) | INA28x | UNIT | ||
|---|---|---|---|---|
| D (SOIC) | DGK (VSSOP) | |||
| 8 PINS | 8 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 134.9 | 164.1 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 72.9 | 56.4 | °C/W |
| RθJB | Junction-to-board thermal resistance | 61.3 | 85.0 | °C/W |
| ψJT | Junction-to-top characterization parameter | 18.9 | 6.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 54.3 | 83.3 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | n/a | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| INPUT | |||||||
| VOS | Offset voltage, RTI(1) | VSENSE = 0 mV | ±20 | ±70 | µV | ||
| dVOS/dT | vs temperature | VSENSE = 0 mV, TA = –40°C to +125°C |
±0.3 | ±1.5 | µV/°C | ||
| PSRR | vs power supply | V+ = +2.7 V to +18 V, VSENSE = 0 mV |
3 | μV/V | |||
| VCM | Common-mode input range | TA = –40°C to +125°C | –14 | +80 | V | ||
| CMRR | Common-mode rejection ratio | V+IN = –14 V to +80 V, VSENSE = 0 mV, TA = –40°C to +125°C |
120 | 140 | dB | ||
| IB | Input bias current per pin(2) | VSENSE = 0 mV | 25 | µA | |||
| IOS | Input offset current | VSENSE = 0 mV | 1 | µA | |||
| Differential input impedance | 6 | kΩ | |||||
| REFERENCE INPUTS | |||||||
| Reference input gain | 1 | V/V | |||||
| Reference input voltage range(3) | 0 | VGND + 9 | V | ||||
| Divider accuracy(4) | ±0.2% | ±0.5% | |||||
| RVRR | Reference voltage rejection ratio (VREF1 = VREF2 = 40 mV to 9 V, V+ = 18 V) |
INA282 | ±25 | ±75 | µV/V | ||
| TA = –40°C to +125°C | 0.055 | µV/V/°C | |||||
| INA283 | ±13 | ±30 | µV/V | ||||
| TA = –40°C to +125°C | 0.040 | µV/V/°C | |||||
| INA284 | ±6 | ±25 | µV/V | ||||
| TA = –40°C to +125°C | 0.015 | µV/V/°C | |||||
| INA285 | ±4 | ±10 | µV/V | ||||
| TA = –40°C to +125°C | 0.010 | µV/V/°C | |||||
| INA286 | ±17 | ±45 | µV/V | ||||
| TA = –40°C to +125°C | 0.040 | µV/V/°C | |||||
| GAIN(5) (GND + 0.5 V ≤ VOUT ≤ (V+) – 0.5 V; VREF1 = VREF2 = (V+) / 2 for all devices) | |||||||
| G | Gain | INA282, V+ = 5 V | 50 | V/V | |||
| INA283, V+ = 5 V | 200 | V/V | |||||
| INA284, V+ = 12 V | 500 | V/V | |||||
| INA285, V+ = 12 V | 1000 | V/V | |||||
| INA286, V+ = 5 V | 100 | V/V | |||||
| Gain error | INA282, INA283, INA286 | ±0.4% | ±1.4% | ||||
| INA284, INA285 | ±0.4% | ±1.6% | |||||
| TA = –40°C to +125°C | 0.0008 | 0.005 | %/°C | ||||
| OUTPUT | |||||||
| Nonlinearity error | ±0.01% | ||||||
| Output impedance | 1.5 | Ω | |||||
| Maximum capacitive load | No sustained oscillation | 1 | nF | ||||
| VOLTAGE OUTPUT(6) | |||||||
| Swing to V+ power-supply rail | V+ = 5 V, RLOAD = 10 kΩ to GND, TA = –40°C to +125°C |
(V+) – 0.17 | (V+) – 0.4 | V | |||
| Swing to GND | RLOAD = 10 kΩ to GND, TA = –40°C to +125°C |
GND + 0.015 | GND + 0.04 | V | |||
| FREQUENCY RESPONSE | |||||||
| BW | Effective bandwidth(7) | INA282 | 10 | kHz | |||
| INA283 | 10 | kHz | |||||
| INA284 | 4 | kHz | |||||
| INA285 | 2 | kHz | |||||
| INA286 | 10 | kHz | |||||
| NOISE, RTI(1) | |||||||
| Voltage noise density | 1 kHz | 110 | nV/√Hz | ||||
| POWER SUPPLY | |||||||
| VS | Specified voltage range | TA = –40°C to +125°C | 2.7 | 18 | V | ||
| IQ | Quiescent current | 600 | 900 | µA | |||




























