SNOS745D May   1998  – November 2023 LM6171

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: ±15 V
    6. 5.6 Electrical Characteristics: ±5 V
    7. 5.7 Typical Characteristics: LM6171A Only
    8. 5.8 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Circuit Operation
      2. 6.3.2 Slew Rate
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Compensation for Input Capacitance
      2. 7.1.2 Power Supply Bypassing
      3. 7.1.3 Termination
      4. 7.1.4 Driving Capacitive Loads
      5. 7.1.5 Using Probes
      6. 7.1.6 Components Selection and Feedback Resistor
    2. 7.2 Typical Applications
      1. 7.2.1 Fast Instrumentation Amplifier
      2. 7.2.2 Multivibrator
      3. 7.2.3 Pulse Width Modulator
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Power Dissipation
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Printed Circuit Boards and High-Speed Op Amps
  9. Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.