SLAS740A January   2013  – October 2015 RF430F5978

PRODUCTION DATA.  

  1. 1Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2Revision History
  3. 3Device Characteristics
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram
    2. 4.2 Signal Descriptions
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Active Mode Supply Current Into VCC Excluding External Current
    5. 5.5  Typical Characteristics - Active Mode Supply Currents
    6. 5.6  Low-Power Mode Supply Currents (Into VCC) Excluding External Current
    7. 5.7  Typical Characteristics - Low-Power Mode Supply Currents
    8. 5.8  Thermal Resistance Characteristics
    9. 5.9  Digital Inputs
    10. 5.10 Digital Outputs
    11. 5.11 Typical Characteristics - Outputs, Reduced Drive Strength (PxDS.y = 0)
    12. 5.12 Typical Characteristics - Outputs, Full Drive Strength (PxDS.y = 1)
    13. 5.13 Crystal Oscillator, XT1, Low-Frequency Mode
    14. 5.14 Internal Very-Low-Power Low-Frequency Oscillator (VLO)
    15. 5.15 Internal Reference, Low-Frequency Oscillator (REFO)
    16. 5.16 DCO Frequency
    17. 5.17 PMM, Brown-Out Reset (BOR)
    18. 5.18 PMM, Core Voltage
    19. 5.19 PMM, SVS High Side
    20. 5.20 PMM, SVM High Side
    21. 5.21 PMM, SVS Low Side
    22. 5.22 PMM, SVM Low Side
    23. 5.23 Wake-up Times From Low-Power Modes and Reset
    24. 5.24 Timer_A
    25. 5.25 USCI (UART Mode) Clock Frequency
    26. 5.26 USCI (UART Mode)
    27. 5.27 USCI (SPI Master Mode) Clock Frequency
    28. 5.28 USCI (SPI Master Mode)
    29. 5.29 USCI (SPI Slave Mode)
    30. 5.30 USCI (I2C Mode)
    31. 5.31 12-Bit ADC, Power Supply and Input Range Conditions
    32. 5.32 12-Bit ADC, Timing Parameters
    33. 5.33 12-Bit ADC, Linearity Parameters
    34. 5.34 12-Bit ADC, Temperature Sensor and Built-In VMID
    35. 5.35 REF, External Reference
    36. 5.36 REF, Built-In Reference
    37. 5.37 Comparator B
    38. 5.38 Flash Memory
    39. 5.39 JTAG and Spy-Bi-Wire Interface
    40. 5.40 RF1A CC1101 Radio Parameters
      1. 5.40.1  RF Crystal Oscillator, XT2
      2. 5.40.2  Current Consumption, Reduced-Power Modes
      3. 5.40.3  Current Consumption, Receive Mode
      4. 5.40.4  Current Consumption, Transmit Mode
      5. 5.40.5  Typical TX Current Consumption, 315 MHz
      6. 5.40.6  Typical TX Current Consumption, 433 MHz
      7. 5.40.7  Typical TX Current Consumption, 868 MHz
      8. 5.40.8  Typical TX Current Consumption, 915 MHz
      9. 5.40.9  RF Receive, Overall
      10. 5.40.10 RF Receive, 315 MHz
      11. 5.40.11 RF Receive, 433 MHz
      12. 5.40.12 RF Receive, 868 or 915 MHz
      13. 5.40.13 Typical Sensitivity, 315 MHz, Sensitivity-Optimized Setting
      14. 5.40.14 Typical Sensitivity, 433 MHz, Sensitivity-Optimized Setting
      15. 5.40.15 Typical Sensitivity, 868 MHz, Sensitivity-Optimized Setting
      16. 5.40.16 Typical Sensitivity, 915 MHz, Sensitivity-Optimized Setting
      17. 5.40.17 RF Transmit
      18. 5.40.18 Optimum PATABLE Settings for Various Output Power Levels and Frequency Bands
      19. 5.40.19 Typical Output Power, 315 MHz
      20. 5.40.20 Typical Output Power, 433 MHz
      21. 5.40.21 Typical Output Power, 868 MHz
      22. 5.40.22 Typical Output Power, 915 MHz
      23. 5.40.23 Frequency Synthesizer Characteristics
      24. 5.40.24 Typical RSSI_offset Values
    41. 5.41 3D LF Front-End Parameters
      1. 5.41.1 Recommended Operating Conditions
      2. 5.41.2 Resonant Circuits - LF Front End
      3. 5.41.3 External Antenna Coil - LF Front End
      4. 5.41.4 Resonant Circuit Capacitor - LF Front End
      5. 5.41.5 Charge Capacitor - LF Front End
      6. 5.41.6 LF Wake Receiver Electrical Characteristics
      7. 5.41.7 RSSI - LF Wake Receiver Electrical Characteristics
  6. 6Detailed Description
    1. 6.1  3D LF Wake Receiver and 3D Transponder Interface
      1. 6.1.1 3D LF Front End
      2. 6.1.2 EEPROM
      3. 6.1.3 Switch Interface
    2. 6.2  Sub-1-GHz Radio
    3. 6.3  CPU
    4. 6.4  Operating Modes
    5. 6.5  Interrupt Vector Addresses
    6. 6.6  Memory Organization
    7. 6.7  Bootloader (BSL)
    8. 6.8  JTAG Operation
      1. 6.8.1 JTAG Standard Interface
      2. 6.8.2 Spy-Bi-Wire Interface
    9. 6.9  Flash Memory
    10. 6.10 RAM
    11. 6.11 Peripherals
      1. 6.11.1  Oscillator and System Clock
      2. 6.11.2  Power-Management Module (PMM)
      3. 6.11.3  Digital I/O
      4. 6.11.4  Port Mapping Controller
      5. 6.11.5  System (SYS) Module
      6. 6.11.6  DMA Controller
      7. 6.11.7  Watchdog Timer (WDT_A)
      8. 6.11.8  CRC16
      9. 6.11.9  Hardware Multiplier
      10. 6.11.10 AES128 Accelerator
      11. 6.11.11 Universal Serial Communication Interface (USCI)
      12. 6.11.12 TA0
      13. 6.11.13 TA1
      14. 6.11.14 Real-Time Clock (RTC_A)
      15. 6.11.15 REF Voltage Reference
      16. 6.11.16 Comparator_B
      17. 6.11.17 ADC12_A
      18. 6.11.18 Embedded Emulation Module (EEM) (S Version)
      19. 6.11.19 Peripheral File Map
    12. 6.12 Input/Output Schematics
      1. 6.12.1  Port P1, P1.0 to P1.4, Input/Output With Schmitt Trigger
      2. 6.12.2  Port P1, P1.5 to P1.7, Input/Output With Schmitt Trigger
      3. 6.12.3  Port P2, P2.0 to P2.2, Input/Output With Schmitt Trigger
      4. 6.12.4  Port P2, P2.4 and P2.5, Input/Output With Schmitt Trigger
      5. 6.12.5  Port P3, P3.1 to P3.3, P3.5, and P3.7, Input/Output With Schmitt Trigger
      6. 6.12.6  Port P4, P4.0 to P4.2, Input/Output With Schmitt Trigger
      7. 6.12.7  Port P5, P5.0, Input/Output With Schmitt Trigger
      8. 6.12.8  Port P5, P5.1, Input/Output With Schmitt Trigger
      9. 6.12.9  Port J, J.0 JTAG Pin TDO, Input/Output With Schmitt Trigger or Output
      10. 6.12.10 Port J, J.1 to J.3 JTAG Pins TMS, TCK, TDI/TCLK, Input/Output With Schmitt Trigger or Output
    13. 6.13 Device Descriptor Structures
  7. 7Applications, Implementation, and Layout
    1. 7.1 Application Circuit
  8. 8Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Getting Started and Next Steps
      2. 8.1.2 Device and Development Tool Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Community Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Export Control Notice
    7. 8.7 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Voltage applied at DVCC/VBAT and AVCC pins to VSS –0.3 3.6 V
Voltage applied to any pin (excluding VCORE, RF_P, RF_N, and R_BIAS)(2) –0.3 VCC + 0.3
4.1 V Max
V
Voltage applied to VCORE, RF_P, RF_N, and R_BIAS(2) –0.3 2 V
Input RF level at pins RF_P and RF_N 10 dBm
Diode current at any device terminal ±2 mA
Storage temperature(3), Tstg –55 125 °C
Maximum junction temperature, TJ 95 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages referenced to VSS.
(3) Higher temperature may be applied during board soldering according to the current JEDEC J-STD-020 specification with peak reflow temperatures not higher than classified on the device label on the shipping boxes or reels.

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±1000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±250 V may actually have higher performance.

5.3 Recommended Operating Conditions

Typical values are specified at VCC = 3.3 V and TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage range applied at all DVCC and AVCC pins(1) during program execution and flash programming with PMM default settings. Radio is not operational with PMMCOREVx = 0, 1.(3)(4) PMMCOREVx = 0
(default after POR)
1.8 3.6 V
PMMCOREVx = 1 2.0 3.6
VCC Supply voltage range applied at all DVCC and AVCC pins(1) during program execution, flash programming, and radio operation with PMM default settings.(3)(4) PMMCOREVx = 2 2.2 3.6 V
PMMCOREVx = 3 2.4 3.6
VCC Supply voltage range applied at all DVCC and AVCC pins(1) during program execution, flash programming, and radio operation with PMMCOREVx = 2, high-side SVS level lowered (SVSHRVLx = SVSHRRRLx = 1) or high-side SVS disabled (SVSHE = 0).(5) (3)(4) PMMCOREVx = 2,
SVSHRVLx = SVSHRRRLx = 1 or SVSHE = 0
2.0 3.6 V
VSS Supply voltage applied at the exposed die attach VSS and AVSS pin 0 V
TA Operating free-air temperature –40 85 °C
TJ Operating junction temperature –40 85 °C
CVCORE Recommended capacitor at VCORE(2) 470 nF
CDVCC/ CVCORE Capacitor ratio of capacitor at DVCC to capacitor at VCORE 10
fSYSTEM Processor (MCLK) frequency(6) (see Figure 5-1) PMMCOREVx = 0
(default condition)
0 8 MHz
PMMCOREVx = 1 0 12
PMMCOREVx = 2 0 16
PMMCOREVx = 3 0 20
PINT Internal power dissipation VCC × I(DVCC) W
PIO I/O power dissipation of I/O pins powered by DVCC (VCC – VIOH) × IIOH +
VIOL × IIOL
W
PMAX Maximum allowed power dissipation, PMAX > PIO + PINT (TJ – TA) / RθJA W
(1) TI recommends powering AVCC and DVCC from the same source. A maximum difference of 0.3 V between AVCC and DVCC can be tolerated during power up and operation.
(2) A capacitor tolerance of ±20% or better is required.
(3) Modules may have a different supply voltage range specification. See the specification of the respective module in this data sheet.
(4) The minimum supply voltage is defined by the supervisor SVS levels when it is enabled. See the Section 5.19 threshold parameters for the exact values and further details.
(5) Lowering the high-side SVS level or disabling the high-side SVS might cause the LDO to operate out of regulation, but the core voltage stays within its limits and is still supervised by the low-side SVS to ensure reliable operation.
(6) Modules may have a different maximum input clock specification. See the specification of the respective module in this data sheet.
RF430F5978 op_cond_slas740.gif
A.

NOTE:

The numbers (0, 1, 2, and 3) in the fields are the supported PMMCOREVx settings.
Figure 5-1 Maximum System Frequency

5.4 Active Mode Supply Current Into VCC Excluding External Current

over recommended operating free-air temperature (unless otherwise noted)(1) (2) (3)
PARAMETER EXECUTION MEMORY VCC PMMCOREVx FREQUENCY (fDCO = fMCLK = fSMCLK) UNIT
1 MHz 8 MHz 12 MHz 16 MHz 20 MHz
TYP MAX TYP MAX TYP MAX TYP MAX TYP MAX
IAM, Flash(4) Flash 3 V 0 0.23 0.26 1.35 1.60 mA
1 0.25 0.28 1.55 2.30 2.65
2 0.27 0.30 1.75 2.60 3.45 3.90
3 0.28 0.32 1.85 2.75 3.65 4.55 5.10
IAM, RAM(5) RAM 3 V 0 0.18 0.20 0.95 1.10 mA
1 0.20 0.22 1.10 1.60 1.85
2 0.21 0.24 1.20 1.80 2.40 2.70
3 0.22 0.25 1.30 1.90 2.50 3.10 3.60
(1) All inputs are tied to 0 V or to VCC. Outputs do not source or sink any current.
(2) The currents are characterized with a Micro Crystal MS1V-T1K crystal with a load capacitance of 12.5 pF. The internal and external load capacitance are chosen to closely match the required 12.5 pF.
(3) Characterized with program executing typical data processing.
fACLK = 32786 Hz, fDCO = fMCLK = fSMCLK at specified frequency.
XTS = CPUOFF = SCG0 = SCG1 = OSCOFF = SMCLKOFF = 0.
(4) Active mode supply current when program executes in flash at a nominal supply voltage of 3 V.
(5) Active mode supply current when program executes in RAM at a nominal supply voltage of 3 V.

5.5 Typical Characteristics – Active Mode Supply Currents

RF430F5978 g_idd_vs_freq_slas740.gif Figure 5-2 Active Mode Supply Current vs MCLK Frequency

5.6 Low-Power Mode Supply Currents (Into VCC) Excluding External Current

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1) (2)
PARAMETER VCC PMMCOREVx TEMPERATURE (TA) UNIT
–40°C 25°C 60°C 85°C
TYP MAX TYP MAX TYP MAX TYP MAX
ILPM0,1MHz Low-power mode 0(3) (8) 2.2 V 0 80 100 80 100 80 100 80 100 µA
3 V 3 90 110 90 110 90 110 90 110
ILPM2 Low-power mode 2(4) (8) 2.2 V 0 6.5 11 6.5 11 6.5 11 6.5 11 µA
3 V 3 7.5 12 7.5 12 7.5 12 7.5 12
ILPM3,XT1LF Low-power mode 3, crystal mode(5) (8) 3 V 0 1.8 2.0 2.6 3.0 4.0 4.4 5.9 µA
1 1.9 2.1 3.2 4.8
2 2.0 2.2 3.4 5.1
3 2.0 2.2 2.9 3.5 4.8 5.3 7.4
ILPM3,VLO Low-power mode 3, VLO mode(6) (8) 3 V 0 0.9 1.1 2.3 2.1 3.7 3.5 5.6 µA
1 1.0 1.2 2.3 3.9
2 1.1 1.3 2.5 4.2
3 1.1 1.3 2.6 2.6 4.5 4.4 7.1
ILPM4 Low-power mode 4(7) (8) 3 V 0 0.8 1.0 2.2 2.0 3.6 3.4 5.5 µA
1 0.9 1.1 2.2 3.8
2 1.0 1.2 2.4 4.1
3 1.0 1.2 2.5 2.5 4.4 4.3 7.0
(1) All inputs are tied to 0 V or to VCC. Outputs do not source or sink any current.
(2) The currents are characterized with a Micro Crystal MS1V-T1K crystal with a load capacitance of 12.5 pF. The internal and external load capacitance are chosen to closely match the required 12.5 pF.
(3) Current for watchdog timer clocked by SMCLK included. ACLK = low frequency crystal operation (XTS = 0, XT1DRIVEx  = 0).
CPUOFF  = 1, SCG0  = 0, SCG1  = 0, OSCOFF  = 0 (LPM0), fACLK  = 32768 Hz, fMCLK = 0 MHz, fSMCLK  = fDCO  = 1 MHz
(4) Current for watchdog timer and RTC clocked by ACLK included. ACLK = low frequency crystal operation (XTS = 0, XT1DRIVEx  = 0).
CPUOFF  = 1, SCG0  = 0, SCG1  = 1, OSCOFF  = 0 (LPM2), fACLK  = 32768 Hz, fMCLK = 0 MHz, fSMCLK  = fDCO  = 0 MHz, DCO setting = 1 MHz operation, DCO bias generator enabled.
(5) Current for watchdog timer and RTC clocked by ACLK included. ACLK = low frequency crystal operation (XTS = 0, XT1DRIVEx  = 0).
CPUOFF  = 1, SCG0  = 1, SCG1  = 1, OSCOFF  = 0 (LPM3), fACLK  = 32768 Hz, fMCLK = fSMCLK  = fDCO  = 0 MHz
(6) Current for watchdog timer and RTC clocked by ACLK included. ACLK = VLO.
CPUOFF  = 1, SCG0  = 1, SCG1  = 1, OSCOFF  = 0 (LPM3), fACLK  = fVLO, fMCLK = fSMCLK  = fDCO  = 0 MHz
(7) CPUOFF  = 1, SCG0  = 1, SCG1  = 1, OSCOFF  = 1 (LPM4), fDCO  = fACLK = fMCLK  = fSMCLK  = 0 MHz
(8) Current for brownout, high side supervisor (SVSH) normal mode included. Low-side supervisor (SVSL) and low-side monitor (SVML) disabled. High-side monitor (SVMH) disabled. RAM retention enabled.

5.7 Typical Characteristics – Low-Power Mode Supply Currents

RF430F5978 g_ilpm3_vs_ta_slas740.gif Figure 5-3 LPM3 Supply Current vs Temperature
RF430F5978 g_ilpm4_vs_ta_slas740.gif Figure 5-4 LPM4 Supply Current vs Temperature

5.8 Thermal Resistance Characteristics

over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
JA Junction-to-ambient thermal resistance, still air(1) VQFN-64 (RGC) 24.6 °C/W
JC(TOP) Junction-to-case (top) thermal resistance(2) 8.8 °C/W
JC(BOT) Junction-to-case (bottom) thermal resistance(4) 0.9 °C/W
JB Junction-to-board thermal resistance(3) 3.8 °C/W
ΨJB Junction-to-board thermal characterization parameter 3.8 °C/W
ΨJT Junction-to-top thermal characterization parameter 0.1 °C/W
(1) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, High-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(2) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(4) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

5.9 Digital Inputs

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VIT+ Positive-going input threshold voltage 1.8 V 0.80 1.40 V
3 V 1.50 2.10
VIT– Negative-going input threshold voltage 1.8 V 0.45 1.00 V
3 V 0.75 1.65
Vhys Input voltage hysteresis (VIT+ – VIT–) 1.8 V 0.3 0.8 V
3 V 0.4 1.0
RPull Pullup or pulldown resistor For pullup: VIN = VSS
For pulldown: VIN = VCC
20 35 50
CI Input capacitance VIN = VSS or VCC 5 pF
Ilkg(Px.y) High-impedance leakage current  (1) (2) 1.8 V, 3 V ±50 nA
t(int) External interrupt timing (external trigger pulse duration to set interrupt flag)(3) Ports with interrupt capability (see block diagram and terminal function descriptions). 1.8 V, 3 V 20 ns
(1) The leakage current is measured with VSS or VCC applied to the corresponding pin(s), unless otherwise noted.
(2) The leakage of the digital port pins is measured individually. The port pin is selected for input and the pullup or pulldown resistor is disabled.
(3) An external signal sets the interrupt flag every time the minimum interrupt pulse duration t(int) is met. It may be set by trigger signals shorter than t(int).

5.10 Digital Outputs

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN MAX UNIT
VOH High-level output voltage, reduced drive strength(3) I(OHmax) = –1 mA, PxDS.y = 0(1) 1.8 V VCC – 0.25 VCC V
I(OHmax) = –3 mA, PxDS.y = 0(2) VCC – 0.60 VCC
I(OHmax) = –2 mA, PxDS.y = 0(1) 3 V VCC – 0.25 VCC
I(OHmax) = –6 mA, PxDS.y = 0(2) VCC – 0.60 VCC
VOL Low-level output voltage, reduced drive strength(3) I(OLmax) = 1 mA, PxDS.y = 0(1) 1.8 V VSS VSS + 0.25 V
I(OLmax) = 3 mA, PxDS.y = 0(2) VSS VSS + 0.60
I(OLmax) = 2 mA, PxDS.y = 0(1) 3 V VSS VSS + 0.25
I(OLmax) = 6 mA, PxDS.y = 0(2) VSS VSS + 0.60
VOH High-level output voltage,
full drive strength
I(OHmax) = –3 mA, PxDS.y = 1(1) 1.8 V VCC – 0.25 VCC V
I(OHmax) = –10 mA, PxDS.y = 1(2) VCC – 0.60 VCC
I(OHmax) = –5 mA, PxDS.y = 1(1) 3 V VCC – 0.25 VCC
I(OHmax) = –15 mA, PxDS.y = 1(2) VCC – 0.60 VCC
VOL Low-level output voltage,
full drive strength
I(OLmax) = 3 mA, PxDS.y = 1(1) 1.8 V VSS VSS + 0.25 V
I(OLmax) = 10 mA, PxDS.y = 1(2) VSS VSS + 0.60
I(OLmax) = 5 mA, PxDS.y = 1(1) 3 V VSS VSS + 0.25
I(OLmax) = 15 mA, PxDS.y = 1(2) VSS VSS + 0.60
fPx.y Port output frequency (with load) CL = 20 pF, RL (4) (5) VCC = 1.8 V,
PMMCOREVx = 0
16 MHz
VCC = 3 V,
PMMCOREVx = 2
25
fPort_CLK Clock output frequency CL = 20 pF(5) VCC = 1.8 V,
PMMCOREVx = 0
16 MHz
VCC = 3 V,
PMMCOREVx = 2
25
(1) The maximum total current, I(OHmax) and I(OLmax), for all outputs combined should not exceed ±48 mA to hold the maximum voltage drop specified.
(2) The maximum total current, I(OHmax) and I(OLmax), for all outputs combined should not exceed ±100 mA to hold the maximum voltage drop specified.
(3) Selecting reduced drive strength may reduce EMI.
(4) A resistive divider with 2 × R1 between VCC and VSS is used as load. The output is connected to the center tap of the divider. For full drive strength, R1 = 550 Ω. For reduced drive strength, R1 = 1.6 kΩ. CL = 20 pF is connected to the output to VSS.
(5) The output voltage reaches at least 10% and 90% VCC at the specified toggle frequency.

5.11 Typical Characteristics – Outputs, Reduced Drive Strength (PxDS.y = 0)

RF430F5978 port_char_ol_30_ds0_slas740.gif Figure 5-5 Typical Low-Level Output Current vs Low-Level Output Voltage
RF430F5978 port_char_oh_30_ds0_slas740.gif Figure 5-7 Typical High-Level Output Current vs High-Level Output Voltage
RF430F5978 port_char_ol_18_ds0_slas740.gif Figure 5-6 Typical Low-Level Output Current vs Low-Level Output Voltage
RF430F5978 port_char_oh_18_ds0_slas740.gif Figure 5-8 Typical High-Level Output Current vs High-Level Output Voltage

5.12 Typical Characteristics – Outputs, Full Drive Strength (PxDS.y = 1)

RF430F5978 port_char_ol_30_ds1_slas740.gif Figure 5-9 Typical Low-Level Output Current vs Low-Level Output Voltage
RF430F5978 port_char_oh_30_ds1_slas740.gif Figure 5-11 Typical High-Level Output Current vs High-Level Output Voltage
RF430F5978 port_char_ol_18_ds1_slas740.gif Figure 5-10 Typical Low-Level Output Current vs Low-Level Output Voltage
RF430F5978 port_char_oh_18_ds1_slas740.gif Figure 5-12 Typical High-Level Output Current vs High-Level Output Voltage

5.13 Crystal Oscillator, XT1, Low-Frequency Mode(5)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
ΔIDVCC.LF Differential XT1 oscillator crystal current consumption from lowest drive setting, LF mode fOSC = 32768 Hz, XTS = 0,
XT1BYPASS = 0, XT1DRIVEx = 1,
TA = 25°C
3 V 0.075 µA
fOSC = 32768 Hz, XTS = 0,
XT1BYPASS = 0, XT1DRIVEx = 2,
TA = 25°C
0.170
fOSC = 32768 Hz, XTS = 0,
XT1BYPASS = 0, XT1DRIVEx = 3,
TA = 25°C
0.290
fXT1,LF0 XT1 oscillator crystal frequency, LF mode XTS = 0, XT1BYPASS = 0 32768 Hz
fXT1,LF,SW XT1 oscillator logic-level square-wave input frequency, LF mode XTS = 0, XT1BYPASS = 1(6) (7) 10 32.768 50 kHz
OALF Oscillation allowance for LF crystals(8) XTS = 0,
XT1BYPASS  = 0, XT1DRIVEx  = 0,
fXT1,LF  = 32768 Hz, CL,eff  = 6 pF
210
XTS = 0,
XT1BYPASS  = 0, XT1DRIVEx  = 1,
fXT1,LF  = 32768 Hz, CL,eff  = 12 pF
300
CL,eff Integrated effective load capacitance, LF mode(1) XTS = 0, XCAPx = 0(2) 2 pF
XTS = 0, XCAPx = 1 5.5
XTS = 0, XCAPx = 2 8.5
XTS = 0, XCAPx = 3 12.0
Duty cycle, LF mode XTS = 0, Measured at ACLK,
fXT1,LF  = 32768 Hz
30% 70%
fFault,LF Oscillator fault frequency, LF mode(4) XTS = 0(3) 10 10000 Hz
tSTART,LF Start-up time, LF mode fOSC = 32768 Hz, XTS = 0,
XT1BYPASS = 0, XT1DRIVEx = 0,
TA = 25°C, CL,eff  = 6 pF
3 V 1000 ms
fOSC = 32768 Hz, XTS = 0,
XT1BYPASS = 0, XT1DRIVEx = 3,
TA = 25°C, CL,eff  = 12 pF
500
(1) Includes parasitic bond and package capacitance (approximately 2 pF per pin).
Because the PCB adds additional capacitance, TI recommends verifying the correct load by measuring the ACLK frequency. For a correct setup, the effective load capacitance should always match the specification of the used crystal.
(2) Requires external capacitors at both terminals. Values are specified by crystal manufacturers.
(3) Measured with logic-level input frequency but also applies to operation with crystals.
(4) Frequencies below the MIN specification set the fault flag. Frequencies above the MAX specification do not set the fault flag. Frequencies in between might set the flag.
(5) To improve EMI on the XT1 oscillator, the following guidelines should be observed.
  • Keep the trace between the device and the crystal as short as possible.
  • Design a good ground plane around the oscillator pins.
  • Prevent crosstalk from other clock or data lines into oscillator pins XIN and XOUT.
  • Avoid running PCB traces underneath or adjacent to the XIN and XOUT pins.
  • Use assembly materials and processes that avoid any parasitic load on the oscillator XIN and XOUT pins.
  • If conformal coating is used, make sure that it does not induce capacitive or resistive leakage between the oscillator pins.
(6) When XT1BYPASS is set, XT1 circuits are automatically powered down. Input signal is a digital square wave with parametrics defined in the Schmitt-trigger Inputs section of this datasheet.
(7) Maximum frequency of operation of the entire device cannot be exceeded.
(8) Oscillation allowance is based on a safety factor of 5 for recommended crystals. The oscillation allowance is a function of the XT1DRIVEx settings and the effective load. In general, comparable oscillator allowance can be achieved based on the following guidelines, but should be evaluated based on the actual crystal selected for the application:
  • For XT1DRIVEx = 0, CL,eff ≤ 6 pF
  • For XT1DRIVEx = 1, 6 pF ≤ CL,eff ≤ 9 pF
  • For XT1DRIVEx = 2, 6 pF ≤ CL,eff ≤ 10 pF
  • For XT1DRIVEx = 3, CL,eff ≥ 6 pF

5.14 Internal Very-Low-Power Low-Frequency Oscillator (VLO)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fVLO VLO frequency Measured at ACLK 1.8 V to 3.6 V 6 9.4 14 kHz
dfVLO/dT VLO frequency temperature drift Measured at ACLK(1) 1.8 V to 3.6 V 0.5 %/°C
dfVLO/dVCC VLO frequency supply voltage drift Measured at ACLK(2) 1.8 V to 3.6 V 4 %/V
Duty cycle Measured at ACLK 1.8 V to 3.6 V 40% 50% 60%
(1) Calculated using the box method: (MAX(–40°C to 85°C) – MIN(–40°C to 85°C)) / MIN(–40°C to 85°C) / (85°C – (–40°C))
(2) Calculated using the box method: (MAX(1.8 V to 3.6 V) – MIN(1.8 V to 3.6 V)) / MIN(1.8 V to 3.6 V) / (3.6 V – 1.8 V)

5.15 Internal Reference, Low-Frequency Oscillator (REFO)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
IREFO REFO oscillator current consumption TA = 25°C 1.8 V to 3.6 V 3 µA
fREFO REFO frequency calibrated Measured at ACLK 1.8 V to 3.6 V 32768 Hz
REFO absolute tolerance calibrated Full temperature range 1.8 V to 3.6 V ±3.5%
TA = 25°C 3 V ±1.5%
dfREFO/dT REFO frequency temperature drift Measured at ACLK(1) 1.8 V to 3.6 V 0.01 %/°C
dfREFO/dVCC REFO frequency supply voltage drift Measured at ACLK(2) 1.8 V to 3.6 V 1.0 %/V
Duty cycle Measured at ACLK 1.8 V to 3.6 V 40% 50% 60%
tSTART REFO start-up time 40%/60% duty cycle 1.8 V to 3.6 V 25 µs
(1) Calculated using the box method: (MAX(–40°C to 85°C) – MIN(–40°C to 85°C)) / MIN(–40°C to 85°C) / (85°C – (–40°C))
(2) Calculated using the box method: (MAX(1.8 V to 3.6 V) – MIN(1.8 V to 3.6 V)) / MIN(1.8 V to 3.6 V) / (3.6 V – 1.8 V)

5.16 DCO Frequency

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fDCO(0,0) DCO frequency (0, 0)(1) DCORSELx = 0, DCOx = 0, MODx = 0 0.07 0.20 MHz
fDCO(0,31) DCO frequency (0, 31)(1) DCORSELx = 0, DCOx = 31, MODx = 0 0.70 1.70 MHz
fDCO(1,0) DCO frequency (1, 0)(1) DCORSELx = 1, DCOx = 0, MODx = 0 0.15 0.36 MHz
fDCO(1,31) DCO frequency (1, 31)(1) DCORSELx = 1, DCOx = 31, MODx = 0 1.47 3.45 MHz
fDCO(2,0) DCO frequency (2, 0)(1) DCORSELx = 2, DCOx = 0, MODx = 0 0.32 0.75 MHz
fDCO(2,31) DCO frequency (2, 31)(1) DCORSELx = 2, DCOx = 31, MODx = 0 3.17 7.38 MHz
fDCO(3,0) DCO frequency (3, 0)(1) DCORSELx = 3, DCOx = 0, MODx = 0 0.64 1.51 MHz
fDCO(3,31) DCO frequency (3, 31)(1) DCORSELx = 3, DCOx = 31, MODx = 0 6.07 14.0 MHz
fDCO(4,0) DCO frequency (4, 0)(1) DCORSELx = 4, DCOx = 0, MODx = 0 1.3 3.2 MHz
fDCO(4,31) DCO frequency (4, 31)(1) DCORSELx = 4, DCOx = 31, MODx = 0 12.3 28.2 MHz
fDCO(5,0) DCO frequency (5, 0)(1) DCORSELx = 5, DCOx = 0, MODx = 0 2.5 6.0 MHz
fDCO(5,31) DCO frequency (5, 31)(1) DCORSELx = 5, DCOx = 31, MODx = 0 23.7 54.1 MHz
fDCO(6,0) DCO frequency (6, 0)(1) DCORSELx = 6, DCOx = 0, MODx = 0 4.6 10.7 MHz
fDCO(6,31) DCO frequency (6, 31)(1) DCORSELx = 6, DCOx = 31, MODx = 0 39.0 88.0 MHz
fDCO(7,0) DCO frequency (7, 0)(1) DCORSELx = 7, DCOx = 0, MODx = 0 8.5 19.6 MHz
fDCO(7,31) DCO frequency (7, 31)(1) DCORSELx = 7, DCOx = 31, MODx = 0 60 135 MHz
SDCORSEL Frequency step between range DCORSEL and DCORSEL + 1 SRSEL = fDCO(DCORSEL+1,DCO)/fDCO(DCORSEL,DCO) 1.2 2.3 ratio
SDCO Frequency step between tap DCO and DCO + 1 SDCO = fDCO(DCORSEL,DCO+1)/fDCO(DCORSEL,DCO) 1.02 1.12 ratio
Duty cycle Measured at SMCLK 40% 50% 60%
dfDCO/dT DCO frequency temperature drift fDCO = 1 MHz 0.1 %/°C
dfDCO/dVCC DCO frequency voltage drift fDCO = 1 MHz 1.9 %/V
(1) When selecting the proper DCO frequency range (DCORSELx), the target DCO frequency, fDCO, should be set to reside within the range of fDCO(n, 0),MAX ≤ fDCO ≤ fDCO(n, 31),MIN, where fDCO(n, 0),MAX represents the maximum frequency specified for the DCO frequency, range n, tap 0 (DCOx = 0) and fDCO(n,31),MIN represents the minimum frequency specified for the DCO frequency, range n, tap 31 (DCOx = 31). This ensures that the target DCO frequency resides within the range selected. It should also be noted that if the actual fDCO frequency for the selected range causes the FLL or the application to select tap 0 or 31, the DCO fault flag is set to report that the selected range is at its minimum or maximum tap setting.
RF430F5978 typ_dco_freq_slas740.gif Figure 5-13 Typical DCO frequency

5.17 PMM, Brown-Out Reset (BOR)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(DVCC_BOR_IT–) BORH on voltage, DVCC falling level | dDVCC/dt | < 3 V/s 1.45 V
V(DVCC_BOR_IT+) BORH off voltage, DVCC rising level | dDVCC/dt | < 3 V/s 0.80 1.30 1.50 V
V(DVCC_BOR_hys) BORH hysteresis 60 250 mV
tRESET Pulse duration required at RST/NMI pin to accept a reset 2 µs

5.18 PMM, Core Voltage

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCORE3(AM) Core voltage, active mode, PMMCOREV = 3 2.4 V ≤ DVCC ≤ 3.6 V 1.90 V
VCORE2(AM) Core voltage, active mode, PMMCOREV = 2 2.2 V ≤ DVCC ≤ 3.6 V 1.80 V
VCORE1(AM) Core voltage, active mode, PMMCOREV = 1 2 V ≤ DVCC ≤ 3.6 V 1.60 V
VCORE0(AM) Core voltage, active mode, PMMCOREV = 0 1.8 V ≤ DVCC ≤ 3.6 V 1.40 V
VCORE3(LPM) Core voltage, low-current mode, PMMCOREV = 3 2.4 V ≤ DVCC ≤ 3.6 V 1.94 V
VCORE2(LPM) Core voltage, low-current mode, PMMCOREV = 2 2.2 V ≤ DVCC ≤ 3.6 V 1.84 V
VCORE1(LPM) Core voltage, low-current mode, PMMCOREV = 1 2 V ≤ DVCC ≤ 3.6 V 1.64 V
VCORE0(LPM) Core voltage, low-current mode, PMMCOREV = 0 1.8 V ≤ DVCC ≤ 3.6 V 1.44 V

5.19 PMM, SVS High Side

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I(SVSH) SVS current consumption SVSHE = 0, DVCC = 3.6 V 0 nA
SVSHE = 1, DVCC = 3.6 V, SVSHFP = 0 200
SVSHE = 1, DVCC = 3.6 V, SVSHFP = 1 1.5 µA
V(SVSH_IT–) SVSH on voltage level(1) SVSHE = 1, SVSHRVL = 0 1.53 1.60 1.67 V
SVSHE = 1, SVSHRVL = 1 1.73 1.80 1.87
SVSHE = 1, SVSHRVL = 2 1.93 2.00 2.07
SVSHE = 1, SVSHRVL = 3 2.03 2.10 2.17
V(SVSH_IT+) SVSH off voltage level(1) SVSHE = 1, SVSMHRRL = 0 1.60 1.70 1.80 V
SVSHE = 1, SVSMHRRL = 1 1.80 1.90 2.00
SVSHE = 1, SVSMHRRL = 2 2.00 2.10 2.20
SVSHE = 1, SVSMHRRL = 3 2.10 2.20 2.30
SVSHE = 1, SVSMHRRL = 4 2.25 2.35 2.50
SVSHE = 1, SVSMHRRL = 5 2.52 2.65 2.78
SVSHE = 1, SVSMHRRL = 6 2.85 3.00 3.15
SVSHE = 1, SVSMHRRL = 7 2.85 3.00 3.15
tpd(SVSH) SVSH propagation delay SVSHE = 1, dVDVCC/dt = 10 mV/µs,
SVSHFP = 1
2.5 µs
SVSHE = 1, dVDVCC/dt = 1 mV/µs,
SVSHFP = 0
20
t(SVSH) SVSH on or off delay time SVSHE = 0 → 1, dVDVCC/dt = 10 mV/µs,
SVSHFP = 1
12.5 µs
SVSHE = 0 → 1, dVDVCC/dt = 1 mV/µs,
SVSHFP = 0
100
dVDVCC/dt DVCC rise time 0 1000 V/s
(1) The SVSH settings available depend on the VCORE (PMMCOREVx) setting. See the Power Management Module and Supply Voltage Supervisor chapter in the RF430F5978 User's Guide (SLAU378) on recommended settings and usage.

5.20 PMM, SVM High Side

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I(SVMH) SVMH current consumption SVMHE = 0, DVCC = 3.6 V 0 nA
SVMHE = 1, DVCC = 3.6 V, SVMHFP = 0 200
SVMHE = 1, DVCC = 3.6 V, SVMHFP = 1 1.5 µA
V(SVMH) SVMH on or off voltage level(1) SVMHE = 1, SVSMHRRL = 0 1.60 1.70 1.80 V
SVMHE = 1, SVSMHRRL = 1 1.80 1.90 2.00
SVMHE = 1, SVSMHRRL = 2 2.00 2.10 2.20
SVMHE = 1, SVSMHRRL = 3 2.10 2.20 2.30
SVMHE = 1, SVSMHRRL = 4 2.25 2.35 2.50
SVMHE = 1, SVSMHRRL = 5 2.52 2.65 2.78
SVMHE = 1, SVSMHRRL = 6 2.85 3.00 3.15
SVMHE = 1, SVSMHRRL = 7 2.85 3.00 3.15
SVMHE = 1, SVMHOVPE = 1 3.75
tpd(SVMH) SVMH propagation delay SVMHE = 1, dVDVCC/dt = 10 mV/µs,
SVMHFP = 1
2.5 µs
SVMHE = 1, dVDVCC/dt = 1 mV/µs,
SVMHFP = 0
20
t(SVMH) SVMH on or off delay time SVMHE = 0 → 1, dVDVCC/dt = 10 mV/µs,
SVMHFP = 1
12.5 µs
SVMHE = 0 → 1, dVDVCC/dt = 1 mV/µs,
SVMHFP = 0
100
(1) The SVMH settings available depend on the VCORE (PMMCOREVx) setting. See the Power Management Module and Supply Voltage Supervisor chapter in the RF430F5978 User's Guide (SLAU378) on recommended settings and usage.

5.21 PMM, SVS Low Side

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I(SVSL) SVSL current consumption SVSLE = 0, PMMCOREV = 2 0 nA
SVSLE = 1, PMMCOREV = 2, SVSLFP = 0 200
SVSLE = 1, PMMCOREV = 2, SVSLFP = 1 1.5 µA
tpd(SVSL) SVSL propagation delay SVSLE = 1, dVCORE/dt = 10 mV/µs,
SVSLFP = 1
2.5 µs
SVSLE = 1, dVCORE/dt = 1 mV/µs,
SVSLFP = 0
20
t(SVSL) SVSL on or off delay time SVSLE = 0 → 1, dVCORE/dt = 10 mV/µs,
SVSLFP = 1
12.5 µs
SVSLE = 0 → 1, dVCORE/dt = 1 mV/µs,
SVSLFP = 0
100

5.22 PMM, SVM Low Side

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I(SVML) SVML current consumption SVMLE = 0, PMMCOREV = 2 0 nA
SVMLE = 1, PMMCOREV = 2, SVMLFP = 0 200
SVMLE = 1, PMMCOREV = 2, SVMLFP = 1 1.5 µA
tpd(SVML) SVML propagation delay SVMLE = 1, dVCORE/dt = 10 mV/µs,
SVMLFP = 1
2.5 µs
SVMLE = 1, dVCORE/dt = 1 mV/µs,
SVMLFP = 0
20
t(SVML) SVML on or off delay time SVMLE = 0 → 1, dVCORE/dt = 10 mV/µs,
SVMLFP = 1
12.5 µs
SVMLE = 0 → 1, dVCORE/dt = 1 mV/µs,
SVMLFP = 0
100

5.23 Wake-up Times From Low-Power Modes and Reset

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tWAKE-UP-FAST Wake-up time from LPM2, LPM3, or LPM4 to active mode(1) PMMCOREV = SVSMLRRL = n
(where n = 0, 1, 2, or 3),
SVSLFP = 1
fMCLK ≥ 4.0 MHz 5 µs
fMCLK < 4.0 MHz 6
tWAKE-UP-SLOW Wake-up time from LPM2, LPM3 or LPM4 to active mode(2) PMMCOREV = SVSMLRRL = n
(where n = 0, 1, 2, or 3),
SVSLFP = 0
150 165 µs
tWAKE-UP-RESET Wake-up time from RST or BOR event to active mode(3) 2 3 ms
(1) This value represents the time from the wake-up event to the first active edge of MCLK. The wake-up time depends on the performance mode of the low-side supervisor (SVSL) and low-side monitor (SVML). Fastest wake-up times are possible with SVSL and SVML in full performance mode or disabled when operating in AM, LPM0, and LPM1. Various options are available for SVSL and SVML while operating in LPM2, LPM3, and LPM4. See the Power Management Module and Supply Voltage Supervisor chapter in the RF430F5978 User's Guide (SLAU378).
(2) This value represents the time from the wake-up event to the first active edge of MCLK. The wake-up time depends on the performance mode of the low-side supervisor (SVSL) and low-side monitor (SVML). In this case, the SVSL and SVML are in normal mode (low current) mode when operating in AM, LPM0, and LPM1. Various options are available for SVSL and SVML while operating in LPM2, LPM3, and LPM4. See the Power Management Module and Supply Voltage Supervisor chapter in the RF430F5978 User's Guide (SLAU378).
(3) This value represents the time from the wake-up event to the reset vector execution.

5.24 Timer_A

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN MAX UNIT
fTA Timer_A input clock frequency Internal: SMCLK, ACLK
External: TACLK
Duty cycle = 50% ±10%
1.8 V, 3 V 25 MHz
tTA,cap Timer_A capture timing All capture inputs, Minimum pulse duration required for capture 1.8 V, 3 V 20 ns

5.25 USCI (UART Mode) Clock Frequency

PARAMETER CONDITIONS MIN MAX UNIT
fUSCI USCI input clock frequency Internal: SMCLK, ACLK
External: UCLK
Duty cycle = 50% ±10%
fSYSTEM MHz
fBITCLK BITCLK clock frequency
(equals baud rate in MBaud)
1 MHz

5.26 USCI (UART Mode)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER VCC MIN TYP MAX UNIT
tτ UART receive deglitch time(1) 2.2 V 50 600 ns
3 V 50 600
(1) Pulses on the UART receive input (UCxRX) shorter than the UART receive deglitch time are suppressed. To ensure that pulses are correctly recognized, their duration should exceed the maximum specification of the deglitch time.

5.27 USCI (SPI Master Mode) Clock Frequency

PARAMETER CONDITIONS MIN MAX UNIT
fUSCI USCI input clock frequency Internal: SMCLK, ACLK
Duty cycle = 50% ±10%
fSYSTEM MHz

5.28 USCI (SPI Master Mode)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
(see Figure 5-14 and Figure 5-15)
PARAMETER TEST CONDITIONS PMMCOREVx VCC MIN MAX UNIT
tSU,MI SOMI input data setup time 0 1.8 V 55 ns
3 V 38
3 2.4 V 30
3 V 25
tHD,MI SOMI input data hold time 0 1.8 V 0 ns
3 V 0
3 2.4 V 0
3 V 0
tVALID,MO SIMO output data valid time(2) UCLK edge to SIMO valid,
CL = 20 pF
0 1.8 V 20 ns
3 V 18
3 2.4 V 16
3 V 15
tHD,MO SIMO output data hold time(3) CL = 20 pF 0 1.8 V –10 ns
3 V –8
3 2.4 V –10
3 V –8
(1) fUCxCLK = 1/2tLO/HI with tLO/HI ≥ max(tVALID,MO(USCI) + tSU,SI(Slave), tSU,MI(USCI) + tVALID,SO(Slave)).
For the slave parameters tSU,SI(Slave) and tVALID,SO(Slave), see the SPI parameters of the attached slave.
(2) Specifies the time to drive the next valid data to the SIMO output after the output changing UCLK clock edge. See the timing diagrams in Figure 5-14 and Figure 5-15.
(3) Specifies how long data on the SIMO output is valid after the output changing UCLK clock edge. Negative values indicate that the data on the SIMO output can become invalid before the output changing clock edge observed on UCLK. See the timing diagrams in Figure 5-14 and Figure 5-15.
RF430F5978 spi_mst_ckph0_slas740.gif Figure 5-14 SPI Master Mode, CKPH = 0
RF430F5978 spi_mst_ckph1_slas740.gif Figure 5-15 SPI Master Mode, CKPH = 1

5.29 USCI (SPI Slave Mode)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
(see Figure 5-16 and Figure 5-17)
PARAMETER TEST CONDITIONS PMMCOREVx VCC MIN MAX UNIT
tSTE,LEAD STE lead time, STE low to clock 0 1.8 V 11 ns
3 V 8
3 2.4 V 7
3 V 6
tSTE,LAG STE lag time, Last clock to STE high 0 1.8 V 3 ns
3 V 3
3 2.4 V 3
3 V 3
tSTE,ACC STE access time, STE low to SOMI data out 0 1.8 V 66 ns
3 V 50
3 2.4 V 36
3 V 30
tSTE,DIS STE disable time, STE high to SOMI high impedance 0 1.8 V 30 ns
3 V 23
3 2.4 V 16
3 V 13
tSU,SI SIMO input data setup time 0 1.8 V 5 ns
3 V 5
3 2.4 V 2
3 V 2
tHD,SI SIMO input data hold time 0 1.8 V 5 ns
3 V 5
3 2.4 V 5
3 V 5
tVALID,SO SOMI output data valid time(2) UCLK edge to SOMI valid,
CL = 20 pF
0 1.8 V 76 ns
3 V 60
3 2.4 V 44
3 V 40
tHD,SO SOMI output data hold time(3) CL = 20 pF 0 1.8 V 18 ns
3 V 12
3 2.4 V 10
3 V 8
(1) fUCxCLK = 1/2tLO/HI with tLO/HI ≥ max(tVALID,MO(Master) + tSU,SI(USCI), tSU,MI(Master) + tVALID,SO(USCI)).
For the master parameters tSU,MI(Master) and tVALID,MO(Master), see the SPI parameters of the attached master.
(2) Specifies the time to drive the next valid data to the SOMI output after the output changing UCLK clock edge. See the timing diagrams in Figure 5-16 and Figure 5-17.
(3) Specifies how long data on the SOMI output is valid after the output changing UCLK clock edge. See the timing diagrams in Figure 5-16 and Figure 5-17.
RF430F5978 spi_slv_ckph0_slas740.gif Figure 5-16 SPI Slave Mode, CKPH = 0
RF430F5978 spi_slv_ckph1_slas740.gif Figure 5-17 SPI Slave Mode, CKPH = 1

5.30 USCI (I2C Mode)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5-18)
PARAMETER TEST CONDITIONS VCC MIN MAX UNIT
fUSCI USCI input clock frequency Internal: SMCLK, ACLK
External: UCLK
Duty cycle = 50% ±10%
fSYSTEM MHz
fSCL SCL clock frequency 2.2 V, 3 V 0 400 kHz
tHD,STA Hold time (repeated) START fSCL ≤ 100 kHz 2.2 V, 3 V 4.0 µs
fSCL > 100 kHz 0.6
tSU,STA Setup time for a repeated START fSCL ≤ 100 kHz 2.2 V, 3 V 4.7 µs
fSCL > 100 kHz 0.6
tHD,DAT Data hold time 2.2 V, 3 V 0 ns
tSU,DAT Data setup time 2.2 V, 3 V 250 ns
tSU,STO Setup time for STOP fSCL ≤ 100 kHz 2.2 V, 3 V 4.0 µs
fSCL > 100 kHz 0.6
tSP Pulse duration of spikes suppressed by input filter 2.2 V 50 600 ns
3 V 50 600
RF430F5978 timing_i2c_slas740.gif Figure 5-18 I2C Mode Timing

5.31 12-Bit ADC, Power Supply and Input Range Conditions

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
AVCC Analog supply voltage,
Full performance
AVCC and DVCC are connected together,
AVSS and DVSS are connected together,
V(AVSS) = V(DVSS) = 0 V
2.2 3.6 V
V(Ax) Analog input voltage range(2) All ADC12 analog input pins Ax 0 AVCC V
IADC12_A Operating supply current into AVCC terminal(3) fADC12CLK = 5.0 MHz, ADC12ON = 1,
REFON = 0, SHT0 = 0, SHT1 = 0, ADC12DIV  = 0
2.2 V 125 155 µA
3 V 150 220
CI Input capacitance Only one terminal Ax can be selected at one time 2.2 V 20 25 pF
RI Input MUX ON resistance 0 V ≤ VAx ≤ AVCC 10 200 1900 Ω
(1) The leakage current is specified by the digital I/O input leakage.
(2) The analog input voltage range must be within the selected reference voltage range VR+ to VR– for valid conversion results. If the reference voltage is supplied by an external source or if the internal reference voltage is used and REFOUT = 1, then decoupling capacitors are required. See Section 5.35 and Section 5.36.
(3) The internal reference supply current is not included in current consumption parameter IADC12_A.

5.32 12-Bit ADC, Timing Parameters

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
fADC12CLK For specified performance of ADC12 linearity parameters 2.2 V, 3 V 0.45 4.8 5.4 MHz
fADC12OSC Internal ADC12 oscillator(3) ADC12DIV = 0, fADC12CLK = fADC12OSC 2.2 V, 3 V 4.2 4.8 5.4 MHz
tCONVERT Conversion time REFON = 0, Internal oscillator,
fADC12OSC = 4.2 MHz to 5.4 MHz
2.2 V, 3 V 2.4 3.1 µs
External fADC12CLK from ACLK, MCLK or SMCLK, ADC12SSEL ≠ 0  (2)
tSample Sampling time RS = 400 Ω, RI = 1000 Ω, CI = 30 pF,
τ = [RS + RI] × CI (1)
2.2 V, 3 V 1000 ns
(1) Approximately ten Tau (τ) are needed to get an error of less than ±0.5 LSB:
tSample = ln(2n+1) x (RS + RI) × CI + 800 ns, where n = ADC resolution = 12, RS = external source resistance
(2) 13 × ADC12DIV × 1/fADC12CLK
(3) The ADC12OSC is sourced directly from MODOSC inside the UCS.

5.33 12-Bit ADC, Linearity Parameters

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
EI Integral linearity error (INL) 1.4 V ≤ (VeREF+ – VREF–/VeREF–)min ≤ 1.6 V 2.2 V, 3 V ±2 LSB
1.6 V < (VeREF+ – VREF–/VeREF–)min ≤ VAVCC ±1.7
ED Differential linearity error (DNL) (VeREF+ – VREF–/VeREF–)min ≤ (VeREF+ – VREF–/VeREF–),
CVREF+ = 20 pF
2.2 V, 3 V ±1.0 LSB
EO Offset error (VeREF+ – VREF–/VeREF–)min ≤ (VeREF+ – VREF–/VeREF–),
Internal impedance of source RS < 100 Ω, CVREF+ = 20 pF
2.2 V, 3 V ±1.0 ±2.0 LSB
EG Gain error (VeREF+ – VREF–/VeREF–)min ≤ (VeREF+ – VREF–/VeREF–),
CVREF+ = 20 pF
2.2 V, 3 V ±1.0 ±2.0 LSB
ET Total unadjusted error (VeREF+ – VREF–/VeREF–)min ≤ (VeREF+ – VREF–/VeREF–),
CVREF+ = 20 pF
2.2 V, 3 V ±1.4 ±3.5 LSB

5.34 12-Bit ADC, Temperature Sensor and Built-In VMID (1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VSENSOR See (2) (3) ADC12ON = 1, INCH = 0Ah,
TA = 0°C
2.2 V 680 mV
3 V 680
TCSENSOR See (3) ADC12ON = 1, INCH = 0Ah 2.2 V 2.25 mV/°C
3 V 2.25
tSENSOR(sample) Sample time required if channel 10 is selected(4) ADC12ON = 1, INCH = 0Ah,
Error of conversion result ≤1 LSB
2.2 V 100 µs
3 V 100
VMID AVCC divider at channel 11, VAVCC factor ADC12ON = 1, INCH = 0Bh 0.48 0.5 0.52 VAVCC
AVCC divider at channel 11 ADC12ON = 1, INCH = 0Bh 2.2 V 1.06 1.1 1.14 V
3 V 1.44 1.5 1.56
tVMID(sample) Sample time required if channel 11 is selected(5) ADC12ON = 1, INCH = 0Bh,
Error of conversion result ≤1 LSB
2.2 V, 3 V 1000 ns
(1) The temperature sensor is provided by the REF module. See the REF module parametric, IREF+, regarding the current consumption of the temperature sensor.
(2) The temperature sensor offset can be significant. TI recommends a single-point calibration to minimize the offset error of the built-in temperature sensor.
(3) The device descriptor structure contains calibration values for 30°C ±3°C and 85°C ±3°C for each of the available reference voltage levels. The sensor voltage can be computed as VSENSE = TCSENSOR * (Temperature, °C) + VSENSOR, where TCSENSOR and VSENSOR can be computed from the calibration values for higher accuracy.
(4) The typical equivalent impedance of the sensor is 51 kΩ. The sample time required includes the sensor-on time tSENSOR(on).
(5) The on-time tVMID(on) is included in the sampling time tVMID(sample); no additional on time is needed.
RF430F5978 vtemp_vs_temp_slas740.gif Figure 5-19 Typical Temperature Sensor Voltage

5.35 REF, External Reference

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VeREF+ Positive external reference voltage input VeREF+ > VREF–/VeREF– (2) 1.4 AVCC V
VREF–/VeREF– Negative external reference voltage input VeREF+ > VREF–/VeREF– (3) 0 1.2 V
(VeREF+ –
VREF–/VeREF–)
Differential external reference voltage input VeREF+ > VREF–/VeREF– (4) 1.4 AVCC V
IVeREF+
IVREF-/VeREF–
Static input current 1.4 V ≤ VeREF+ ≤ VAVCC,
VeREF–  = 0 V,
fADC12CLK = 5 MHz,
ADC12SHTx = 1h,
Conversion rate 200ksps
2.2 V, 3 V ±8.5 ±26 µA
1.4 V ≤ VeREF+ ≤ VAVCC,
VeREF–  = 0 V
fADC12CLK = 5 MHz,
ADC12SHTx = 8h,
Conversion rate 20 ksps
2.2 V, 3 V ±1
CVREF± Capacitance at VREF+ or VREF- terminal, external reference(5) 10 µF
(1) The external reference is used during ADC conversion to charge and discharge the capacitance array. The input capacitance, Ci, is also the dynamic load for an external reference during conversion. The dynamic impedance of the reference supply should follow the recommendations on analog-source impedance to allow the charge to settle for 12-bit accuracy.
(2) The accuracy limits the minimum positive external reference voltage. Lower reference voltage levels may be applied with reduced accuracy requirements.
(3) The accuracy limits the maximum negative external reference voltage. Higher reference voltage levels may be applied with reduced accuracy requirements.
(4) The accuracy limits minimum external differential reference voltage. Lower differential reference voltage levels may be applied with reduced accuracy requirements.
(5) Two decoupling capacitors, 10 µF and 100 nF, should be connected to VREF to decouple the dynamic current required for an external reference source if it is used for the ADC12_A. See also the RF430F5978 User's Guide (SLAU378).

5.36 REF, Built-In Reference

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VREF+ Positive built-in reference voltage output REFVSEL = 2 for 2.5 V,
REFON = REFOUT = 1,
IVREF+ = 0 A
3 V 2.41 ±1.5% V
REFVSEL = 1 for 2 V,
REFON = REFOUT = 1,
IVREF+ = 0 A
3 V 1.93 ±1.5%
REFVSEL = 0 for 1.5 V,
REFON = REFOUT = 1,
IVREF+ = 0 A
2.2 V, 3 V 1.45 ±1.5%
AVCC(min) AVCC minimum voltage, Positive built-in reference active REFVSEL = 0 for 1.5 V, reduced performance 1.8 V
REFVSEL = 0 for 1.5 V 2.2
REFVSEL = 1 for 2 V 2.3
REFVSEL = 2 for 2.5 V 2.8
IREF+ Operating supply current into AVCC terminal(2) (3) REFON = 1, REFOUT = 0, REFBURST = 0 3 V 100 140 µA
REFON = 1, REFOUT = 1, REFBURST = 0 3 V 0.9 1.5 mA
IL(VREF+) Load-current regulation, VREF+ terminal(4) REFVSEL = (0, 1, or 2),
IVREF+ = +10 µA/–1000 µA,
AVCC = AVCC (min) for each reference level,
REFVSEL = (0, 1, or 2),
REFON = REFOUT = 1
2500 µV/mA
CVREF± Capacitance at VREF+ and VREF- terminals, internal reference REFON = REFOUT = 1 20 100 pF
TCREF+ Temperature coefficient of built-in reference(5) IVREF+ = 0 A,
REFVSEL = (0, 1, or 2),
REFON = 1, REFOUT = 0 or 1
30 50 ppm/ °C
PSRR_DC Power supply rejection ratio (DC) AVCC = AVCC (min) to AVCC(max),
TA = 25°C, REFVSEL = (0, 1, or 2),
REFON = 1, REFOUT = 0 or 1
120 300 µV/V
PSRR_AC Power supply rejection ratio (AC) AVCC = AVCC (min) to AVCC(max)
TA = 25°C, f = 1 kHz, ΔVpp = 100 mV,
REFVSEL = 0, 1, or 2,
REFON = 1, REFOUT = 0 or 1
6.4 mV/V
tSETTLE Settling time of reference voltage(6) AVCC = AVCC (min) to AVCC(max),
REFVSEL = (0, 1, or 2),
REFOUT = 0, REFON = 0 → 1
75 µs
AVCC = AVCC (min) to AVCC(max),
CVREF = CVREF(max),
REFVSEL = (0, 1, or 2),
REFOUT = 1, REFON = 0 → 1
75
(1) The reference is supplied to the ADC by the REF module and is buffered locally inside the ADC. The ADC uses two internal buffers, one smaller and one larger for driving the VREF+ terminal. When REFOUT = 1, the reference is available at the VREF+ terminal, as well as, used as the reference for the conversion and utilizes the larger buffer. When REFOUT = 0, the reference is only used as the reference for the conversion and utilizes the smaller buffer.
(2) The internal reference current is supplied through the AVCC terminal. Consumption is independent of the ADC12ON control bit, unless a conversion is active. The REFON bit enables to settle the built-in reference before starting an A/D conversion. REFOUT = 0 represents the current contribution of the smaller buffer. REFOUT = 1 represents the current contribution of the larger buffer without external load.
(3) The temperature sensor is provided by the REF module. Its current is supplied through the AVCC terminal and is equivalent to IREF+ with REFON = 1 and REFOUT = 0.
(4) Contribution only due to the reference and buffer including package. This does not include resistance due to PCB trace, etc.
(5) Calculated using the box method: (MAX(–40°C to 85°C) – MIN(–40°C to 85°C)) / MIN(–40°C to 85°C)/(85°C – (–40°C)).
(6) The condition is that the error in a conversion started after tREFON is less than ±0.5 LSB. The settling time depends on the external capacitive load when REFOUT = 1.

5.37 Comparator B

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VCC Supply voltage 1.8 3.6 V
IAVCC_COMP Comparator operating supply current into AVCC, Excludes reference resistor ladder CBPWRMD = 00 1.8 V 40 µA
2.2 V 30 50
3 V 40 65
CBPWRMD = 01 2.2 V, 3 V 10 30
CBPWRMD = 10 2.2 V, 3 V 0.1 0.5
IAVCC_REF Quiescent current of local reference voltage amplifier into AVCC CBREFACC = 1, CBREFLx = 01 22 µA
VIC Common mode input range 0 VCC–1 V
VOFFSET Input offset voltage CBPWRMD = 00 ±20 mV
CBPWRMD = 01, 10 ±10
CIN Input capacitance 5 pF
RSIN Series input resistance ON - switch closed 3 4
OFF - switch opened 30
tPD Propagation delay, response time CBPWRMD = 00, CBF = 0 450 ns
CBPWRMD = 01, CBF = 0 600
CBPWRMD = 10, CBF = 0 50 µs
tPD,filter Propagation delay with filter active CBPWRMD = 00, CBON = 1,
CBF = 1, CBFDLY = 00
0.35 0.6 1.0 µs
CBPWRMD = 00, CBON = 1,
CBF = 1, CBFDLY = 01
0.6 1.0 1.8
CBPWRMD = 00, CBON = 1,
CBF = 1, CBFDLY = 10
1.0 1.8 3.4
CBPWRMD = 00, CBON = 1,
CBF = 1, CBFDLY = 11
1.8 3.4 6.5
tEN_CMP Comparator enable time, settling time CBON = 0 to CBON = 1,
CBPWRMD = 00, 01, 10
1 2 µs
tEN_REF Resistor reference enable time CBON = 0 to CBON = 1 0.3 1.5 µs
VCB_REF Reference voltage for a given tap VIN = reference into resistor ladder,
n = 0 to 31
VIN × (n + 1) / 32 V

5.38 Flash Memory

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TJ MIN TYP MAX UNIT
DVCC(PGM/ERASE) Program and erase supply voltage 1.8 3.6 V
IPGM Average supply current from DVCC during program 3 5 mA
IERASE Average supply current from DVCC during erase 2 6.5 mA
IMERASE, IBANK Average supply current from DVCC during mass erase or bank erase 2 6.5 mA
tCPT Cumulative program time(1) 16 ms
Program and erase endurance 104 105 cycles
tRetention Data retention duration 25°C 100 years
tWord Word or byte program time(2) 64 85 µs
tBlock, 0 Block program time for first byte or word(2) 49 65 µs
tBlock, 1–(N–1) Block program time for each additional byte or word, except for last byte or word(2) 37 49 µs
tBlock, N Block program time for last byte or word(2) 55 73 µs
tErase Erase time for segment erase, mass erase, and bank erase when available(2) 23 32 ms
fMCLK,MRG MCLK frequency in marginal read mode
(FCTL4.MRG0 = 1 or FCTL4. MRG1 = 1)
0 1 MHz
(1) The cumulative program time must not be exceeded when writing to a 128-byte flash block. This parameter applies to all programming methods: individual word or byte write and block write modes.
(2) These values are hardwired into the state machine of the flash controller.

5.39 JTAG and Spy-Bi-Wire Interface

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER VCC MIN TYP MAX UNIT
fSBW Spy-Bi-Wire input frequency 2.2 V, 3 V 0 20 MHz
tSBW,Low Spy-Bi-Wire low clock pulse duration 2.2 V, 3 V 0.025 15 µs
tSBW, En Spy-Bi-Wire enable time (TEST high to acceptance of first clock edge)(1) 2.2 V, 3 V 1 µs
tSBW,Rst Spy-Bi-Wire return to normal operation time 15 100 µs
fTCK TCK input frequency to 4-wire JTAG(2) 2.2 V 0 5 MHz
3 V 0 10 MHz
Rinternal Internal pulldown resistance on TEST 2.2 V, 3 V 45 60 80
(1) Tools that access the Spy-Bi-Wire interface must wait for the minimum tSBW,En time after pulling the TEST/SBWTCK pin high before applying the first SBWTCK clock edge.
(2) fTCK may be restricted to meet the timing requirements of the module selected.

5.40 RF1A CC1101 Radio Parameters

Table 5-1 Recommended Operating Conditions

MIN NOM MAX UNIT
VCC Supply voltage range during radio operation 2.0 3.6 V
PMMCOREVx Core voltage range, PMMCOREVx setting during radio operation 2 3
RF frequency range 300 348 MHz
389(1) 464
779 928
Data rate 2-FSK 0.6 500 kBaud
2-GFSK, OOK, and ASK 0.6 250
(Shaped) MSK (also known as differential offset QPSK)(2) 26 500
RF crystal frequency 26 26 27 MHz
RF crystal tolerance Total tolerance including initial tolerance, crystal loading, aging and temperature dependency.(3) ±40 ppm
RF crystal load capacitance 10 13 20 pF
RF crystal effective series resistance 100 Ω
(1) If using a 27-MHz crystal, the lower frequency limit for this band is 392 MHz.
(2) If using optional Manchester encoding, the data rate in kbps is half the baud rate.
(3) The acceptable crystal tolerance depends on frequency band, channel bandwidth, and spacing. Also see design note DN005 -- CC11xx Sensitivity versus Frequency Offset and Crystal Accuracy (SWRA122).

5.40.1 RF Crystal Oscillator, XT2

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
PARAMETER MIN TYP MAX UNIT
Start-up time(1) 150 810 µs
Duty cycle 45% 50% 55%
(1) The start-up time depends to a very large degree on the crystal that is used.

5.40.2 Current Consumption, Reduced-Power Modes

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Current consumption RF crystal oscillator only(3) 100 µA
IDLE state (including RF crystal oscillator) 1.7 mA
FSTXON state (only the frequency synthesizer is running)(2) 9.5 mA
(1) All measurement results are obtained using the EM430F6137RF900 with BOM according to tested frequency range.
(2) This current consumption is also representative of other intermediate states when going from IDLE to RX or TX, including the calibration state.
(3) To measure the current, follow this sequence:
  1. Enable XT2 with XOSC_FORCE_ON = 1.
  2. Set radio to sleep mode.
  3. Disable XT2 clock requests from any module.

5.40.3 Current Consumption, Receive Mode

TA = 25°C, VCC = 3 V (unless otherwise noted)(1) (1)
PARAMETER FREQ (MHz) DATA RATE (kBaud) TEST CONDITIONS MIN TYP MAX UNIT
Current consumption, RX 315 1.2 Register settings optimized for reduced current Input at –100 dBm (close to sensitivity limit) 17 mA
Input at –40 dBm (well above sensitivity limit) 16
38.4 Input at –100 dBm (close to sensitivity limit) 17
Input at –40 dBm (well above sensitivity limit) 16
250 Input at –100 dBm (close to sensitivity limit) 18
Input at –40 dBm (well above sensitivity limit) 16.5
433 1.2 Register settings optimized for reduced current Input at –100 dBm (close to sensitivity limit) 18
Input at –40 dBm (well above sensitivity limit) 17
38.4 Input at –100 dBm (close to sensitivity limit) 18
Input at –40 dBm (well above sensitivity limit) 17
250 Input at –100 dBm (close to sensitivity limit) 18.5
Input at –40 dBm (well above sensitivity limit) 17
868, 915 1.2 Register settings optimized for reduced current(2) Input at –100 dBm (close to sensitivity limit) 16
Input at –40 dBm (well above sensitivity limit) 15
38.4 Input at –100 dBm (close to sensitivity limit) 16
Input at –40 dBm (well above sensitivity limit) 15
250 Input at –100 dBm (close to sensitivity limit) 16
Input at –40 dBm (well above sensitivity limit) 15
(1) Reduced current setting (MDMCFG2.DEM_DCFILT_OFF  = 1) gives a slightly lower current consumption at the cost of a reduction in sensitivity. See tables "RF Receive" for additional details on current consumption and sensitivity.
(2) For 868 or 915 MHz, see Figure 5-20 for current consumption with register settings optimized for sensitivity.
RF430F5978 g_typ_rx_icc_868_slas740.gif Figure 5-20 Typical RX Current Consumption Over Temperature and Input Power Level, 868 MHz, Sensitivity-Optimized Setting

5.40.4 Current Consumption, Transmit Mode

TA = 25°C, VCC = 3 V (unless otherwise noted)(1) (1)
PARAMETER FREQUENCY [MHz\} PATABLE SETTING OUTPUT POWER (dBm) TYP UNIT
Current consumption, TX 315 0xC0 Maximum 26 mA
0xC4 +10 25
0x51 0 15
0x29 –6 15
433 0xC0 Maximum 33
0xC6 +10 29
0x50 0 17
0x2D –6 17
868 0xC0 Maximum 36
0xC3 +10 33
0x8D 0 18
0x2D –6 18
915 0xC0 Maximum 35
0xC3 +10 32
0x8D 0 18
0x2D –6 18

5.40.5 Typical TX Current Consumption, 315 MHz

PARAMETER PATABLE SETTING OUTPUT POWER (dBm) VCC 2 V 3 V 3.6 V UNIT
TA 25°C 25°C 25°C
Current consumption, TX 0xC0 Maximum 27.5 26.4 28.1 mA
0xC4 +10 25.1 25.2 25.3
0x51 0 14.4 14.6 14.7
0x29 –6 14.2 14.7 15.0

5.40.6 Typical TX Current Consumption, 433 MHz

PARAMETER PATABLE SETTING OUTPUT POWER (dBm) VCC 2 V 3 V 3.6 V UNIT
TA 25°C 25°C 25°C
Current consumption, TX 0xC0 Maximum 33.1 33.4 33.8 mA
0xC6 +10 28.6 28.8 28.8
0x50 0 16.6 16.8 16.9
0x2D –6 16.8 17.5 17.8

5.40.7 Typical TX Current Consumption, 868 MHz

PARAMETER PATABLE SETTING OUTPUT POWER (dBm) VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Current consumption, TX 0xC0 Maximum 36.7 35.2 34.2 38.5 35.5 34.9 37.1 35.7 34.7 mA
0xC3 +10 34.0 32.8 32.0 34.2 33.0 32.5 34.3 33.1 32.2
0x8D 0 18.0 17.6 17.5 18.3 17.8 18.1 18.4 18.0 17.7
0x2D –6 17.1 17.0 17.2 17.8 17.8 18.3 18.2 18.1 18.1

5.40.8 Typical TX Current Consumption, 915 MHz

PARAMETER PATABLE SETTING OUTPUT POWER (dBm) VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Current consumption, TX 0xC0 Maximum 35.5 33.8 33.2 36.2 34.8 33.6 36.3 35.0 33.8 mA
0xC3 +10 33.2 32.0 31.0 33.4 32.1 31.2 33.5 32.3 31.3
0x8D 0 17.8 17.4 17.1 18.1 17.6 17.3 18.2 17.8 17.5
0x2D –6 17.0 16.9 16.9 17.7 17.6 17.6 18.1 18.0 18.0

5.40.9 RF Receive, Overall

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Digital channel filter bandwidth(1) 58 812 kHz
Spurious emissions(3) (2) 25 MHz to 1 GHz –68 –57 dBm
Above 1 GHz –66 –47
RX latency Serial operation(4) 9 bit
(1) User programmable. The bandwidth limits are proportional to crystal frequency (given values assume a 26.0-MHz crystal).
(2) Maximum figure is the ETSI EN 300 220 limit
(3) Typical radiated spurious emission is –49 dBm measured at the VCO frequency
(4) Time from start of reception until data is available on the receiver data output pin is equal to 9 bit.

5.40.10 RF Receive, 315 MHz

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
2-FSK, 1% packet error rate, 20-byte packet length, Sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF  = 0 (unless otherwise noted)
PARAMETER DATA RATE (kBaud) TEST CONDITIONS TYP UNIT
Receiver sensitivity 0.6 14.3-kHz deviation, 58-kHz digital channel filter bandwidth –117 dBm
1.2 5.2-kHz deviation, 58-kHz digital channel filter bandwidth(1) –111
38.4 20-kHz deviation, 100-kHz digital channel filter bandwidth(2) –103
250 127-kHz deviation, 540-kHz digital channel filter bandwidth (3) –95
500 MSK, 812-kHz digital channel filter bandwidth(3) –86
(1) Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF = 1. The typical current consumption is then reduced by approximately 2 mA close to the sensitivity limit. The sensitivity is typically reduced to –109 dBm.
(2) Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF = 1. The typical current consumption is then reduced by approximately 2 mA close to the sensitivity limit. The sensitivity is typically reduced to –102 dBm.
(3) MDMCFG2.DEM_DCFILT_OFF = 1 can not be used for data rates ≥ 250 kBaud.

5.40.11 RF Receive, 433 MHz

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
2-FSK, 1% packet error rate, 20-byte packet length, Sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF  = 0 (unless otherwise noted)
PARAMETER DATA RATE (kBaud) TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity 0.6 14.3-kHz deviation, 58-kHz digital channel filter bandwidth –114 dBm
1.2 5.2-kHz deviation, 58-kHz digital channel filter bandwidth(1) –111
38.4 20-kHz deviation, 100-kHz digital channel filter bandwidth(2) –104
250 127-kHz deviation, 540-kHz digital channel filter bandwidth (3) –93
500 MSK, 812-kHz digital channel filter bandwidth(3) –85
(1) Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF = 1. The typical current consumption is then reduced by approximately 2 mA close to the sensitivity limit. The sensitivity is typically reduced to –109 dBm.
(2) Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF = 1. The typical current consumption is then reduced by approximately 2 mA close to the sensitivity limit. The sensitivity is typically reduced to –101 dBm.

5.40.12 RF Receive, 868 or 915 MHz

TA = 25°C, VCC = 3 V (unless otherwise noted)(1),
1% packet error rate, 20-byte packet length, Sensitivity optimized, MDMCFG2.DEM_DCFILT_OFF  = 0 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
0.6-kBaud data rate, 2-FSK, 14.3-kHz deviation, 58-kHz digital channel filter bandwidth (unless otherwise noted)
Receiver sensitivity –115 dBm
1.2-kBaud data rate, 2-FSK, 5.2-kHz deviation, 58-kHz digital channel filter bandwidth (unless otherwise noted)
Receiver sensitivity(1) –109 dBm
2-GFSK modulation by setting MDMCFG2.MOD_FORMAT = 2,
Gaussian filter with BT = 0.5
–109
Saturation FIFOTHR.CLOSE_IN_RX = 0(3) –28 dBm
Adjacent channel rejection Desired channel 3 dB above the sensitivity limit, 100-kHz channel spacing(2) –100-kHz offset 39 dB
+100-kHz offset 39
Image channel rejection IF frequency 152 kHz, desired channel 3 dB above the sensitivity limit 29 dB
Blocking Desired channel 3 dB above the sensitivity limit(4) ±2-MHz offset –48 dBm
±10-MHz offset –40
38.4-kBaud data rate, 2-FSK, 20-kHz deviation, 100-kHz digital channel filter bandwidth (unless otherwise noted)
Receiver sensitivity(5) –102 dBm
2-GFSK modulation by setting MDMCFG2.MOD_FORMAT = 2,
Gaussian filter with BT = 0.5
–101
Saturation FIFOTHR.CLOSE_IN_RX = 0(3) –19 dBm
Adjacent channel rejection Desired channel 3 dB above the sensitivity limit, 200 kHz channel spacing(4) –200-kHz offset 20 dB
+200-kHz offset 25
Image channel rejection IF frequency 152 kHz, Desired channel 3 dB above the sensitivity limit 23 dB
Blocking Desired channel 3 dB above the sensitivity limit(4) ±2-MHz offset –48 dBm
±10-MHz offset –40
250-kBaud data rate, 2-FSK, 127-kHz deviation, 540-kHz digital channel filter bandwidth (unless otherwise noted)
Receiver sensitivity (7) –90 dBm
2-GFSK modulation by setting MDMCFG2.MOD_FORMAT = 2,
Gaussian filter with BT = 0.5
–90
Saturation FIFOTHR.CLOSE_IN_RX = 0(3) –19 dBm
Adjacent channel rejection Desired channel 3 dB above the sensitivity limit, 750-kHz channel spacing(6) –750-kHz offset 24 dB
+750-kHz offset 30
Image channel rejection IF frequency 304 kHz, Desired channel 3 dB above the sensitivity limit 18 dB
Blocking Desired channel 3 dB above the sensitivity limit(6) ±2-MHz offset –53 dBm
±10-MHz offset –39
500-kBaud data rate, MSK, 812-kHz digital channel filter bandwidth (unless otherwise noted)
Receiver sensitivity(7) –84 dBm
Image channel rejection IF frequency 355 kHz, Desired channel 3 dB above the sensitivity limit –2 dB
Blocking Desired channel 3 dB above the sensitivity limit(8) ±2-MHz offset –53 dBm
±10-MHz offset –38
(1) Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF = 1. The typical current consumption is then reduced by approximately 2 mA close to the sensitivity limit. The sensitivity is typically reduced to –107 dBm.
(2) See Figure 5-21 for blocking performance at other offset frequencies.
(3) See design note DN010 Close-in Reception with CC1101 (SWRA147).
(4) See Figure 5-22 for blocking performance at other offset frequencies.
(5) Sensitivity can be traded for current consumption by setting MDMCFG2.DEM_DCFILT_OFF = 1. The typical current consumption is then reduced by approximately 2 mA close to the sensitivity limit. The sensitivity is typically reduced to –100 dBm.
(6) See Figure 5-23 for blocking performance at other offset frequencies.
(7) MDMCFG2.DEM_DCFILT_OFF = 1 cannot be used for data rates ≥ 250 kBaud.
(8) See Figure 5-24 for blocking performance at other offset frequencies.
RF430F5978 g_typ_select_1p2kbaud_slas740.gif
A.

NOTE:

868.3 MHz, 2-FSK, 5.2-kHz deviation, IF frequency is 152.3 kHz, digital channel filter bandwidth is 58 kHz
Figure 5-21 Typical Selectivity at 1.2-kBaud Data Rate
RF430F5978 g_typ_select_38p4kbaud_slas740.gif
A.

NOTE:

868 MHz, 2-FSK, 20 kHz deviation, IF frequency is 152.3 kHz, digital channel filter bandwidth is 100 kHz
Figure 5-22 Typical Selectivity at 38.4-kBaud Data Rate
RF430F5978 g_typ_select_250kbaud_slas740.gif
A.

NOTE:

868 MHz, 2-FSK, IF frequency is 304 kHz, digital channel filter bandwidth is 540 kHz
Figure 5-23 Typical Selectivity at 250-kBaud Data Rate
RF430F5978 g_typ_select_500kbaud_slas740.gif
A.

NOTE:

868 MHz, 2-FSK, IF frequency is 355 kHz, digital channel filter bandwidth is 812 kHz
Figure 5-24 Typical Selectivity at 500-kBaud Data Rate

5.40.13 Typical Sensitivity, 315 MHz, Sensitivity-Optimized Setting

PARAMETER DATA RATE (kBaud) VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Sensitivity, 315MHz 1.2 –112 –112 –110 –112 –111 –109 –112 –111 –108 dBm
38.4 –105 –105 –104 –105 –103 –102 –105 –104 –102
250 –95 –95 –92 –94 –95 –92 –95 –94 –91

5.40.14 Typical Sensitivity, 433 MHz, Sensitivity-Optimized Setting

PARAMETER DATA RATE (kBaud) VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Sensitivity, 433MHz 1.2 –111 –110 –108 –111 –111 –108 –111 –110 –107 dBm
38.4 –104 –104 –101 –104 –104 –101 –104 –103 –101
250 –93 –94 –91 –93 –93 –90 –93 –93 –90

5.40.15 Typical Sensitivity, 868 MHz, Sensitivity-Optimized Setting

PARAMETER DATA RATE (kBaud) VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Sensitivity, 868MHz 1.2 –109 –109 –107 –109 –109 –106 –109 –108 –106 dBm
38.4 –102 –102 –100 –102 –102 –99 –102 –101 –99
250 –90 –90 –88 –89 –90 –87 –89 –90 –87
500 –84 –84 –81 –84 –84 –80 –84 –84 –80

5.40.16 Typical Sensitivity, 915 MHz, Sensitivity-Optimized Setting

PARAMETER DATA RATE (kBaud) VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Sensitivity, 915MHz 1.2 –109 –109 –107 –109 –109 –106 –109 –108 –105 dBm
38.4 –102 –102 –100 –102 –102 –99 –103 –102 –99
250 –92 –92 –89 –92 –92 –88 –92 –92 –88
500 –87 –86 –81 –86 –86 –81 –86 –85 –80

5.40.17 RF Transmit

TA = 25°C, VCC = 3 V (unless otherwise noted)(1), PTX = +10 dBm (unless otherwise noted)
PARAMETER FREQUENCY (MHz) TEST CONDITIONS MIN TYP MAX UNIT
Differential load impedance(1) 315 122 + j31 Ω
433 116 + j41
868/915 86.5 + j43
Output power, highest setting(2) 315 Delivered to a 50-Ω single-ended load through the RF matching network of the CC430 reference design +12 dBm
433 +13
868 +11
915 +11
Output power, lowest setting(2) Delivered to a 50-Ω single-ended load through the RF matching network of the CC430 reference design –30 dBm
Harmonics,
radiated(3)(4)(5)
433 Second harmonic –56 dBm
Third harmonic –57
868 Second harmonic –50
Third harmonic –52
915 Second harmonic –50
Third harmonic –54
Harmonics, conducted 315 Frequencies below 960 MHz +10 dBm CW < –38 dBm
Frequencies above 960 MHz < –48
433 Frequencies below 1 GHz +10 dBm CW –45
Frequencies above 1 GHz < –48
868 Second harmonic +10 dBm CW –59
Other harmonics < –71
915 Second harmonic +11 dBm CW(6) –53
Other harmonics < –47
Spurious emissions, conducted, harmonics not included(7) 315 Frequencies below 960 MHz +10 dBm CW < –58 dBm
Frequencies above 960 MHz < –53
433 Frequencies below 1 GHz +10 dBm CW < –54
Frequencies above 1 GHz < –54
Frequencies within 47 to 74, 87.5 to 118, 174 to 230, 470 to 862 MHz < –63
868 Frequencies below 1 GHz +10 dBm CW < –46
Frequencies above 1 GHz < –59
Frequencies within 47 to 74, 87.5 to 118, 174 to 230, 470 to 862 MHz < –56
915 Frequencies below 960 MHz +11 dBm CW < –49
Frequencies above 960 MHz < –63
TX latency(8) Serial operation 8 bits
(1) Differential impedance as seen from the RF port (RF_P and RF_N) toward the antenna. Follow the CC430 reference designs available from the TI website.
(2) Output power is programmable, and full range is available in all frequency bands. Output power may be restricted by regulatory limits. See also Application Note AN050 Using the CC1101 in the European 868MHz SRD Band (SWRA146) and design note DN013 Programming Output Power on CC1101 (SWRA168), which gives the output power and harmonics when using multi-layer inductors. The output power is then typically +10 dBm when operating at 868 or 915 MHz.
(3) The antennas used during the radiated measurements (SMAFF-433 from R.W.Badland and Nearson S331 868/915) play a part in attenuating the harmonics.
(4) Measured on EM430F6137RF900 with CW, maximum output power
(5) All harmonics are below –41.2 dBm when operating in the 902 through 928 MHz band.
(6) Requirement is –20 dBc under FCC 15.247
(7) All radiated spurious emissions are within the limits of ETSI. Also see design note DN017 CC11xx 868 or 915 MHz RF Matching (SWRA168).
(8) Time from sampling the data on the transmitter data input pin until it is observed on the RF output ports

5.40.18 Optimum PATABLE Settings for Various Output Power Levels and Frequency Bands

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
OUTPUT POWER (dBm) PATABLE SETTING
315 MHz 433 MHz 868 MHz 915 MHz
–30 0x12 0x05 0x03 0x03
–12 0x33 0x26 0x25 0x25
–6 0x29 0x2D 0x2D 0x2D
0 0x51 0x50 0x8D 0x8D
10 0xC4 0xC4 0xC3 0xC3
Maximum 0xC0 0xC0 0xC0 0xC0

5.40.19 Typical Output Power, 315 MHz(1)

PARAMETER PATABLE SETTING VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Output power, 315 MHz 0xC0 (max) 11.9 11.8 11.8 dBm
0xC4 (10 dBm) 10.3 10.3 10.3
0xC6 (default) 9.3
0x51 (0 dBm) 0.7 0.6 0.7
0x29 (–6 dBm) –6.8 –5.6 –5.3

5.40.20 Typical Output Power, 433 MHz(1)

PARAMETER PATABLE SETTING VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Output power, 433 MHz 0xC0 (max) 12.6 12.6 12.6 dBm
0xC4 (10 dBm) 10.3 10.2 10.2
0xC6 (default) 10.0
0x50 (0 dBm) 0.3 0.3 0.3
0x2D (–6 dBm) –6.4 –5.4 –5.1

5.40.21 Typical Output Power, 868 MHz(1)

PARAMETER PATABLE SETTING VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Output power, 868 MHz 0xC0 (max) 11.9 11.2 10.5 11.9 11.2 10.5 11.9 11.2 10.5 dBm
0xC3 (10 dBm) 10.8 10.1 9.4 10.8 10.1 9.4 10.7 10.1 9.4
0xC6 (default) 8.8
0x8D (0 dBm) 1.0 0.3 –0.3 1.1 0.3 –0.3 1.1 0.3 –0.3
0x2D (–6 dBm) –6.5 –6.8 –7.3 –5.3 –5.8 –6.3 –4.9 –5.4 –6.0

5.40.22 Typical Output Power, 915 MHz(1)

PARAMETER PATABLE SETTING VCC 2 V 3 V 3.6 V UNIT
TA –40°C 25°C 85°C –40°C 25°C 85°C –40°C 25°C 85°C
Output power, 915 MHz 0xC0 (max) 12.2 11.4 10.6 12.1 11.4 10.7 12.1 11.4 10.7 dBm
0xC3 (10 dBm) 11.0 10.3 9.5 11.0 10.3 9.5 11.0 10.3 9.6
0xC6 (default) 8.8
0x8D (0 dBm) 1.9 1.0 0.3 1.9 1.0 0.3 1.9 1.1 0.3
0x2D (–6 dBm) –5.5 –6.0 –6.5 –4.3 –4.8 –5.5 –3.9 –4.4 –5.1

5.40.23 Frequency Synthesizer Characteristics

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
MIN figures are given using a 27MHz crystal. TYP and MAX figures are given using a 26MHz crystal.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Programmed frequency resolution(1) 26- to 27-MHz crystal 397 fXOSC/216 412 Hz
Synthesizer frequency tolerance(2) ±40 ppm
RF carrier phase noise 50-kHz offset from carrier –95 dBc/Hz
100-kHz offset from carrier –94
200-kHz offset from carrier –94
500-kHz offset from carrier –98
1-MHz offset from carrier –107
2-MHz offset from carrier –112
5-MHz offset from carrier –118
10-MHz offset from carrier –129
PLL turnon or hop time(3) Crystal oscillator running 85.1 88.4 88.4 µs
PLL RX-to-TX settling time(4) 9.3 9.6 9.6 µs
PLL TX-to-RX settling time(5) 20.7 21.5 21.5 µs
PLL calibration time(6) 694 721 721 µs
(1) The resolution (in Hz) is equal for all frequency bands.
(2) Depends on crystal used. Required accuracy (including temperature and aging) depends on frequency band and channel bandwidth and spacing.
(3) Time from leaving the IDLE state until arriving in the RX, FSTXON, or TX state, when not performing calibration.
(4) Settling time for the 1-IF frequency step from RX to TX
(5) Settling time for the 1-IF frequency step from TX to RX
(6) Calibration can be initiated manually or automatically before entering or after leaving RX/TX.

5.40.24 Typical RSSI_offset Values

TA = 25°C, VCC = 3 V (unless otherwise noted)(1)
DATA RATE (kBaud) RSSI_OFFSET (dB)
433 MHz 868 MHz
1.2 74 74
38.4 74 74
250 74 74
500 74 74
RF430F5978 g_typ_rssi_pin_868mhz_slas740.gif Figure 5-25 Typical RSSI Value vs Input Power Level for Different Data Rates at 868 MHz

5.41 3D LF Front-End Parameters

5.41.1 Recommended Operating Conditions

MIN NOM MAX UNIT
VBAT Supply voltage range during LF operation 2.0 3.6 V
RF crystal load capacitance 10 13 20 pF
RF crystal effective series resistance 100 Ω

5.41.2 Resonant Circuits – LF Front End

The resonance circuit quality factor QOP can have a wide range between 10 and 120. The resonance frequency can be trimmed by the embedded trimming capacitor array.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fRES Resonant circuit frequency 25°C 133.2 134.2 135.2 kHz
fL Low-bit transmit frequency 25°C, QOP = 10 to 120 133.2 134.2 135.2
–40°C to 85°C, QOP = 10 to 120 132.2 134.2 136.2
fH High-bit transmit frequency 25°C, QOP = 10 to 120 123.2 124.2 125.2
–40°C to 85°C, QOP = 10 to 120 122.2 124.2 126.2

5.41.3 External Antenna Coil – LF Front End

The antenna coil LR, resonant capacitor CR and charge capacitor CL are external components with following recommended parameters
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LR1 Equivalent inductance 25°C, f = 134.2 kHz 7.37 7.6 7.81 mH
LR2 Equivalent inductance 25°C, f = 134.2 kHz 4.37 4.5 4.63 mH
dLR/LRdT Temperature coefficient of LR –40°C to 85°C 250 ppm/°C
QLRT Quality factor of LR –40°C to 85°C 10 150

5.41.4 Resonant Circuit Capacitor – LF Front End

The input capacitance of the RF pins CRF is the sum of parasitic capacitances of circuit blocks connected to the RF pin. The trimming capacitors are internal capacitances and can be programmed on or off. The resonance capacitor CR is an external component and is not part of this IC.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CR Resonant circuit capacitor (option 1) (dCR = ±2.0%) LR = 7.6mH 147 150 153 pF
CR Resonant circuit capacitor (option 2) (dCR = ±2.0%) LR = 4.5mH 264.6 270 275.4 pF
Dielectric of CR dLR/LRdT ≤ 250 ppm NPO
dCR/CRdT Temperature coefficient of CR (NP0) dLR/LRdT ≤ 250 ppm ±30 73 ppm/°C
QCR Quality factor 2000
VRF Operating voltage 20 50 VPP
CRF RF input capacitance VCL = 5 V CT = off 21.3 24 26.6 pF
QRF IC input quality factor (RF1, RF2, RF3) VRF = 0.1 V, CT = max,
CM = on or off
250 350
Capacitance voltage dependancy VCL = 0 to 5 V,
CT = on or off
–1 %/V
Tstep Trimming steps 128
CTmin Minimum trimming capacitor 0 pF
CTmax Maximum trimming capacitor
(CT = CT1 + CT2 + ... + CT7)
Calculated 70.8 74.7 78.8 pF
CT1 Trimming capacitor 1 0.6 pF
CT2 Trimming capacitor 2 1.2 pF
CT3 Trimming capacitor 3 2.4 pF
CT4 Trimming capacitor 4 4.7 pF
CT5 Trimming capacitor 5 9.4 pF
CT6 Trimming capacitor 6 18.8 pF
CT7 Trimming capacitor 7 37.6 pF
dCT/dV Voltage coefficient of CT 0.1 pF/V
dCT/dT Temperature coefficient of CT 0.02 pF/K
CM1 Modulation capacitor
4.5 mH: CM1 + CM2
7.6 mH: CM1
Integrated capacitor 33.1 35.0 36.9 pF
CM2 Modulation capacitor Integrated capacitor 17.0 18.0 19.0 pF
|dCM/dV| Modulation capacitor voltage coefficient 25°C 0.1 %/V
dCM/dT Modulation capacitor voltage coefficient 0.02 pF/K

5.41.5 Charge Capacitor – LF Front End

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CL Charge capacitor (dCL = ±10%) 25°C, QOP = 134.2 kHz 198 220 242 nF
dCL(T) Temperature coefficient of CL –40°C to 85°C –10% 10%
Dielectric of CL XR7
DCL(t) Charge capacitor aging 100000 h –10% 0%

5.41.6 LF Wake Receiver Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fRES,PE Resonant circuit frequency 25°C 110 140 kHz
tWakeUp Wake-up time 500 560 1000 µs
IPESBWP Standby current Wake pattern A active,
wake pattern B off,
regular sensitivity, VBAT = 3 V
4.4 µA
VWAKEA Sensitivity A (regular) Configured to highest sensitivity 2.6 3.7 6.2 mVpp
VWAKEA Sensitivity A (regular) Configured to lowest sensitivity 9 13.5 23 mVpp
VWAKEA Sensitivity A (high sensitivity mode) Configured to highest sensitivity and high sensitivity mode 0.3 0.5 0.9 mVpp
VWAKEB Sensitivity B Configured to highest sensitivity 2.3 4.2 7.5 mVpp
VWAKEB Sensitivity B Configured to lowest sensitivity 50 110 200 mVpp
VRF Maximum RF input voltage 10 Vpp
S/N Wake pattern detection error rate (S/N) 10 dB
tsA WDE settling time (wake A, low sensitivity) 500 µs
tsAh WDE settling time (wake A, high sensitivity) 600 µs
ts\B WDE settling time (wake B) 2000 µs
tresA WDE resettling time (strong burst recovery time) Step VRF 2Vpp to 10mVpp 3000 µs

5.41.7 RSSI - LF Wake Receiver Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
DR Dynamic range 72 dB
VRF Input voltage range 0.002 8 Vpp
A RSSI linear coefficient 28
B RSSI constant coefficient 180
#RSSI Number of RSSI values 128
Verr16mV Absolute RSSI error at VRF = 16 mVpp –1.28 1.28 mVpp
err16mV Relative RSSI error VRF ≥ 16 mVpp –8% 8%
Verr2mV Absolute RSSI error at VRF = 2 mVpp –0.4 0.4 mVpp
err2mV Relative RSSI error at VRF = 2 mVpp –20% 20%
Vmin Resolution at VRF = 2 mVpp 0.14 mV
t Measurement time (all three channels) 2 ms