SLOS414J May   2003  – February 2021 LM2904-Q1 , LM2904B-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: LM2904B-Q1
    6. 7.6 Electrical Characteristics: LM2904-Q1, LM2904AV-Q1, LM2904V-Q1
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Unity-Gain Bandwidth
      2. 9.3.2 Slew Rate
      3. 9.3.3 Input Common Mode Range
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Support Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DGK|8
  • PW|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics: LM2904B-Q1

V= (V+) – (V–) = 5 V – 36 V (±2.5 V – ±18 V), T= 25°C, VCM = VOUT = V/ 2, R= 10k connected to V/ 2
(unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OFFSET VOLTAGE
VOSInput offset voltageLM2904B-Q1±0.3±3.0mV
TA = –40°C to +125°C±4
dVOS/dTInput offset voltage driftTA = –40°C to +125°C(1)±3.512µV/°C
PSRRPower supply rejection ratio±215µV/V
Channel separation, dcf = 1 kHz to 20 kHz±1µV/V
INPUT VOLTAGE RANGE
VCMCommon-mode voltage rangeVS = 3 V to 36 V(V–)(V+) – 1.5V
VS = 5 V to 36 VTA = –40°C to +125°C(V–)(V+) – 2
CMRRCommon-mode rejection ratio(V–) ≤ VCM ≤ (V+) – 1.5 VVS = 3 V to 36 V20100µV/V
(V–) ≤ VCM ≤ (V+) – 2.0 VVS = 5 V to 36 VTA = –40°C to +125°C25316
INPUT BIAS CURRENT
IBInput bias current±10±35nA
TA = –40°C to +125°C(1)±50
IOSInput offset current0.54nA
TA = –40°C to +125°C(1)5
dIOS/dTInput offset current driftTA = –40°C to +125°C10pA/℃
NOISE
EnInput voltage noisef = 0.1 to 10 Hz3µVPP
enInput voltage noise densityf = 1 kHz40nV/√/Hz
INPUT IMPEDANCE
ZIDDifferential10 || 0.1MΩ || pF
ZICCommon-mode4 || 1.5GΩ || pF
OPEN-LOOP GAIN
AOLOpen-loop voltage gainVS = 15 V; VO = 1 V to 11 V; RL ≥ 10 kΩ, connected to (V–)70140V/mV
TA = –40°C to +125°C35
FREQUENCY RESPONSE
GBWGain bandwidth product1.2MHz
SRSlew rateG = +10.5V/µs
ΘmPhase marginG = +1, RL = 10 kΩ, CL = 20 pF56°
tOROverload recovery timeVIN × gain > VS10µs
tsSettling timeTo 0.1%, VS = 5 V, 2-V step , G = +1, CL = 100 pF4µs
THD+NTotal harmonic distortion + noiseG = +1, f = 1 kHz, VO = 3.53 VRMS, VS = 36 V, RL = 100k, IOUT ≤ ±50 µA, BW = 80 kHz0.001%
OUTPUT
VOVoltage output swing from railPositive rail (V+)IOUT = 50 µA1.351.42V
IOUT = 1 mA1.41.48
IOUT = 5 mA(1)1.51.61
Negative rail (V–)IOUT = 50 µA100150mV
IOUT = 1 mA0.751V
VS = 5 V, RL ≤ 10 kΩ connected to (V–)TA = –40°C to +125°C520mV
IOOutput currentVS = 15 V; VO = V–;
VID = 1 V
Source(1)–20–30mA
TA = –40°C to +125°C–10
VS = 15 V; VO = V+;
VID = –1 V
Sink(1)1020
TA = –40°C to +125°C5
VID = –1 V; VO = (V–) + 200 mV60100μA
ISCShort-circuit currentVS = 20 V, (V+) = 10 V, (V–) = –10 V, VO = 0 V±40±60mA
CLOADCapacitive load drive100pF
ROOpen-loop output resistancef = 1 MHz, IO = 0 A300Ω
POWER SUPPLY
IQQuiescent current per amplifierVS = 5 V; IO = 0 ATA = –40°C to +125°C300460µA
VS = 36 V; IO = 0 A800
Specified by characterization only.