SNOSC51D March   1998  â€“ February 2024 LMC660 , LMC662

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information LMC662
    5. 5.5 Thermal Information LMC660
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Amplifier Topology
      2. 6.1.2 Compensating Input Capacitance
      3. 6.1.3 Capacitive Load Tolerance
      4. 6.1.4 Bias Current Testing
    2. 6.2 Typical Applications
    3. 6.3 Layout
      1. 6.3.1 Layout Guidelines
        1. 6.3.1.1 Printed Circuit Board Layout for High-Impedance Work
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3.     Trademarks
    4. 7.3 Electrostatic Discharge Caution
    5. 7.4 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|14
  • N|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Typical Applications

Additional single-supply applications ideas can be found in the LM358 data sheet. The LMC66x is pin-for-pin compatible with the LM358 and offers greater bandwidth and input resistance over the LM358. These features can improve the performance of many existing single-supply applications. Be aware, however, that the supply voltage range of the LM662 is smaller than that of the LM358.

GUID-94547694-239F-4396-9748-3B8B6ADAF6FD-low.pngFigure 6-6 Low Leakage Sample and Hold
GUID-719DABCE-D249-4C3F-BE46-1F43E99B46CA-low.png
GUID-D30D303E-209A-405C-986A-C5093298A5EF-low.pngFigure 6-7 Instrumentation Amplifier

Use low drift resistors for good CMRR performance over temperature. Matching of R3 to R6 and R4 to R7 affects CMRR. Gain can be adjusted through R2. CMRR can be adjusted through R7. An improved circuit can be designed using the RES11A-Q1, low drift, precision matched resistor pairs. A precise gain of 99 is easily implemented as shown in Figure 6-8.

GUID-20240205-SS0I-S07T-L8QK-7K0JCSSXLPWM-low.svg Figure 6-8 Improved Instrumentation Amplifier With the RES11A
GUID-1E01EFB5-3CA1-4893-9886-2A5850205428-low.png
Oscillator frequency is determined by R1, R2, C1, and C2:

fOSC = 1/2Ï€RC

where R = R1 = R2 and C = C1 = C2.
Figure 6-9 Sine-Wave Oscillator

This circuit, as shown, oscillates at 2.0kHz with a peak-to-peak output swing of 4.5V.

GUID-4E319489-8A09-44C7-A22E-F8CEB1E6FFD1-low.png Figure 6-10 1Hz Square-Wave Oscillator
GUID-C64CCA09-EB2A-4658-A8F6-1B678508E809-low.png Figure 6-11 Power Amplifier
GUID-6FA5FF44-7BE1-4CF6-B1CE-9CF077D04F1E-low.png
fO = 10Hz, Q = 2.1, gain = −8.8
Figure 6-12 10Hz Band-Pass Filter
GUID-09C1D7D9-9356-441B-809C-B9D001D03C2A-low.png
fc = 10Hz, d = 0.895, gain = 1, 2dB pass-band ripple
Figure 6-13 10Hz High-Pass Filter
GUID-854D2C35-2CD1-4E43-8115-93C1C9248203-low.png Figure 6-14 1Hz Low Pass Filter
(Maximally Flat, Dual Supply Only)
GUID-444DF002-CDA4-48DB-B6C3-CF33E88171EF-low.png
Gain = −46.8 Output offset voltage reduced to the level of the input offset voltage of the bottom amplifier (typically 1mV).
Figure 6-15 High Gain Amplifier with
Offset Voltage Reduction