SNAS578D February   2012  – March 2016 LMK00306

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Differential Voltage Measurement Terminology
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VCC and VCCO Power Supplies
      2. 8.3.2 Clock Inputs
      3. 8.3.3 Clock Outputs
        1. 8.3.3.1 Reference Output
  9. 9 Application and Implementation
    1. 9.1 Driving the Clock Inputs
    2. 9.2 Crystal Interface
    3. 9.3 Termination and Use of Clock Drivers
      1. 9.3.1 Termination for DC Coupled Differential Operation
      2. 9.3.2 Termination for AC Coupled Differential Operation
      3. 9.3.3 Termination for Single-Ended Operation
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Sequencing
    2. 10.2 Current Consumption and Power Dissipation Calculations
      1. 10.2.1 Power Dissipation Example: Worst-Case Dissipation
    3. 10.3 Power Supply Bypassing
      1. 10.3.1 Power Supply Ripple Rejection
    4. 10.4 Thermal Management
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
        1. 13.4 Thermal Management
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • NJK|36
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
VCC, VCCO Supply Voltages -0.3 3.6 V
VIN Input Voltage -0.3 (VCC + 0.3) V
TSTG Storage Temperature -65 +150 °C
TL Lead Temperature (solder 4 s) +260 °C
TJ Junction Temperature +150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Machine model (MM) ±150
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±750 V may actually have higher performance.

6.3 Recommended Operating Conditions

PARAMETER MIN TYP MAX UNIT
TA Ambient Temperature Range -40 25 85 °C
TJ Junction Temperature 125 °C
VCC Core Supply Voltage Range 3.15 3.3 3.45 V
VCCO Output Supply Voltage Range (1)(2) 3.3 – 5%
2.5 – 5%		 3.3
2.5		 3.3 + 5%
2.5 + 5%		 V
(1) The output supply voltages or pins (VCCOA, VCCOB, and VCCOC) will be called VCCO in general when no distinction is needed, or when the output supply can be inferred from the output bank/type.
(2) Vcco should be less than or equal to Vcc (Vcco ≤ Vcc).

6.4 Thermal Information

THERMAL METRIC(1)(2) NJK0036A
(WQFN)		 UNIT
36 PINS
RθJA Junction-to-ambient thermal resistance 31.8 °C/W
RθJC(top) (DAP) Junction-to-case (top) thermal resistance 7.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Specification assumes 9 thermal vias connect the die attach pad (DAP) to the embedded copper plane on the 4-layer JEDEC board. These vias play a key role in improving the thermal performance of the package. It is recommended that the maximum number of vias be used in the board layout.

6.5 Electrical Characteristics

Unless otherwise specified: Vcc = 3.3 V ± 5%, Vcco = 3.3 V ± 5%, 2.5 V ± 5%, -40 °C ≤ TA ≤ 85 °C, CLKin driven differentially, input slew rate ≥ 3 V/ns. Typical values represent most likely parametric norms at Vcc = 3.3 V, Vcco = 3.3 V, TA = 25 °C, and at the Recommended Operation Conditions at the time of product characterization and are not ensured. (1)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CURRENT CONSUMPTION(2)
ICC_CORE Core Supply Current, All Outputs Disabled CLKinX selected 8.5 10.5 mA
OSCin selected 10 13.5 mA
ICC_PECL Additive Core Supply Current, Per LVPECL Bank Enabled 20 26.5 mA
ICC_LVDS Additive Core Supply Current, Per LVDS Bank Enabled 24 29.5 mA
ICC_HCSL Additive Core Supply Current, Per HCSL Bank Enabled 29 35 mA
ICC_CMOS Additive Core Supply Current, LVCMOS Output Enabled 3.5 5.5 mA
ICCO_PECL Additive Output Supply Current, Per LVPECL Bank Enabled Includes Output Bank Bias and Load Currents,
RT = 50 Ω to Vcco - 2V on all outputs in bank		 100 123 mA
ICCO_LVDS Additive Output Supply Current, Per LVDS Bank Enabled 20 27.5 mA
ICCO_HCSL Additive Output Supply Current, Per HCSL Bank Enabled Includes Output Bank Bias and Load Currents,
RT = 50 Ω on all outputs in bank		 50 65 mA
ICCO_CMOS Additive Output Supply Current, LVCMOS Output Enabled 200 MHz, CL = 5 pF Vcco = 3.3 V ± 5% 9 10 mA
Vcco = 2.5 V ± 5% 7 8 mA
POWER SUPPLY RIPPLE REJECTION (PSRR)
PSRRPECL Ripple-Induced Phase Spur Level Differential LVPECL Output(3) 100 kHz, 100 mVpp Ripple Injected on Vcco, Vcco = 2.5 V 156.25 MHz -65 dBc
312.5 MHz -63
PSRRLVDS Ripple-Induced Phase Spur Level Differential LVDS Output(3) 156.25 MHz -76 dBc
312.5 MHz -74
PSRRHCSL Ripple-Induced Phase Spur Level Differential HCSL Output(3) 156.25 MHz -72 dBc
312.5 MHz -63
CMOS CONTROL INPUTS (CLKin_SELn, CLKoutX_TYPEn, REFout_EN)
VIH High-Level Input Voltage 1.6 Vcc V
VIL Low-Level Input Voltage GND 0.4 V
IIH High-Level Input Current VIH = Vcc, Internal pull-down resistor 50 µA
IIL Low-Level Input Current VIL = 0 V, Internal pull-down resistor -5 0.1 µA
CLOCK INPUTS (CLKin0/CLKin0*, CLKin1/CLKin1*)
fCLKin Input Frequency Range(10) Functional up to 3.1 GHz
Output frequency range and timing specified per output type (refer to LVPECL, LVDS, HCSL, LVCMOS output specifications)		 DC 3.1 GHz
VIHD Differential Input High Voltage CLKin driven differentially Vcc V
VILD Differential Input Low Voltage GND V
VID Differential Input Voltage Swing(4) 0.15 1.3 V
VCMD Differential Input Common Mode Voltage VID = 150 mV 0.25 Vcc - 1.2 V
VID = 350 mV 0.25 Vcc - 1.1
VID = 800 mV 0.25 Vcc -0.9
VIH Single-Ended Input High Voltage CLKinX driven single-ended (AC or DC coupled), CLKinX* AC coupled to GND or externally biased within VCM range Vcc V
VIL Single-Ended Input Low Voltage GND V
VI_SE Single-Ended Input Voltage Swing(15)(17) 0.3 2 Vpp
VCM Single-Ended Input Common Mode Voltage 0.25 Vcc - 1.2 V
ISOMUX Mux Isolation, CLKin0 to CLKin1 fOFFSET > 50 kHz, PCLKinX = 0 dBm fCLKin0 = 100 MHz -84 dBc
fCLKin0 = 200 MHz -82
fCLKin0 = 500 MHz -71
fCLKin0 = 1000 MHz -65
CRYSTAL INTERFACE (OSCin, OSCout)
FCLK External Clock Frequency Range(10) OSCin driven single-ended, OSCout floating 250 MHz
FXTAL Crystal Frequency Range Fundamental mode crystal
ESR ≤ 200 Ω (10 to 30 MHz)
ESR ≤ 125 Ω (30 to 40 MHz)(5)		 10 40 MHz
CIN OSCin Input Capacitance 4 pF
LVPECL OUTPUTS (CLKoutAn/CLKoutAn*, CLKoutBn/CLKoutBn*)
fCLKout_FS Maximum Output Frequency
Full VOD Swing(10)(11)		 VOD ≥ 600 mV,
RL = 100 Ω differential		 Vcco = 3.3 V ± 5%,
RT = 160 Ω to GND		 1.0 1.2 GHz
Vcco = 2.5 V ± 5%,
RT = 91 Ω to GND		 0.75 1.0
fCLKout_RS Maximum Output Frequency
Reduced VOD Swing(10)(11)		 VOD ≥ 400 mV,
RL = 100 Ω differential		 Vcco = 3.3 V ± 5%,
RT = 160 Ω to GND		 1.5 3.1 GHz
Vcco = 2.5 V ± 5%,
RT = 91 Ω to GND		 1.5 2.3
JitterADD Additive RMS Jitter, Integration Bandwidth
10 kHz to 20 MHz(10)(6)(16) 		Vcco = 2.5 V ± 5%:
RT = 91 Ω to GND,
Vcco = 3.3 V ± 5%:
RT = 160 Ω to GND,
RL = 100 Ω differential 		CLKin: 100 MHz,
Slew rate ≥ 3 V/ns 		77 98 fs
CLKin: 156.25 MHz,
Slew rate ≥ 3 V/ns 		54 78
JitterADD Additive RMS Jitter Integration Bandwidth
1 MHz to 20 MHz(6)		 Vcco = 3.3 V,
RT = 160 Ω to GND,
RL = 100 Ω differential		 CLKin: 100 MHz,
Slew rate ≥ 3 V/ns		 59 fs
CLKin: 156.25 MHz, Slew rate ≥ 2.7 V/ns 64
CLKin: 625 MHz,
Slew rate ≥ 3 V/ns		 30
JitterADD Additive RMS Jitter with LVPECL clock source from LMK03806(6)(7) Vcco = 3.3 V,
RT = 160 Ω to GND,
RL = 100 Ω differential		 CLKin: 156.25 MHz, JSOURCE = 190 fs RMS (10 kHz to 1 MHz) 20 fs
CLKin: 156.25 MHz, JSOURCE = 195 fs RMS (12 kHz to 20 MHz) 51
Noise Floor Noise Floor
fOFFSET ≥ 10 MHz(8)(9)		 Vcco = 3.3 V,
RT = 160 Ω to GND,
RL = 100 Ω differential		 CLKin: 100 MHz,
Slew rate ≥ 3 V/ns		 -162.5 dBc/Hz
CLKin: 156.25 MHz, Slew rate ≥ 2.7 V/ns -158.1
CLKin: 625 MHz,
Slew rate ≥ 3 V/ns		 -154.4
DUTY Duty Cycle(10) 50% input clock duty cycle 45% 55%
VOH Output High Voltage TA = 25 °C, DC Measurement,
RT = 50 Ω to Vcco - 2 V		 Vcco - 1.2 Vcco - 0.9 Vcco - 0.7 V
VOL Output Low Voltage Vcco - 2.0 Vcco - 1.75 Vcco - 1.5 V
VOD Output Voltage Swing(4) 600 830 1000 mV
tR Output Rise Time
20% to 80%(15)		 RT = 160 Ω to GND, Uniform transmission line up to 10 in. with 50-Ω characteristic impedance,
RL = 100 Ω differential,CL ≤ 5 pF		 175 300 ps
tF Output Fall Time
80% to 20%(15)		 175 300 ps
LVDS OUTPUTS (CLKoutAn/CLKoutAn*, CLKoutBn/CLKoutBn*)
fCLKout_FS Maximum Output Frequency
Full VOD Swing(10)(11)		 VOD ≥ 250 mV,
RL = 100 Ω differential		 1.0 1.6 GHz
fCLKout_RS Maximum Output Frequency
Reduced VOD Swing(10)(11)		 VOD ≥ 200 mV,
RL = 100 Ω differential		 1.5 2.1 GHz
JitterADD Additive RMS Jitter,
Integration Bandwidth
10 kHz to 20 MHz(10)(6)(16)		 RL = 100 Ω differential CLKin: 100 MHz,
Slew rate ≥ 3 V/ns 		94 115 fs
CLKin: 156.25 MHz,
Slew rate ≥ 3 V/ns 		70 90
JitterADD Additive RMS Jitter
Integration Bandwidth
1 MHz to 20 MHz(6)		 Vcco = 3.3 V,
RL = 100 Ω differential		 CLKin: 100 MHz,
Slew rate ≥ 3 V/ns		 89 fs
CLKin: 156.25 MHz,
Slew rate ≥ 2.7 V/ns		 77
CLKin: 625 MHz,
Slew rate ≥ 3 V/ns		 37
Noise Floor Noise Floor
fOFFSET ≥ 10 MHz(8)(9)		 Vcco = 3.3 V,
RL = 100 Ω differential 		CLKin: 100 MHz,
Slew rate ≥ 3 V/ns		 -159.5 dBc/Hz
CLKin: 156.25 MHz,
Slew rate ≥ 2.7 V/ns		 -157.0
CLKin: 625 MHz,
Slew rate ≥ 3 V/ns		 -152.7
DUTY Duty Cycle(10) 50% input clock duty cycle 45% 55%
VOD Output Voltage Swing(4) TA = 25 °C, DC Measurement,
RL = 100 Ω differential		 250 400 450 mV
ΔVOD Change in Magnitude of VOD for Complementary Output States -50 50 mV
VOS Output Offset Voltage 1.125 1.25 1.375 V
ΔVOS Change in Magnitude of VOS for Complementary Output States -35 35 mV
ISA
ISB		 Output Short Circuit Current Single Ended TA = 25 °C,
Single ended outputs shorted to GND		 -24 24 mA
ISAB Output Short Circuit Current Differential Complementary outputs tied together -12 12 mA
tR Output Rise Time
20% to 80%(15)		 Uniform transmission line up to 10 inches with 50-Ω characteristic impedance, RL = 100 Ω differential, CL ≤ 5 pF 175 300 ps
tF Output Fall Time
80% to 20%(15)		 175 300 ps
HCSL OUTPUTS (CLKoutAn/CLKoutAn*, CLKoutBn/CLKoutBn*)
fCLKout Output Frequency Range(10) RL = 50 Ω to GND, CL ≤ 5 pF DC 400 MHz
JitterADD_PCIe Additive RMS Phase Jitter for PCIe 3.0(10) PCIe Gen 3,
PLL BW = 2–5 MHz,
CDR = 10 MHz		 CLKin: 100 MHz,
Slew rate ≥ 0.6 V/ns		 0.03 0.15 ps
JitterADD Additive RMS Jitter
Integration Bandwidth
1 MHz to 20 MHz(6)		 Vcco = 3.3 V,
RT = 50 Ω to GND		 CLKin: 100 MHz,
Slew rate ≥ 3 V/ns		 77 fs
CLKin: 156.25 MHz,
Slew rate ≥ 2.7 V/ns		 86
Noise Floor Noise Floor
fOFFSET ≥ 10 MHz(8)(9)		 Vcco = 3.3 V,
RT = 50 Ω to GND		 CLKin: 100 MHz,
Slew rate ≥ 3 V/ns		 -161.3 dBc/Hz
CLKin: 156.25 MHz,
Slew rate ≥ 2.7 V/ns		 -156.3
DUTY Duty Cycle(10) 50% input clock duty cycle 45% 55%
VOH Output High Voltage TA = 25 °C, DC Measurement, RT = 50 Ω to GND 520 810 920 mV
VOL Output Low Voltage -150 0.5 150 mV
VCROSS Absolute Crossing Voltage(10)(12) RL = 50 Ω to GND, CL ≤ 5 pF 160 350 460 mV
ΔVCROSS Total Variation of VCROSS(10)(12) 140 mV
tR Output Rise Time
20% to 80%(15)(12)		 250 MHz, Uniform transmission line up to 10 inches with 50-Ω characteristic impedance, RL = 50 Ω to GND, CL ≤ 5 pF 300 500 ps
tF Output Fall Time
80% to 20%(15)(12)		 300 500 ps
LVCMOS OUTPUT (REFout)
fCLKout Output Frequency Range(10) CL ≤ 5 pF DC 250 MHz
JitterADD Additive RMS Jitter
Integration Bandwidth
1 MHz to 20 MHz(6)		 Vcco = 3.3 V, CL ≤ 5 pF 100 MHz, Input Slew rate ≥ 3 V/ns 95 fs
Noise Floor Noise Floor
fOFFSET ≥ 10 MHz(8)(9)		 Vcco = 3.3 V, CL ≤ 5 pF 100 MHz, Input Slew rate ≥ 3 V/ns -159.3 dBc/Hz
DUTY Duty Cycle(10) 50% input clock duty cycle 45% 55%
VOH Output High Voltage 1 mA load Vcco - 0.1 V
VOL Output Low Voltage 0.1 V
IOH Output High Current (Source) Vo = Vcco / 2 Vcco = 3.3 V 28 mA
Vcco = 2.5 V 20
IOL Output Low Current (Sink) Vcco = 3.3 V 28 mA
Vcco = 2.5 V 20
tR Output Rise Time
20% to 80%(15)(12)		 250 MHz, Uniform transmission line up to 10 inches with 50-Ω characteristic impedance, RL = 50 Ω to GND, CL ≤ 5 pF 225 400 ps
tF Output Fall Time
80% to 20%(15)(12)		 225 400 ps
tEN Output Enable Time(13) CL ≤ 5 pF 3 cycles
tDIS Output Disable Time(13) 3 cycles
PROPAGATION DELAY and OUTPUT SKEW
tPD_PECL Propagation Delay
CLKin-to-LVPECL(15)		 RT = 160 Ω to GND, RL = 100 Ω differential,
CL ≤ 5 pF		 180 360 540 ps
tPD_LVDS Propagation Delay
CLKin-to-LVDS(15)		 RL = 100 Ω differential, CL ≤ 5 pF 200 400 600 ps
tPD_HCSL Propagation Delay
CLKin-to-HCSL(15)(12)		 RT = 50 Ω to GND, CL ≤ 5 pF 295 590 885 ps
tPD_CMOS Propagation Delay
CLKin-to-LVCMOS(15)(12)		 CL ≤ 5 pF Vcco = 3.3 V 900 1475 2300 ps
Vcco = 2.5 V 1000 1550 2700
tSK(O) Output Skew
LVPECL/LVDS/HCSL
(10)(12)(14)		 Skew specified between any two CLKouts with the same buffer type. Load conditions per output type are the same as propagation delay specifications. 30 50 ps
tSK(PP) Part-to-Part Output Skew
LVPECL/LVDS/HCSL
(15)(12)(14)		 80 120 ps
(1) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured.
(2) See Power Supply Recommendations for more information on current consumption and power dissipation calculations.
(3) Power supply ripple rejection, or PSRR, is defined as the single-sideband phase spur level (in dBc) modulated onto the clock output when a single-tone sinusoidal signal (ripple) is injected onto the Vcco supply. Assuming no amplitude modulation effects and small index modulation, the peak-to-peak deterministic jitter (DJ) can be calculated using the measured single-sideband phase spur level (PSRR) as follows: DJ (ps pk-pk) = [ (2 * 10(PSRR / 20)) / (π * fCLK) ] * 1E12
(4) See Differential Voltage Measurement Terminology for definition of VID and VOD voltages.
(5) The ESR requirements stated must be met to ensure that the oscillator circuitry has no startup issues. However, lower ESR values for the crystal may be necessary to stay below the maximum power dissipation (drive level) specification of the crystal. Refer to Crystal Interface for crystal drive level considerations.
(6) For the 100 MHz and 156.25 MHz clock input conditions, Additive RMS Jitter (JADD) is calculated using Method #1: JADD = SQRT(JOUT2 - JSOURCE2), where JOUT is the total RMS jitter measured at the output driver and JSOURCE is the RMS jitter of the clock source applied to CLKin. For the 625 MHz clock input condition, Additive RMS Jitter is approximated using Method #2: JADD = SQRT(2*10dBc/10) / (2*π*fCLK), where dBc is the phase noise power of the Output Noise Floor integrated from 1 to 20 MHz bandwidth. The phase noise power can be calculated as: dBc = Noise Floor + 10*log10(20 MHz - 1 MHz). The additive RMS jitter was approximated for 625 MHz using Method #2 because the RMS jitter of the clock source was not sufficiently low enough to allow practical use of Method #1. Refer to the “Noise Floor vs. CLKin Slew Rate” and “RMS Jitter vs. CLKin Slew Rate” plots in Typical Characteristics.
(7) 156.25 MHz LVPECL clock source from LMK03806 with 20 MHz crystal reference (crystal part number: ECS-200-20-30BU-DU). JSOURCE = 190 fs RMS (10 kHz to 1 MHz) and 195 fs RMS (12 kHz to 20 MHz). Refer to the LMK03806 datasheet for more information.
(8) The noise floor of the output buffer is measured as the far-out phase noise of the buffer. Typically this offset is ≥ 10 MHz, but for lower frequencies this measurement offset can be as low as 5 MHz due to measurement equipment limitations.
(9) Phase noise floor will degrade as the clock input slew rate is reduced. Compared to a single-ended clock, a differential clock input (LVPECL, LVDS) will be less susceptible to degradation in noise floor at lower slew rates due to its common mode noise rejection. However, it is recommended to use the highest possible input slew rate for differential clocks to achieve optimal noise floor performance at the device outputs.
(10) Specification is ensured by characterization and is not tested in production.
(11) See Typical Characteristics for output operation over frequency.
(12) AC timing parameters for HCSL or CMOS are dependent on output capacitive loading.
(13) Output Enable Time is the number of input clock cycles it takes for the output to be enabled after REFout_EN is pulled high. Similarly, Output Disable Time is the number of input clock cycles it takes for the output to be disabled after REFout_EN is pulled low. The REFout_EN signal should have an edge transition much faster than that of the input clock period for accurate measurement.
(14) Output skew is the propagation delay difference between any two outputs with identical output buffer type and equal loading while operating at the same supply voltage and temperature conditions.
(15) Parameter is specified by design, not tested in production.
(16) 100 MHz and 156.25 MHz input source from Rohde & Schwarz SMA100A Low-Noise Signal Generator and Sine-to-Square-wave Conversion block.
(17) For clock input frequency ≥ 100 MHz, CLKinX can be driven with single-ended (LVCMOS) input swing up to 3.3 Vpp. For clock input frequency < 100 MHz, the single-ended input swing should be limited to 2 Vpp max to prevent input saturation (refer to Driving the Clock Inputs for interfacing 2.5 V/3.3 V LVCMOS clock input < 100 MHz to CLKinX).

6.6 Typical Characteristics

Unless otherwise specified: Vcc = 3.3 V, Vcco = 3.3 V, TA = 25 °C, CLKin driven differentially, input slew rate ≥ 3 V/ns. Consult Table 1 at the end of Typical Characteristics for graph footnotes.
LMK00306 30177476.gif
Figure 1. LVPECL Output Swing (VOD) vs. Frequency
LMK00306 30177491.gif
Figure 3. LVPECL Output Swing @ 156.25 MHz
LMK00306 30177493.gif
Figure 5. LVPECL Output Swing @ 1.5 GHz
LMK00306 30177498.gif
Figure 7. HCSL Output Swing @ 250 MHz
LMK00306 30177477.gif
Figure 9. Noise Floor vs. CLKin Slew Rate @ 100 MHz
LMK00306 Noise_Floor_CLKin.gif
Figure 11. Noise Floor vs. CLKin Slew Rate @ 625 MHz
LMK00306 30177481.gif
See Note 1 in Graph Notes
Figure 13. RMS Jitter vs. CLKin Slew Rate @ 156.25 MHz
LMK00306 PSRR_vs_Ripple.gif
Figure 15. PSRR vs. Ripple Frequency @ 156.25 MHz
LMK00306 30177485.gif
Figure 17. Propagation Delay vs. Temperature
LMK00306 30177496.png
See Note 1 in Graph Notes table
Figure 19. LVDS Phase Noise @ 100 MHz
LMK00306 30177431.gif
See Notes 2 and 3 in Graph Notes table
Figure 21. Crystal Power Dissipation vs. RLIM
LMK00306 30177475.gif
Figure 2. LVDS Output Swing (VOD) vs. Frequency
LMK00306 30177492.gif
Figure 4. LVDS Output Swing @ 156.25 MHz
LMK00306 30177494.gif
Figure 6. LVDS Output Swing @ 1.5 GHz
LMK00306 30177499.gif
Figure 8. LVCMOS Output Swing @ 250 MHz
LMK00306 30177478.gif
Figure 10. Noise Floor vs. CLKin Slew Rate @ 156.25 MHz
LMK00306 30177480.gif
See Note 1 in Graph Notes
Figure 12. RMS Jitter vs. CLKin Slew Rate @ 100 MHz
LMK00306 30177482.gif
Figure 14. RMS Jitter vs. CLKin Slew Rate @ 625 MHz
LMK00306 30177484.gif
Figure 16. PSRR vs. Ripple Frequency @ 312.5 MHz
LMK00306 30177495.png
See Note 1 in Graph Notes table
Figure 18. LVPECL Phase Noise @ 100 MHz
LMK00306 30177497.png
See Note 1 in Graph Notes table
Figure 20. HCSL Phase Noise @ 100 MHz
LMK00306 30177432.gif
See Notes 2 and 3 in Graph Notes table.
Figure 22. LVDS Phase Noise in Crystal Mode

Table 1. Graph Notes

NOTE
(1) The typical RMS jitter values in the plots show the total output RMS jitter (JOUT) for each output buffer type and the source clock RMS jitter (JSOURCE). From these values, the Additive RMS Jitter can be calculated as: JADD = SQRT(JOUT2 - JSOURCE2).
(2) 20 MHz crystal characteristics: Abracon ABL series, AT cut, CL = 18 pF , C0 = 4.4 pF measured (7 pF max), ESR = 8.5 Ω measured (40 Ω max), and Drive Level = 1 mW max (100 µW typical).
(3) 40 MHz crystal characteristics: Abracon ABLS2 series, AT cut, CL = 18 pF , C0 = 5 pF measured (7 pF max), ESR = 5 Ω measured (40 Ω max), and Drive Level = 1 mW max (100 µW typical).