SNOSAW8E May   2008  – September 2015 LM7321 , LM7322

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description continued
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 2.7-V Electrical Characteristics
    6. 7.6 ±5-V Electrical Characteristics
    7. 7.7 ±15-V Electrical Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Output Short Circuit Current and Dissipation Issues
      2. 8.3.2 Estimating the Output Voltage Swing
    4. 8.4 Device Functional Modes
      1. 8.4.1 Driving Capacitive Loads
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Similar High-Output Devices
      2. 9.1.2 Other High Performance SOT-23 Ampliers
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(4)
MIN MAX UNIT
VIN Differential ±10 V
Output Short Circuit Current See (2)
Supply Voltage (VS = V+ - V−) 35 V
Voltage at Input/Output pins V+ + 0.8 V− − 0.8 V
Junction Temperature(3) 150 °C
Soldering Information:    Infrared or Convection (20 sec.) 235 °C
Wave Soldering (10 sec.) 260 °C
Storage Temperature −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
(3) The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX)) – TA)/ RθJA. All numbers apply for packages soldered directly onto a PCB.
(4) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge(3) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine Model 200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

7.3 Recommended Operating Conditions

MIN MAX UNIT
Supply Voltage (VS = V+ - V−) 2.5 32 V
Temperature Range(1) −40 125 °C
(1) The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX)) – TA)/ RθJA. All numbers apply for packages soldered directly onto a PCB.

7.4 Thermal Information

THERMAL METRIC(2) LM7321 UNIT
D (SOIC) DBV (SOT) DGK (VSSOP)
8 PINS 5 PINS 8 PINS
RθJA(1)      Junction-to-ambient thermal resistance 165 325 235 °C/W
(1) The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX)) – TA)/ RθJA. All numbers apply for packages soldered directly onto a PCB.
(2) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 2.7-V Electrical Characteristics

Unless otherwise specified, all limits ensured for TA = 25°C, V+ = 2.7 V, V− = 0 V, VCM = 0.5 V, VOUT = 1.35 V, and RL > 1 MΩ to 1.35 V.(1)
PARAMETER TEST CONDITION MIN(3) TYP(2) MAX(3) UNIT
VOS Input Offset Voltage VCM = 0.5 V and VCM = 2.2 V −5 ±0.7 +5 mV
TA = –40°C to +125°C −6 +6
TC VOS Input Offset Voltage Temperature Drift VCM = 0.5 V and VCM = 2.2 V(4) ±2 µV/C
IB Input Bias Current VCM = 0.5 V(5) −2 −1.2 µA
TA = –40°C to +125°C −2.5
VCM = 2.2 V(5) 0.45 1
TA = –40°C to +125°C 1.5
IOS Input Offset Current VCM = 0.5 V and VCM = 2.2 V 20 200 nA
TA = –40°C to +125°C 300
CMRR Common-Mode Rejection Ratio 0 V ≤ VCM ≤ 1 V 70 100 dB
TA = –40°C to +125°C 60
0 V ≤ VCM ≤ 2.7 V 55 70
TA = –40°C to +125°C 50
PSRR Power Supply Rejection Ratio 2.7 V ≤ VS ≤ 30 V 78 104 dB
TA = –40°C to +125°C 74
CMVR Common-Mode Voltage Range (Min) CMRR > 50 dB −0.3 −0.1 V
TA = –40°C to +125°C 0
Common-Mode Voltage Range (Max) CMRR > 50 dB 2.8 3
TA = –40°C to +125°C 2.7
AVOL Open-Loop Voltage Gain 0.5 V ≤ VO ≤ 2.2 V
RL = 10 kΩ to 1.35 V		 65 72 dB
TA = –40°C to +125°C 62
0.5 V ≤ VO ≤ 2.2 V
RL = 2 kΩ to 1.35V		 59 66
TA = –40°C to +125°C 55
VOUT Output Voltage Swing
High		 RL = 10 kΩ to 1.35 V
VID = 100 mV		 50 150 mV from either rail
TA = –40°C to +125°C 160
RL = 2 kΩ to 1.35 V
VID = 100 mV		 100 250
TA = –40°C to +125°C 280
Output Voltage Swing
Low		 RL = 10 kΩ to 1.35 V
VID = −100 mV 		20 120
TA = –40°C to +125°C 150
RL = 2 kΩ to 1.35 V
VID = −100 mV 		40 120
TA = –40°C to +125°C 150
IOUT Output Current Sourcing
VID = 200 mV, VOUT = 0 V(7)		 30 48 mA
TA = –40°C to +125°C 20
Sinking
VID = −200 mV, VOUT = 2.7 V(7)		 40 65
TA = –40°C to +125°C 30
IS Supply Current LM7321 0.95 1.3 mA
TA = –40°C to +125°C 1.9
LM7322 2 2.5
TA = –40°C to +125°C 3.8
SR Slew Rate(6) AV = +1, VI = 2-V Step 8.5 V/µs
fu Unity Gain Frequency RL = 2 kΩ, CL = 20 pF 7.5 MHz
GBW Gain Bandwidth f = 50 kHz 16 MHz
en Input Referred Voltage Noise Density f = 2 kHz 11.9 nV/√H
in Input Referred Current Noise Density f = 2 kHz 0.5 pA/√H
THD+N Total Harmonic Distortion + Noise V+ = 1.9 V, V− = −0.8 V
f = 1 kHz, RL = 100 kΩ, AV = +2
VOUT = 210 mVPP		 −77 dB
CT Rej. Crosstalk Rejection f = 100 kHz, Driver RL = 10 kΩ 60 dB
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(3) All limits are ensured by testing or statistical analysis.
(4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
(7) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.

7.6 ±5-V Electrical Characteristics

Unless otherwise specified, all limited ensured for TA = 25°C, V+ = 5 V, V− = −5V, VCM = 0 V, VOUT = 0 V, and RL > 1 MΩ to 0 V.(1)
PARAMETER TEST CONDITION MIN(3) TYP(2) MAX(3) UNIT
VOS Input Offset Voltage VCM = −4.5 V and VCM = 4.5 V −5 ±0.7 +5 mV
TA = –40°C to +125°C −6 +6
TC VOS Input Offset Voltage Temperature Drift VCM = −4.5 V and VCM = 4.5 V(4) ±2 µV/°C
IB Input Bias Current VCM = −4.5 V(5) −2.0 −1.2 µA
TA = –40°C to +125°C −2.5
VCM = 4.5 V(5) 0.45 1
TA = –40°C to +125°C 1.5
IOS Input Offset Current VCM = −4.5 V and VCM = 4.5 V 20 200 nA
TA = –40°C to +125°C 300
CMRR Common Mode Rejection Ratio −5 V ≤ VCM ≤ 3 V 80 100 dB
TA = –40°C to +125°C 70
−5 V ≤ VCM ≤ 5 V 65 80
TA = –40°C to +125°C 62
PSRR Power Supply Rejection Ratio 2.7 V ≤ VS ≤ 30 V,
VCM = −4.5 V		 78 104 dB
TA = –40°C to +125°C 74
CMVR Common-Mode Voltage Range (Min) CMRR > 50 dB −5.3 −5.1 V
TA = –40°C to +125°C −5
Common-Mode Voltage Range (Max) CMRR > 50 dB 5.1 5.3
TA = –40°C to +125°C 5
AVOL Open-Loop Voltage Gain −4 V ≤ VO ≤ 4 V
RL = 10 kΩ to 0 V		 74 80 dB
TA = –40°C to +125°C 70
−4 V ≤ VO ≤ 4 V
RL = 2 kΩ to 0 V		 68 74
TA = –40°C to +125°C 65
VOUT Output Voltage Swing
High		 RL = 10 kΩ to 0 V
VID = 100 mV		 100 250 mV from either rail
TA = –40°C to +125°C 280
RL = 2 kΩ to 0 V
VID = 100 mV		 160 350
TA = –40°C to +125°C 450
Output Voltage Swing
Low		 RL = 10 kΩ to 0 V
VID = −100 mV		 35 200
TA = –40°C to +125°C 250
RL = 2 kΩ to 0 V
VID = −100 mV		 80 200
TA = –40°C to +125°C 250
IOUT Output Current Sourcing
VID = 200 mV, VOUT = −5 V(7)		 35 70 mA
TA = –40°C to +125°C 20
Sinking
VID = −200 mV, VOUT = 5 V(7)		 50 85
TA = –40°C to +125°C 30
IS Supply Current VCM = −4.5 V LM7321 1.0 1.3 mA
TA = –40°C to +125°C 2
LM7322 2.3 2.8
TA = –40°C to +125°C 3.8
SR Slew Rate(6) AV = +1, VI = 8-V Step 12.3 V/µs
fu Unity Gain Frequency RL = 2 kΩ, CL = 20 pF 9 MHz
GBW Gain Bandwidth f = 50 kHz 16 MHz
en Input Referred Voltage Noise Density f = 2 kHz 14.3 nV/√H
in Input Referred Current Noise Density f = 2 kHz 1.35 pA/√H
THD+N Total Harmonic Distortion + Noise f = 1 kHz, RL = 100 kΩ, AV = +2
VOUT = 8 VPP		 −79 dB
CT Rej. Crosstalk Rejection f = 100 kHz, Driver RL = 10 kΩ 60 dB
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(3) All limits are ensured by testing or statistical analysis.
(4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
(7) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.

7.7 ±15-V Electrical Characteristics

Unless otherwise specified, all limited ensured for TA = 25°C, V+ = 15 V, V− = −15 V, VCM = 0 V, VOUT = 0 V, and RL > 1 MΩ to 15 V.(1)
PARAMETER TEST CONDITION MIN(3) TYP(2) MAX(3) UNIT
VOS Input Offset Voltage VCM = −14.5 V and VCM = 14.5 V −6 ±0.7 +6 mV
–40°C to +125°C −8 +8
TC VOS Input Offset Voltage Temperature Drift VCM = −14.5 V and VCM = 14.5 V(4) ±2 µV/°C
IB Input Bias Current VCM = −14.5 V(5) −2 −1.1 µA
–40°C to +125°C −2.5
VCM = 14.5 V(5) 0.45 1
–40°C to +125°C 1.5
IOS Input Offset Current VCM = −14.5 V and VCM = 14.5 V 30 300 nA
–40°C to +125°C 500
CMRR Common-Mode Rejection Ratio −15 V ≤ VCM ≤ 12 V 80 100 dB
–40°C to +125°C 75
−15 V ≤ VCM ≤ 15 V 72 80
–40°C to +125°C 70
PSRR Power Supply Rejection Ratio 2.7 V ≤ VS ≤ 30 V, VCM = −14.5 V 78 100 dB
–40°C to +125°C 74
CMVR Common-Mode Voltage Range (Min) CMRR > 50 dB −15.3 −15.1 V
–40°C to +125°C −15
Common-Mode Voltage Range (Max) CMRR > 50 dB 15.1 15.3
–40°C to +125°C 15
AVOL Open-Loop Voltage Gain −13 V ≤ VO ≤ 13 V
RL = 10 kΩ to 0 V		 75 85 dB
–40°C to +125°C 70
−13 V ≤ VO ≤ 13 V
RL = 2 kΩ to 0 V		 70 78
–40°C to +125°C 65
VOUT Output Voltage Swing
High		 RL = 10 kΩ to 0 V
VID = 100 mV		 150 300 mV from either rail
–40°C to +125°C 350
RL = 2 kΩ to 0 V
VID = 100 mV		 250 550
–40°C to +125°C 650
Output Voltage Swing
Low		 RL = 10 kΩ to 0 V
VID = −100 mV		 60 200
–40°C to +125°C 250
RL = 2 kΩ to 0 V
VID = −100 mV		 130 300
–40°C to +125°C 400
IOUT Output Current Sourcing
VID = 200 mV, VOUT = −15 V(7)		 40 65 mA
Sinking
VID = −200 mV, VOUT = 15 V(7)		 60 100
IS Supply Current VCM = −14.5 V LM7321 1.1 1.7 mA
–40°C to +125°C 2.4
LM7322 2.5 4
–40°C to +125°C 5.6
SR Slew Rate(6) AV = +1, VI = 20-V Step 18 V/µs
fu Unity Gain Frequency RL = 2 kΩ, CL = 20 pF 11.3 MHz
GBW Gain Bandwidth f = 50 kHz 20 MHz
en Input Referred Voltage Noise Density f = 2 kHz 15 nV/√H
in Input Referred Current Noise Density f = 2 kHz 1.3 pA/√H
THD+N Total Harmonic Distortion +Noise f = 1 kHz, RL 100 kΩ,
AV = +2, VOUT = 23 VPP		 −86 dB
CT Rej. Crosstalk Rejection f = 100 kHz, Driver RL = 10 kΩ 60 dB
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(3) All limits are ensured by testing or statistical analysis.
(4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Slew rate is the slower of the rising and falling slew rates. Connected as a Voltage Follower.
(7) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Short circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.

7.8 Typical Characteristics

Unless otherwise specified: TA = 25°C.
LM7321 LM7322 20205734.gif Figure 1. Output Swing vs. Sourcing Current
LM7321 LM7322 20205735.gif Figure 3. Output Swing vs. Sourcing Current
LM7321 LM7322 20205736.gif Figure 5. Output Swing vs. Sourcing Current
LM7321 LM7322 20205730.gif Figure 7. VOS Distribution
LM7321 LM7322 20205708.gif Figure 9. VOS vs. VCM (Unit 2)
LM7321 LM7322 20205710.gif Figure 11. VOS vs. VCM (Unit 1)
LM7321 LM7322 20205712.gif Figure 13. VOS vs. VCM (Unit 2)
LM7321 LM7322 20205714.gif Figure 15. VOS vs. VCM (Unit 2)
LM7321 LM7322 20205750.gif Figure 17. VOS vs. VS (Unit 1)
LM7321 LM7322 20205752.gif Figure 19. VOS vs. VS (Unit 3)
LM7321 LM7322 20205754.gif Figure 21. VOS vs. VS (Unit 2)
LM7321 LM7322 20205723.gif Figure 23. IBIAS vs. VCM
LM7321 LM7322 20205725.gif Figure 25. IBIAS vs. VCM
LM7321 LM7322 20205721.gif Figure 27. IBIAS vs. VS
LM7321 LM7322 20205775.gif Figure 29. IS vs. VCM (LM7322)
LM7321 LM7322 20205776.gif Figure 31. IS vs. VCM (LM7322)
LM7321 LM7322 20205777.gif Figure 33. IS vs. VCM (LM7322)
LM7321 LM7322 20205779.gif Figure 35. IS vs. VS (LM7322)
LM7321 LM7322 20205778.gif Figure 37. IS vs. VS (LM7322)
LM7321 LM7322 20205726.gif Figure 39. Positive Output Swing vs. Supply Voltage
LM7321 LM7322 20205729.gif
Figure 41. Negative Output Swing vs. Supply Voltage
LM7321 LM7322 20205783.gif Figure 43. Open-Loop Frequency Response with Various Resistive Load
LM7321 LM7322 20205738.gif Figure 45. Phase Margin vs. Capacitive Load
LM7321 LM7322 20205740.gif Figure 47. +PSRR vs. Frequency
LM7321 LM7322 20205737.gif Figure 49. Small Signal Step Response
LM7321 LM7322 20205742.gif Figure 51. Input Referred Noise Density vs. Frequency
LM7321 LM7322 20205744.gif Figure 53. Input Referred Noise Density vs. Frequency
LM7321 LM7322 20205746.gif Figure 55. THD+N vs. Output Amplitude
LM7321 LM7322 20205748.gif Figure 57. THD+N vs. Output Amplitude
LM7321 LM7322 20205731.gif Figure 2. Output Swing vs. Sinking Current
LM7321 LM7322 20205732.gif Figure 4. Output Swing vs. Sinking Current
LM7321 LM7322 20205733.gif Figure 6. Output Swing vs. Sinking Current
LM7321 LM7322 20205707.gif Figure 8. VOS vs. VCM (Unit 1)
LM7321 LM7322 20205709.gif Figure 10. VOS vs. VCM (Unit 3)
LM7321 LM7322 20205711.gif Figure 12. VOS vs. VCM (Unit 2)
LM7321 LM7322 20205713.gif Figure 14. VOS vs. VCM (Unit 1)
LM7321 LM7322 20205715.gif Figure 16. VOS vs. VCM (Unit 3)
LM7321 LM7322 20205751.gif Figure 18. VOS vs. VS (Unit 2)
LM7321 LM7322 20205753.gif Figure 20. VOS vs. VS (Unit 1)
LM7321 LM7322 20205755.gif Figure 22. VOS vs. VS (Unit 3)
LM7321 LM7322 20205724.gif Figure 24. IBIAS vs. VCM
LM7321 LM7322 20205722.gif Figure 26. IBIAS vs. VS
LM7321 LM7322 20205718.gif Figure 28. IS vs. VCM (LM7321)
LM7321 LM7322 20205719.gif Figure 30. IS vs. VCM (LM7321)
LM7321 LM7322 20205720.gif Figure 32. IS vs. VCM (LM7321)
LM7321 LM7322 20205717.gif Figure 34. IS vs. VS (LM7321)
LM7321 LM7322 20205716.gif Figure 36. IS vs. VS (LM7321)
LM7321 LM7322 20205727.gif Figure 38. Positive Output Swing vs. Supply Voltage
LM7321 LM7322 20205728.gif Figure 40. Negative Output Swing vs. Supply Voltage
LM7321 LM7322 20205782.gif Figure 42. Open-Loop Frequency Response with Various Capacitive Load
LM7321 LM7322 20205784.gif Figure 44. Open-Loop Frequency Response with Various Supply Voltage
LM7321 LM7322 20205739.gif Figure 46. CMRR vs. Frequency
LM7321 LM7322 20205741.gif Figure 48. −PSRR vs. Frequency
LM7321 LM7322 20205749.gif Figure 50. Large Signal Step Response
LM7321 LM7322 20205743.gif Figure 52. Input Referred Noise Density vs. Frequency
LM7321 LM7322 20205745.gif Figure 54. THD+N vs. Frequency
LM7321 LM7322 20205747.gif Figure 56. THD+N vs. Output Amplitude