SNOS976M November   2001  – September 2016 LMV981-N , LMV982-N

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics - DC, 1.8 V
    6. 7.6  Electrical Characteristics - AC, 1.8 V
    7. 7.7  Electrical Characteristics - DC, 2.7 V
    8. 7.8  Electrical Characteristics - AC, 2.7 V
    9. 7.9  Electrical Characteristics - DC, 5 V
    10. 7.10 Electrical Characteristics - AC, 5 V
    11. 7.11 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Input and Output Stage
      2. 8.4.2 Shutdown Mode
      3. 8.4.3 Input Bias Current Consideration
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 High-Side Current-Sensing Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Half-Wave Rectifier Applications
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Instrumentation Amplifier With Rail-to-Rail Input and Output Application
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curve
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage (V+ – V −) 5.5 V
Differential input voltage ±Supply voltage
Voltage at input/output pins V++ 0.3 V– - 0.3 V
Junction temperature(3) 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) For soldering specifications, see TI application report, Absolute Maximum Ratings for Soldering (SNOA549).
(3) The maximum power dissipation is a function of TJ(MAX) , RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX)–TA)/RθJA. All numbers apply for packages soldered directly into a PCB.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Machine model(2) ±200
(1) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage 1.8 5 V
Temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) LMV981-N LMV982-N UNIT
YZR
(DSBGA)		 DCK
(SC70)		 DBV
(SOT-23)		 DGS
(VSSOP)
6 PINS 6 PINS 6 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 138.2 229.1 209.9 182.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 1.2 116.1 181.2 73.1 °C/W
RθJB Junction-to-board thermal resistance 23.4 53.3 53.2 103.3 °C/W
ψJT Junction-to-top characterization parameter 5 8.8 55.5 12.8 °C/W
ψJB Junction-to-board characterization parameter 23.2 52.7 52.6 101.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics – DC, 1.8 V

TJ = 25°C, V+ = 1.8 V, V– = 0 V, VCM = V+/2, VO = V+/2, RL > 1 MΩ, and SHDN tied to V+ (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV981-N (single) TJ = 25°C 1 4 mV
TJ = –40°C to 125°C 6
LMV982-N (dual) TJ = 25°C 1 5.5
TJ = –40°C to 125°C 7.5
TCVOS Input offset voltage average drift 5.5 µV/°C
IB Input bias current TJ = 25°C 15 35 nA
TJ = –40°C to 125°C 50
IOS Input offset current TJ = 25°C 13 25 nA
TJ = –40°C to 125°C 40
IS Supply current
(per channel)		 TJ = 25°C 103 185 µA
TJ = –40°C to 125°C 205
In shutdown LMV981-N
(single)		 TJ = 25°C 0.156 1
TJ = –40°C to 125°C 2
LMV982-N
(dual)		 TJ = 25°C 0.178 3.5
TJ = –40°C to 125°C 5
CMRR Common mode rejection ratio LMV981-N, 0 V ≤ VCM ≤ 0.6 V,
1.4 V ≤ VCM ≤ 1.8 V(4)		 TJ = 25°C 60 78 dB
TJ = –40°C to 125°C 55
LMV982, 0 V ≤ VCM ≤ 0.6 V,
1.4 V ≤ VCM ≤ 1.8 V(4)		 TJ = 25°C 55 76
TJ = –40°C to 125°C 50
–0.2 V ≤ VCM ≤ 0 V, 1.8 V ≤ VCM ≤ 2 V 50 72
PSRR Power supply rejection ratio 1.8 V ≤ V+ ≤ 5 V TJ = 25°C 75 100 dB
TJ = –40°C to 125°C 70
CMVR Input common-mode voltage For CMRR range ≥ 50 dB TA = 25°C V− − 0.2 –0.2 V
2.1 V+ + 0.2
TA = –40°C to 85°C V− V+
TA = 125°C V− + 0.2 V+ − 0.2
AV Large signal voltage gain
LMV981-N (single)		 RL = 600 Ω to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 TJ = 25°C 77 101 dB
TJ = –40°C to 125°C 73
RL = 2 kΩ to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 TJ = 25°C 80 105
TJ = –40°C to 125°C 75
Large signal voltage gain
LMV982-N (dual)		 RL = 600 Ω to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 TJ = 25°C 75 90 dB
TJ = –40°C to 125°C 72
RL = 2 kΩ to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 TJ = 25°C 78 100
TJ = –40°C to 125°C 75
VO Output swing RL = 600 Ω to 0.9 V,
VIN = ±100 mV 		TJ = 25°C 1.65 1.72 V
0.077 0.105
TJ = –40°C to 125°C 1.63 0.12
RL = 2 kΩ to 0.9 V,
VIN = ±100 mV 		TJ = 25°C 1.75 1.77
0.024 0.035
TJ = –40°C to 125°C 1.74 0.04
IO Output short circuit current(5) Sourcing, VO = 0 V,
VIN = 100 mV		 TJ = 25°C 4 8 mA
TJ = –40°C to 125°C 3.3
Sinking, VO = 1.8 V,
VIN = –100 mV		 TJ = 25°C 7 9
TJ = –40°C to 125°C 5
Ton Turnon time from shutdown 19 µs
VSHDN Turnon voltage to enable part 1 V
Turnoff voltage 0.55
(1) Electrical characteristics table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) For ensured temperature ranges, see input common-mode voltage range specifications.
(5) Applies to both single-supply and split-supply operation. Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

7.6 Electrical Characteristics – AC, 1.8 V

TJ = 25°C, V+ = 1.8 V, V– = 0 V, VCM = V+/2, VO = V+/2, RL > 1 MΩ, and SHDN tied to V+ (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate(4) 0.35 V/µs
GBW Gain-bandwidth product 1.4 MHz
Φm Phase margin 67 °
Gm Gain margin 7 dB
en Input-referred voltage noise f = 10 kHz, VCM = 0.5 V 60 nV/√Hz
in Input-referred current noise f = 10 kHz 0.08 pA/√Hz
THD Total harmonic distortion f = 1 kHz, AV = +1, RL = 600 Ω,
VIN = 1 VPP		 0.023%
Amp-to-amp isolation(5) 123 dB
(1) Electrical characteristics table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
(5) Input referred, RL = 100 kΩ connected to V+/ 2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V, VO = V+).

7.7 Electrical Characteristics – DC, 2.7 V

TJ = 25°C, V+ = 2.7 V, V– = 0 V, VCM = V+/2, VO = V+/2, RL > 1 MΩ, and SHDN tied to V+ (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV981-N (single) TJ = 25°C 1 4 mV
TJ = –40°C to 125°C 6
LMV982-N (dual) TJ = 25°C 1 6 mV
TJ = –40°C to 125°C 7.5
TCVOS Input offset voltage average drift 5.5 µV/°C
IB Input bias current TJ = 25°C 15 35 nA
TJ = –40°C to 125°C 50
IOS Input offset current TJ = 25°C 8 25 nA
TJ = –40°C to 125°C 40
IS Supply current
(per channel)		 TJ = 25°C 105 190 µA
TJ = –40°C to 125°C 210
In shutdown LMV981-N
(single)		 TJ = 25°C 0.061 1
TJ = –40°C to 125°C 2
LMV982-N
(dual)		 TJ = 25°C 0.101 3.5
TJ = –40°C to 125°C 5
CMRR Common mode rejection ratio LMV981-N, 0 V ≤ VCM ≤ 1.5 V,
2.3 V ≤ VCM ≤ 2.7 V(4)		 TJ = 25°C 60 81 dB
TJ = –40°C to 125°C 55
LMV982, 0 V ≤ VCM ≤ 1.5 V,
2.3 V ≤ VCM ≤ 2.7 V(4)		 TJ = 25°C 55 80
TJ = –40°C to 125°C 50
−0.2 V ≤ VCM ≤ 0 V, 2.7 V ≤ VCM ≤ 2.9 V 50 74
PSRR Power supply rejection ratio 1.8 V ≤ V+ ≤ 5 V, VCM = 0.5 V TJ = 25°C 75 100 dB
TJ = –40°C to 125°C 70
CMVR Input common mode voltage For CMRR Range ≥ 50 dB TA = 25°C V− − 0.2 –0.2 V
3 V+ + 0.2
TA = −40°C to 85°C V− V+
TA = 125°C V− + 0.2 V+ − 0.2
AV Large signal voltage gain
LMV981-N (single)		 RL = 600 Ω to 1.35 V,
VO = 0.2 V to 2.5 V		 TJ = 25°C 87 104 dB
TJ = –40°C to 125°C 86
RL = 2 kΩ to 1.35 V,
VO = 0.2 V to 2.5 V		 TJ = 25°C 92 110
TJ = –40°C to 125°C 91
Large signal voltage gain
LMV982-N (dual)		 RL = 600 Ω to 1.35 V,
VO = 0.2 V to 2.5 V		 TJ = 25°C 78 90
TJ = –40°C to 125°C 75
RL = 2 kΩ to 1.35 V,
VO = 0.2 V to 2.5 V		 TJ = 25°C 81 100
TJ = –40°C to 125°C 78
VO Output swing RL = 600 Ω to 1.35 V,
VIN = ±100 mV 		TJ = 25°C 2.55 2.62 V
0.083 0.11
TJ = –40°C to 125°C 2.53 0.13
RL = 2 kΩ to 1.35 V,
VIN = ±100 mV		 TJ = 25°C 2.65 2.675
0.025 0.04
TJ = –40°C to 125°C 2.64 0.045
IO Output short circuit current(5) Sourcing, VO = 0 V,
VIN = 100 mV		 TJ = 25°C 20 30 mA
TJ = –40°C to 125°C 15
Sinking, VO = 0 V,
VIN = –100 mV		 TJ = 25°C 18 25
TJ = –40°C to 125°C 12
Ton Turnon time from shutdown 12.5 µs
VSHDN Turnon voltage to enable part 1.9 V
Turnoff voltage 0.8
(1) Electrical characteristics table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) For ensured temperature ranges, see input common mode voltage range specifications.
(5) Applies to both single-supply and split-supply operation. Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

7.8 Electrical Characteristics – AC, 2.7 V

TJ = 25°C, V+ = 2.7 V, V − = 0 V, VCM = 1 V, VO = 1.35 V, RL > 1 MΩ, and SHDN tied to V+ (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate(4)   0.4 V/µs
GBW Gain-bandwidth product 1.4 MHz
Φm Phase margin 70 °
Gm Gain margin 7.5 dB
en Input-referred voltage noise f = 10 kHz, VCM = 0.5 V 57 nV/√Hz
in Input-referred current noise f = 10 kHz 0.08 pA/√Hz
THD Total harmonic distortion f = 1 kHz, AV = +1, RL = 600 Ω,
VIN = 1 VPP		 0.022%
Amp-to-amp isolation(5)   123 dB
(1) Electrical characteristics table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
(5) Input referred, RL = 100 kΩ connected to V+/2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V, VO = V+).

7.9 Electrical Characteristics – DC, 5 V

TJ = 25°C, V+ = 5 V, V − = 0 V, VCM = V+/2, VO = V+/2, RL > 1 MΩ, and SHDN tied to V+ (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV981-N (single) TJ = 25°C 1 4 mV
TJ = –40°C to 125°C 6
LMV982-N (dual) TJ = 25°C 1 5.5
TJ = –40°C to 125°C 7.5
TCVOS Input offset voltage average drift 5.5 µV/°C
IB Input bias current TJ = 25°C 14 35 nA
TJ = –40°C to 125°C 50
IOS Input offset current TJ = 25°C 9 25 nA
TJ = –40°C to 125°C 40
IS Supply current (per channel) TJ = 25°C 116 210 µA
TJ = –40°C to 125°C 230
In shutdown LMV981-N (single) TJ = 25°C 0.201 1 µA
TJ = –40°C to 125°C 2
LMV982-N (dual) TJ = 25°C 0.302 3.5
TJ = –40°C to 125°C 5
CMRR Common mode rejection ratio(4) 0 V ≤ VCM ≤ 3.8 V,
4.6 V ≤ VCM ≤ 5 V		 TJ = 25°C 60 86 dB
TJ = –40°C to 125°C 55
−0.2 V ≤ VCM ≤ 0 V, 5 V ≤ VCM ≤ 5.2 V 50 78
PSRR Power supply rejection ratio 1.8 V ≤ V+ ≤ 5 V,
VCM = 0.5 V		 TJ = 25°C 75 100 dB
TJ = –40°C to 125°C 70
CMVR Input common mode voltage For CMRR range ≥ 50 dB TA = 25°C V− − 0.2 –0.2 V
5.3 V+ + 0.2
TA = −40°C to 85°C V− V+
TA = 125°C V− + 0.3 V+ − 0.3
AV Large signal voltage gain
LMV981-N (single)		 RL = 600 Ω to 2.5 V,
VO = 0.2 V to 4.8 V		 TJ = 25°C 88 102 dB
TJ = –40°C to 125°C 87
RL = 2 kΩ to 2.5 V,
VO = 0.2 V to 4.8 V		 TJ = 25°C 94 113
TJ = –40°C to 125°C 93
Large signal voltage gain
LMV982-N (dual)		 RL = 600 Ω to 2.5 V,
VO = 0.2 V to 4.8 V		 TJ = 25°C 81 90 dB
TJ = –40°C to 125°C 78
RL = 2 kΩ to 2.5 V,
VO = 0.2 V to 4.8 V		 TJ = 25°C 85 100
TJ = –40°C to 125°C 82
VO Output swing RL = 600 Ω to 2.5 V,
VIN = ±100 mV		 TJ = 25°C 4.855 4.89 V
0.12 0.16
TJ = –40°C to 125°C 4.835 0.18
RL = 2 kΩ to 2.5 V,
VIN = ±100 mV		 TJ = 25°C 4.945 4.967
0.037 0.065
TJ = –40°C to 125°C 4.935 0.075
IO Output short-circuit current(5) LMV981-N, sourcing,
VO = 0 V, VIN = 100 mV		 TJ = 25°C 80 100 mA
TJ = –40°C to 125°C 68
Sinking, VO = 5 V,
VIN = −100 mV		 TJ = 25°C 58 65
TJ = –40°C to 125°C 45
Ton Turnon time from shutdown 8.4 µs
VSHDN Turnon voltage to enable part 4.2 V
Turnoff voltage 0.8
(1) Electrical characteristics table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) For ensured temperature ranges, see input common mode voltage range specifications.
(5) Applies to both single-supply and split-supply operation. Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

7.10 Electrical Characteristics – AC, 5 V

TJ = 25°C, V+ = 5 V, V − = 0 V, VCM = V+/2, VO = 2.5 V, R L > 1 MΩ, and SHDN tied to V+ (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate(4) 0.42 V/µs
GBW Gain-bandwidth product 1.5 MHz
Φm Phase margin 71 °
Gm Gain margin 8 dB
en Input-referred voltage noise f = 10 kHz, VCM = 1 V 50 nV/√Hz
in Input-referred current noise f = 10 kHz 0.08 pA/√Hz
THD Total harmonic distortion f = 1 kHz, AV = +1, RL = 600 Ω,
VO = 1 V PP		 0.022%
Amp-to-amp isolation(5)   123 dB
(1) Electrical characteristics table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ > TA. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Connected as voltage follower with input step from V– to V+. Number specified is the slower of the positive and negative slew rates.
(5) Input referred, RL = 100 kΩ connected to V+/2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V, VO = V+).

7.11 Typical Characteristics

VS = 5 V, single supply, and TA = 25°C (unless otherwise noted)
LMV981-N LMV982-N 20021422.gif Figure 1. Supply Current vs Supply Voltage (LMV981-N)
LMV981-N LMV982-N 20021428.gif Figure 3. Sinking Current vs Output Voltage
LMV981-N LMV982-N 20021450.gif Figure 5. Output Voltage Swing vs Supply Voltage
LMV981-N LMV982-N 200214g9.gif Figure 7. Gain and Phase vs Frequency
LMV981-N LMV982-N 200214g11.gif Figure 9. Gain and Phase vs Frequency
LMV981-N LMV982-N 20021456.gif Figure 11. PSRR vs Frequency
LMV981-N LMV982-N 20021466.gif Figure 13. Input Current Noise vs Frequency
LMV981-N LMV982-N 20021468.gif Figure 15. THD vs Frequency
LMV981-N LMV982-N 20021470.gif Figure 17. Small-Signal Noninverting Response
LMV981-N LMV982-N 20021472.gif Figure 19. Small-Signal Noninverting Response
LMV981-N LMV982-N 20021474.gif Figure 21. Large-Signal Noninverting Response
LMV981-N LMV982-N 20021476.gif Figure 23. Short-Circuit Current vs Temperature (Sinking)
LMV981-N LMV982-N 20021436.gif Figure 25. Offset Voltage vs Common Mode Range
LMV981-N LMV982-N 20021438.gif Figure 27. Offset Voltage vs Common Mode Range
LMV981-N LMV982-N 20021425.gif Figure 2. Sourcing Current vs Output Voltage
LMV981-N LMV982-N 20021449.gif Figure 4. Output Voltage Swing vs Supply Voltage
LMV981-N LMV982-N 200214g8.gif Figure 6. Gain and Phase vs Frequency
LMV981-N LMV982-N 200214g10.gif Figure 8. Gain and Phase vs Frequency
LMV981-N LMV982-N 20021439.gif Figure 10. CMRR vs Frequency
LMV981-N LMV982-N 20021458.gif Figure 12. Input Voltage Noise vs Frequency
LMV981-N LMV982-N 20021467.gif Figure 14. THD vs Frequency
LMV981-N LMV982-N 20021469.gif Figure 16. Slew Rate vs Supply Voltage
LMV981-N LMV982-N 20021471.gif Figure 18. Small-Signal Noninverting Response
LMV981-N LMV982-N 20021473.gif Figure 20. Large-Signal Noninverting Response
LMV981-N LMV982-N 20021475.gif Figure 22. Large-Signal Noninverting Response
LMV981-N LMV982-N 20021477.gif Figure 24. Short-Circuit Current vs Temperature (Sourcing)
LMV981-N LMV982-N 20021437.gif Figure 26. Offset Voltage vs Common Mode Range