SBOS279F September   2003  – September 2016 OPA2373 , OPA2374 , OPA373 , OPA374 , OPA4374

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information: OPA373
    5. 7.5  Thermal Information: OPA374
    6. 7.6  Thermal Information: OPA2373
    7. 7.7  Thermal Information: OPA2374
    8. 7.8  Thermal Information: OPA4374
    9. 7.9  Electrical Characteristics: VS = 2.7 V to 5.5 V
    10. 7.10 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Common-Mode Voltage Range
      3. 8.3.3 Rail-to-Rail Input
      4. 8.3.4 Rail-to-Rail Output
      5. 8.3.5 Capacitive Load and Stability
      6. 8.3.6 Enable or Shutdown
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 System Examples
      1. 9.3.1 Driving ADCs
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 VSON Package
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
        1. 12.1.1.1 TINA-TI™ (Free Software Download)
        2. 12.1.1.2 DIP Adapter EVM
        3. 12.1.1.3 Universal Op Amp EVM
        4. 12.1.1.4 TI Precision Designs
        5. 12.1.1.5 WEBENCH Filter Designer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply 7 V
Signal input pin(2) −0.5 (V+) + 0.5
Current Signal input pin(2) –10 10 mA
Output short-circuit(3) Continuous
Temperature Operating, TA –55 150 °C
Junction, TJ 150
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be current limited to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage ±1.35 (2.7) ±2.75 (5.5) V
TA Operating temperature –40 125 °C

7.4 Thermal Information: OPA373

THERMAL METRIC(1) OPA373 UNIT
D (SOIC) DBV (SOT-23)
8 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 128.4 184.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 76.7 146.2 °C/W
RθJB Junction-to-board thermal resistance 68.8 36.4 °C/W
ψJT Junction-to-top characterization parameter 27.9 33.6 °C/W
ψJB Junction-to-board characterization parameter 68.3 35.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Thermal Information: OPA374

THERMAL METRIC(1) OPA374 UNIT
D (SOIC) DBV (SOT-23)
8 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 125.1 220.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 71.7 129 °C/W
RθJB Junction-to-board thermal resistance 65.5 46.4 °C/W
ψJT Junction-to-top characterization parameter 26.2 21 °C/W
ψJB Junction-to-board characterization parameter 65 45.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.6 Thermal Information: OPA2373

THERMAL METRIC(1) OPA2373 UNIT
DGS (VSON) DRC (VSSOP)
10 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 170.6 56.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 59.8 76.7 °C/W
RθJB Junction-to-board thermal resistance 91 30.6 °C/W
ψJT Junction-to-top characterization parameter 10.4 3.7 °C/W
ψJB Junction-to-board characterization parameter 89.6 30.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — 11.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.7 Thermal Information: OPA2374

THERMAL METRIC(1) OPA2374 UNIT
D (SOIC) DCN (SOT-23)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 117.8 171.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.1 73.5 °C/W
RθJB Junction-to-board thermal resistance 58.4 106.3 °C/W
ψJT Junction-to-top characterization parameter 19.3 15.4 °C/W
ψJB Junction-to-board characterization parameter 57.9 105.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.8 Thermal Information: OPA4374

THERMAL METRIC(1) OPA4374 UNIT
D (SOIC) PW (TSSOP)
14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 86.5 112.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 45 34.1 °C/W
RθJB Junction-to-board thermal resistance 41.1 57.1 °C/W
ψJT Junction-to-top characterization parameter 12.3 2.9 °C/W
ψJB Junction-to-board characterization parameter 40.8 56.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.9 Electrical Characteristics: VS = 2.7 V to 5.5 V

At TA = 25°C, RL = 10 kΩ connected to VS/2, and VOUT = VS/2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage VS = 5 V 1 5 mV
Input offset voltage
versus temperature		 TA = –40°C to 125°C 6.5 mV
dVOS/dT Input offset voltage
versus drift		 TA = –40°C to +125°C 3 µV/°C
PSRR Input offset voltage
versus power supply		 VS = 2.7 V to 5.5 V,
VCM < (V+) – 2 V		 TA = 25°C 25 100 µV/V
TA = –40°C to 125°C 150
Channel separation, DC 0.4 µV/V
At f = 1 kHz 128 dB
INPUT VOLTAGE
VCM Common-mode voltage range (V–) – 0.2 (V+) + 0.2 V
CMRR Common-mode rejection ratio (V–) – 0.2 V < VCM < (V+) – 2 V TA = 25°C 80 90 dB
TA = –40°C to 125°C 70
VS = 5.5 V,
(V–) – 0.2 V < VCM < (V+) + 0.2 V		 TA = 25°C 66 dB
TA = –40°C to 125°C 60 dB
INPUT BIAS CURRENT
IB Input bias current ±0.5 ±10 pA
IOS Input offset current ±0.5 ±10 pA
INPUT IMPEDANCE
Differential 1013 || 3 Ω || pF
Common-mode 1013 || 6 Ω || pF
NOISE
Input voltage noise VCM < (V+) – 2 V, f = 0.1 Hz to 10 Hz 10 µVPP
en Input voltage noise density VCM < (V+) – 2 V, f = 10 kHz 15 nV/√Hz
in Input current noise density VCM < (V+) – 2 V, f = 10 kHz 4 fA/√Hz
OPEN-LOOP GAIN
AOL Open-loop voltage gain VS = 5 V, RL = 100 kΩ,
0.025 V < VO < 4.975 V		 TA = 25°C 94 110 dB
TA = –40°C to 125°C 80
VS = 5 V, RL = 5 kΩ,
0.125 V < VO < 4.875 V		 TA = 25°C 94 106 dB
TA = –40°C to 125°C 80
OUTPUT
Voltage output swing from rail RL = 100 kΩ TA = 25°C 18 25 mV
TA = –40°C to 125°C 25 mV
RL = 5 kΩ TA = 25°C 100 125 mV
TA = –40°C to 125°C 125 mV
ISC Short-circuit current See Typical Characteristics
CLOAD Capacitive load drive See Typical Characteristics
RO Open-loop output impedance f = 1 MHz, IO = 0 mA 220 Ω
FREQUENCY RESPONSE
GBW Gain-bandwidth product CL = 100 pF 6.5 MHz
SR Slew rate CL = 100 pF, G = +1 5 V/µs
tS Settling time 0.1%, CL = 100 pF, VS = 5 V,
2-V step, G = +1		 1 µs
0.01%, CL = 100 pF, VS = 5 V,
2-V step, G = +1		 1.5 µs
Overload recovery time CL = 100 pF, VIN ● Gain > VS 0.3 µs
THD+N Total harmonic distortion + noise CL = 100 pF, VS = 5 V, VO = 3 VPP,
G = +1, f = 1 kHz		 0.0013%
ENABLE OR SHUTDOWN
tOFF Turnoff time 3 µs
tON Turnon time 12 µs
VL Logic low threshold Shutdown V– (V–) + 0.8 V
VH Logic high threshold Amplifier is active (V–) + 2 V+ V
Input bias current of Enable pin 0.2 µA
IQ(sd) Quiescent current at
shutdown (per amplifier)		 < 0.5 1 µA
POWER SUPPLY
VS Specified voltage range 2.7 5.5 V
Operating voltage range 2.3 to 5.5 V
IQ Quiescent current
(per amplifier)		 IO = 0 mA TA = 25°C 585 750 µA
TA = –40°C to 125°C 800 µA
TEMPERATURE
Specified range –40 125 °C
TA Operating range –55 150 °C
Tstg Storage range –65 150 °C

7.10 Typical Characteristics

At TA = 25°C, RL = 10 kΩ connected to VS/2, and VOUT = VS/2 (unless otherwise noted)
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_open-loop_gain_phase_vs_fqcy_bos279.gif Figure 1. Open-Loop Gain and Phase vs Frequency
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_v-noise-spec-dens_vs_fqcy_bos279.gif Figure 3. Input Voltage Noise Spectral Density vs Frequency
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_open-loop_gain_psrr_vs_temp_bos279.gif Figure 5. Open-Loop Gain and Power-Supply
Rejection Ratio vs Temperature
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_iq_vs_temp_bos279.gif Figure 7. Quiescent Current vs Temperature
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_isc_vs_temp_bos279.gif Figure 9. Short-Circuit Current vs Temperature
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_ibias_vs_temp_bos279.gif Figure 11. Input Bias Current vs Temperature
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_vout-max_vs_fqcy_bos279.gif Figure 13. Maximum Output Voltage vs Frequency
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_voffset_drift_histo_bos279.gif Figure 15. Offset Voltage Drift Magnitude
Production Distribution
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_sm-signal-ovrsht_vs_cload_bos279.gif Figure 17. Small-Signal Overshoot vs Load Capacitance
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_tsettle_vs_gain_bos279.gif Figure 19. Settling Time vs Closed-Loop Gain
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_psrr_cmrr_vs_fqcy_bos279.gif Figure 2. Power-Supply and Common-Mode
Rejection Ratio vs Frequency
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_thd-n_vs_fqcy_bos279.gif Figure 4. Total Harmonic Distortion + Noise vs Frequency
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_cmrr_vs_temp_bos279.gif Figure 6. Common-Mode Rejection Ratio vs Temperature
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_iq_vs_vsupply_bos279.gif Figure 8. Quiescent Current vs Supply Voltage
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_isc_contin_vs_vsup_bos279.gif Figure 10. Continuous Short-Circuit Current
vs Power-Supply Voltage
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_vout_vs_iout_bos279.gif Figure 12. Output Voltage Swing vs Output Current
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_voffset_histo_bos279.gif Figure 14. Offset Voltage Production Distribution
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_sm-signal-step_bos279.gif Figure 16. Small-Signal Step Response
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_lg-signal-step_bos279.gif Figure 18. Large-Signal Step Response
OPA373 OPA374 OPA2373 OPA2374 OPA4374 tc_chan_sep_vs_fqcy_bos279.gif Figure 20. Channel Separation vs Frequency