SLOSEB7C September   2024  – September 2025 LOG300

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics Low Noise Amplifier (LNA) 
    6. 5.6 Electrical Characteristics Log Detector
    7. 5.7 Electrical Characteristics LNA + Log Detector (AFE)
    8. 5.8 Typical Characteristics: VCC = 5V
    9. 5.9 Typical Characteristics: VCC = 3.3V
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Offset Correction Loop (OCL)
      2. 7.3.2 Single and Differential Input
      3. 7.3.3 Input Frequency Detect
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Ultrasonic Distance Measurement
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Third-Party Products Disclaimer
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGT|16
  • D|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) LOG300 UNIT
D (SOIC) VQFN (RGT)
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 81.1 48.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43.3 56.0 °C/W
RθJB Junction-to-board thermal resistance 43.5 23.4 °C/W
ψJT Junction-to-top characterization parameter 7.7 1.6 °C/W
ψJB Junction-to-board characterization parameter 43.1 23.4 °C/W
RθJC(bottom) Junction-to-case (bottom) thermal resistance N/A 8.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.