SNVSBM6A Data sheet

SNVSBM6A April 2020 – January 2021 LM5181

PRODUCTION DATA

Package Options

Mechanical Data (Package|Pins)

NGU|8
- MPDS407A

Thermal pad, mechanical data (Package|Pins)

Orderable Information

7.5 Electrical Characteristics

Typical values correspond to T_J = 25°C. Minimum and maximum limits aaply over the full –40°C to 150°C junction temperature range unless otherwise indicated. V_IN = 24 V and V_EN/UVLO = 2 V unless otherwise stated.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_SHUTDOWN	VIN shutdown current	V_EN/UVLO = 0 V		3		µA
I_ACTIVE	VIN active current	V_EN/UVLO = 2.5 V, V_RSET = 1.8 V		260	350	µA
I_ACTIVE-BIAS	VIN current with BIAS connected	V_SS/BIAS = 6 V		25	40	µA
V_SD-FALLING	Shutdown threshold	V_EN/UVLO falling	0.3			V
ENABLE AND INPUT UVLO
V_SD-RISING	Standby threshold	V_EN/UVLO rising		0.8	1	V
V_UV-RISING	Enable threshold	V_EN/UVLO rising	1.45	1.5	1.53	V
V_UV-HYST	Enable voltage hysteresis	V_EN/UVLO falling	0.04	0.05		V
I_UV-HYST	Enable current hysteresis	V_EN/UVLO = 1.6 V	4.2	5	5.5	µA
FEEDBACK
I_RSET	RSET current	R_RSET = 12.1 kΩ		100		µA
V_RSET	RSET regulation voltage	R_RSET = 12.1 kΩ	1.191	1.21	1.224	V
V_FB-VIN1	FB to VIN voltage	I_FB = 80 µA	–40			mV
V_FB-VIN2	FB to VIN voltage	I_FB = 120 µA			40	mV
SWITCHING FREQUENCY
F_SW-MIN	Minimum switching frequency			12		kHz
F_SW-MAX	Maximum switching frequency			350		kHz
t_ON-MIN	Minimum switch on-time			140		ns
DIODE THERMAL COMPENSATION
V_TC	TC voltage	I_TC = ±10 µA, T_J = 25°C		1.2	1.27	V
POWER SWITCHES
R_DS(on)	MOSFET on-state resistance	I_SW = 100 mA		0.4		Ω
SOFT-START AND BIAS
I_SS	SS ext capacitor charging current			5		µA
t_SS	Internal SS time			6		ms
V_{BIAS-UVLO-RISE}	BIAS enable voltage	V_SS/BIAS rising		5.5	5.75	V
V_{BIAS-UVLO-HYST}	BIAS UVLO hysteresis	V_SS/BIAS falling		190		mV
CURRENT LIMIT
I_SW-PEAK	Peak current limit threshold		0.62	0.75	0.88	A
THERMAL SHUTDOWN
T_SD	Thermal shutdown threshold	T_J rising		175		°C
T_SD-HYS	Thermal shutdown hysteresis			6		°C