SNOS875H January   2000  – December 2024 LMC6035 , LMC6036

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information: LMC6035
    5. 5.5 Thermal Information: LMC6036
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Capacitive Load Tolerance
    2. 7.2 Typical Applications
      1. 7.2.1 Differential Driver
      2. 7.2.2 Low-Pass Active Filter
        1. 7.2.2.1 Low-Pass Frequency Scaling Procedure
      3. 7.2.3 High-Pass Active Filter
        1. 7.2.3.1 High-Pass Frequency Scaling Procedure
      4. 7.2.4 Dual-Amplifier Bandpass Filter
        1. 7.2.4.1 DABP Component Selection Procedure
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
        1. 7.3.1.1 Printed Circuit Board (PCB) Layout for High-Impedance Work
        2. 7.3.1.2 DSBGA Considerations
      2. 7.3.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3.     Trademarks
    4. 8.3 Electrostatic Discharge Caution
    5. 8.4 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • YAF|8
  • DGK|8
  • YZR|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Thermal Information: LMC6036

THERMAL METRIC(1) LMC6036 UNIT
D (SOIC) PW (TSSOP)
14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 83.0 99.5 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 42.7 31.3 °C/W
RθJB Junction-to-board thermal resistance 42.4 56.4 °C/W
ψJT Junction-to-top characterization parameter 7.0 1.0 °C/W
ψJB Junction-to-board characterization parameter 42.0 55.7 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.