SLLS351F April   2002  – July 2021 SN65C3221 , SN75C3221

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions (1)
      1. 6.3.1 Thermal Information
    4. 6.4  Electrical Characteristics
    5. 6.5  Electrical Characteristics - Driver
    6. 6.6  Switching Characteristics - Driver
    7. 6.7  Electrical Characteristics - Receiver
    8. 6.8  Switching Characteristics - Receiver
    9. 6.9  Electrical Characteristics - Auto-Powerdown
    10. 6.10 Switching Characteristics - Auto-Powerdown
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.8 Switching Characteristics - Receiver

over recommended ranges of supply voltage and operating free-air temperature range (unless otherwise noted)(3)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Propagation delay time, low- to high-level output CL = 150 pF, See Figure 7-3 150 ns
tPHL Propagation delay time, high- to low-level output CL = 150 pF, See Figure 7-3 150 ns
ten Output enable time CL = 150 pF, RL = 3 kΩ, See Figure 7-4 200 ns
tdis Output disable time CL = 150 pF, RL = 3 kΩ, See Figure 7-4 200 ns
tsk(p) Pulse skew(2) See Figure 7-3 50 ns
(1) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(2) Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
(3) Test conditions are C1−C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2−C4 = 0.33 μF at VCC = 5 V ± 0.5 V.