SCES210P April   1999  – January 2019 SN74LVC2G241

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Logic Diagram (Positive Logic)
      1.      Device Images
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Operating Characteristics
    8. 6.8 Typical Characteristic
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DCU|8
  • YZP|8
  • DCT|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Description

This dual buffer and line driver is designed for 1.65-V to 5.5-V VCC operation.

The SN74LVC2G241 device is designed specifically to improve both the performance and density of 3-state memory-address drivers, clock drivers, and bus-oriented receivers and transmitters.

NanoFree package technology is a major breakthrough in IC packaging concepts, using the die as the package.

The SN74LVC2G241 device is organized as two 1-bit line drivers with separate output-enable (1OE, 2OE) inputs. When 1OE is low and 2OE is high, the device passes data from the A inputs to the Y outputs. When 1OE is high and 2OE is low, the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor, and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking or the current-sourcing capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
SN74LVC2G241DCT SM8 (8) 2.95 mm × 2.80 mm
SN74LVC2G241DCU VSOOP (8) 2.30 mm × 2.00 mm
SN74LVC2G241YZP DSBGA (8) 1.91 mm × 0.91 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Logic Diagram (Positive Logic)

SN74LVC2G241 ld_ces210.gif