SLOS432B April   2004  – October 2015 THS4281

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics, VS = 3 V (VS+ = 3 V, VS- = GND)
    6. 6.6 Electrical Characteristics, VS = 5 V (VS+ = 5 V, VS- = GND)
    7. 6.7 Electrical Characteristics, VS = ±5 V
    8. 6.8 Dissipation Ratings
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 High-Speed Operational Amplifiers
    2. 7.2 Feature Description
      1. 7.2.1 Wideband, Noninverting Operation
      2. 7.2.2 Wideband, Inverting Operation
    3. 7.3 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Single-Supply Operation
      2. 8.1.2 Driving Capacitive Loads
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Active Filtering With the THS4281
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power-Supply Decoupling Techniques and Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • DBV|5
  • DGK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).(1)
MIN MAX UNIT
Supply voltage, VS– to VS+ 16.5 V
Input voltage, VI ±VS ± 0.5 V
Differential input voltage, VID ±2 V
Output current, IO ±100 mA
Continuous power dissipation See Dissipation Ratings Table
Maximum junction temperature, any condition, (2) TJ +150 °C
Maximum junction temperature, continuous operation, long-term reliability(2) TJ 125° °C
Storage temperature, Tstg –65 150 °C
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device. recommended operating conditions.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
Machine Model (MM) ±100
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
Supply voltage, (VS+ and VS –) Dual supply ±1.35 ±8.25 V
Single supply 2.7 16.5

6.4 Thermal Information

THERMAL METRIC(1) THS4281 UNIT
DBV (SOT-23) D (SOIC) DGK (VSSOP)
5 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance (2) 154.4 126.6 192.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 115 69 77.7 °C/W
RθJB Junction-to-board thermal resistance 31.4 64.7 112.8 °C/W
ψJT Junction-to-top characterization parameter 14.7 20.5 14.6 °C/W
ψJB Junction-to-board characterization parameter 31 64.3 111.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) This data was taken using the JEDEC standard High-K test PCB.

6.5 Electrical Characteristics, VS = 3 V (VS+ = 3 V, VS– = GND)

At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ to 1.5 V, TA = 25°C unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
Small-Signal Bandwidth G = +1, VO = 100 mVPP, RF = 34 Ω 83 MHz
G = +2, VO = 100 mVPP, RF = 1.65 kΩ 40 MHz
G = +5, VO = 100 mVPP, RF = 1.65 kΩ 8 MHz
G = +10, VO = 100 mVPP, RF = 1.65 kΩ 3.8 MHz
0.1-dB Flat Bandwidth G = +2, VO = 100 mVPP, RF = 1.65 kΩ 20 MHz
Full-Power Bandwidth G = +2, VO = 2 VPP 8 MHz
Slew Rate G = +1, VO = 2-V Step 26 V/μs
G = –1, VO = 2-V Step 27 V/μs
Settling time to 0.1% G = –1, VO = 1-V Step 80 ns
Settling time to 0.01% G = –1, VO = 1-V Step 155 ns
Rise/Fall Times G = +1, VO = 2-V Step 55 ns
AC PERFORMANCE— HARMONIC DISTORTION
Second Harmonic Distortion G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ –52 dBc
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ –52
Third Harmonic Distortion G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ –69 dBc
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ –71
THD + N G = +2, VO = 2 VPP, VO = 1 VPP, f = 10 kHz 0.003%
G = +2, VO = 2 VPP, VO = 2 VPP, f = 10 kHz 0.03%
Differential Gain (NTSC/PAL) G = +2, RL = 150 Ω 0.05/0.08%
Differential Phase (NTSC/PAL) G = +2, RL = 150 Ω 0.25/0.35 º
Input Voltage Noise f = 100 kHz 12.5 nA/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Open-Loop Voltage Gain (AOL) 95 dB
Input Offset Voltage VCM = 1.5 V 25°C 0.5 2.5 mV
0°C to 70°C 3.5
–40°C to +85°C 3.5
Average Offset Voltage Drift VCM = 1.5 V 0°C to 70°C ±7 µV/°C
–40°C to +85°C ±7
Input Bias Current VCM = 1.5 V 25°C 0.5 0.8 µA
0°C to 70°C 1
–40°C to +85°C 1
Average Bias Current Drift VCM = 1.5 V 0°C to 70°C ±2 nA/°C
–40°C to +85°C ±2
Input Offset Current VCM = 1.5 V 25°C 0.1 0.4 μA
0°C to 70°C 0.5
–40°C to +85°C 0.5
Average Offset Current Drift VCM = 1.5 V 0°C to 70°C ±2 nA/°C
–40°C to +85°C ±2
INPUT CHARACTERISTICS
Common-Mode Input Range 25°C –0.3/3.3 –0.4/3.4 V
0°C to 70°C –0.1/3.1
–40°C to +85°C –0.1/3.1
Common-Mode Rejection Ratio VCM = 0 V to 3 V 25°C 75 92 dB
0°C to 70°C 70
–40°C to +85°C 70
Input Resistance Common-mode 100 MΩ
Input Capacitance Common-mode/Differential 0.8/1.2 pF
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 10 kΩ 0.04/2.96 V
RL = 1 kΩ 25°C 0.14/2.86 0.1/2.9 V
0°C to 70°C 0.2/2.8
–40°C to +85°C 0.2/2.8
Output Current (Sourcing) RL = 10 Ω 25°C 18 23 mA
0°C to 70°C 15
–40°C to +85°C 15
Output Current (Sinking) RL = 10 Ω 25°C 22 29 mA
0°C to 70°C 19
–40°C to +85°C 19
Output Impedance f = 1 MHz 1 Ω
POWER SUPPLY
Maximum Operating Voltage 25°C 3 16.5 V
0°C to 70°C 16.5
–40°C to +85°C 16.5
Minimum Operating Voltage 25°C 2.7 3 V
0°C to 70°C 2.7
–40°C to +85°C 2.7
Maximum Quiescent Current 25°C 0.75 0.9 mA
0°C to 70°C 0.98
–40°C to +85°C 1
Minimum Quiescent Current 25°C 0.6 0.75 mA
0°C to 70°C 0.57
–40°C to +85°C 0.55
Power-Supply Rejection (+PSRR) VS+ = 3.25 V to 2.75 V, VS– = 0 V 25°C 70 90 dB
0°C to 70°C 65
–40°C to +85°C 65
Power-Supply Rejection (–PSRR) VS+ = 3 V, VS– = 0 V to 0.65 V 25°C 70 90 dB
0°C to 70°C 65
–40°C to +85°C 65

6.6 Electrical Characteristics, VS = 5 V (VS+ = 5 V, VS– = GND)

At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ to 2.5 V, TA = 25°C unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
Small-Signal Bandwidth G = +1, VO = 100 mVPP, RF = 34 Ω 90 MHz
G = +2, VO = 100 mVPP, RF = 2 kΩ 40 MHz
G = +5, VO = 100 mVPP, RF = 2 kΩ 8 MHz
G = +10, VO = 100 mVPP, RF = 2 kΩ 3.8 MHz
0.1-dB Flat Bandwidth G = +2, VO = 100 mVPP, RF = 2 kΩ 20 MHz
Full-Power Bandwidth G = +2, VO = 2 VPP 9 MHz
Slew Rate G = +1, VO = 2-V Step 31 V/μs
G = –1, VO = 2-V Step 34 V/μs
Settling Time to 0.1% G = –1, VO = 2-V Step 78 ns
Settling Time to 0.01% G = –1, VO = 2-V Step 150 ns
Rise/Fall Times G = +1, VO = 2-V Step 48 ns
AC PERFORMANCE— HARMONIC DISTORTION
Second Harmonic Distortion G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ –67 dBc
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ –92
Third Harmonic Distortion G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ –76 dBc
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ –106
THD + N G = +2, VO = 2 VPP, VO = 2 VPP, f = 10 kHz 0.0009%
G = +2, VO = 2 VPP, VO = 4 VPP, f = 10 kHz 0.0005%
Differential Gain (NTSC/PAL) G = +2, RL = 150 Ω 0.11/0.17%
Differential Phase (NTSC/PAL) 0.11/0.14 º
Input Voltage Noise f = 100 kHz 12.5 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Open-Loop Voltage Gain (AOL) 25°C 85 105 dB
0°C to 70°C 80
–40°C to +85°C 80
Input Offset Voltage VCM = 2.5 V 25°C 2.5 0.5 mV
0°C to 70°C 3.5
–40°C to +85°C 3.5
Average Offset Voltage Drift VCM = 2.5 V 0°C to 70°C ±7 µV/°C
–40°C to +85°C ±7
Input Bias Current VCM = 2.5 V 25°C 0.5 0.8 µA
0°C to 70°C 1
–40°C to +85°C 1
Average Bias Current Drift VCM = 2.5 V 0°C to 70°C ±2 nA/°C
–40°C to +85°C ±2
Input Offset Current VCM = 2.5 V 25°C 0.1 0.4 µA
0°C to 70°C 0.5
–40°C to +85°C 0.5
Average Offset Current Drift VCM = 2.5 V 0°C to 70°C ±2 nA/°C
–40°C to +85°C ±2
INPUT CHARACTERISTICS
Common-Mode Input Range 25°C –0.4/5.4 –0.3/5.3 V
0°C to 70°C –0.1/5.1
–40°C to +85°C –0.1/5.1
Common-Mode Rejection Ratio VCM = 0 V to 5 V 25°C 85 100 dB
0°C to 70°C 80
–40°C to +85°C 80
Input Resistance Common-mode 100 MΩ
Input Capacitance Common-mode/Differential 0.8/1.2 pF
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 10 kΩ 0.04/4.96 V
RL = 1 kΩ 25°C 0.2/4.8 0.15/4.85 V
0°C to 70°C 0.25/4.75
–40°C to +85°C 0.25/4.75
Output Current (Sourcing) RL = 10 Ω 25°C 24 33 mA
0°C to 70°C 20
–40°C to +85°C 20
Output Current (Sinking) RL = 10 Ω 25°C 30 44 mA
0°C to 70°C 25
–40°C to +85°C 25
Output Impedance f = 1 MHz 25°C 1 Ω
0°C to 70°C
–40°C to +85°C
POWER SUPPLY
Maximum Operating Voltage 25°C 5 16.5 V
0°C to 70°C 16.5
–40°C to +85°C 16.5
Minimum Operating Voltage 25°C 2.7 5 V
0°C to 70°C 2.7
–40°C to +85°C 2.7
Maximum Quiescent Current 25°C 0.75 0.9 mA
0°C to 70°C 0.98
–40°C to +85°C 1.0
Minimum Quiescent Current 25°C 0.6 0.75 mA
0°C to 70°C 0.57
–40°C to +85°C 0.55
Power-Supply Rejection (+PSRR) VS+ = 5.5 V to 4.5 V, VS– = 0 V 25°C 80 100 dB
0°C to 70°C 75
–40°C to +85°C 75
Power-Supply Rejection (–PSRR) VS+ = 5 V, VS– = 0 V to 1.0 V 25°C 80 100 dB
0°C to 70°C 75
–40°C to +85°C 75

6.7 Electrical Characteristics, VS = ±5 V

At G = +2, RF = 2.49 kΩ, and RL = 1 kΩ, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
Small-Signal Bandwidth G = +1, VO = 100 mVPP, RF = 34 Ω 95 MHz
G = +2, VO = 100 mVPP 40 MHz
G = +5, VO = 100 mVPP 8 MHz
G = +10, VO = 100 mVPP 3.8 MHz
0.1-dB Flat Bandwidth G = +2, VO = 100 mVPP 20 MHz
Full-Power Bandwidth G = +1, VO = 2 VPP 9.5 MHz
Slew Rate G = +1, VO = 2-V Step 35 V/μs
G = –1, VO = 2-V Step 35 V/μs
Settling Time to 0.1% G = –1, VO = 2-V Step 78 ns
Settling Time to 0.01% G = –1, VO = 2-V Step 140 ns
Rise/Fall Times G = +1, VO = 2-V Step 45 ns
AC PERFORMANCE— HARMONIC DISTORTION
Second Harmonic Distortion G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ –69 dBc
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ –76
Third Harmonic Distortion G = +2, VO = 2 VPP, f = 1 MHz, RL = 1 kΩ –93 dBc
G = +2, VO = 2 VPP, f = 100 kHz, RL = 1 kΩ –107
THD + N G = +2, VO = 2 VPP, VO = 2 VPP, f = 10 kHz 0.0009
G = +2, VO = 2 VPP, VO = 4 VPP, f = 10 kHz 0.0003%
Differential Gain (NTSC/PAL) G = +2, RL = 150 Ω 0.03/0.03%
Differential Phase (NTSC/PAL) 0.08/0.1 º
Input Voltage Noise f = 100 kHz 12.5 nV/√Hz
Input Current Noise f = 100 kHz 1.5 pA/√Hz
DC PERFORMANCE
Open-Loop Voltage Gain (AOL) 25°C 90 108 dB
0°C to 70°C 85
–40°C to +85°C 85
Input Offset Voltage VCM = 0 V 25°C 0.5 2.5 mV
0°C to 70°C 3.5
–40°C to +85°C 3.5
Average Offset Voltage Drift VCM = 0 V 0°C to 70°C ±7 μV/°C
–40°C to +85°C ±7
Input Bias Current VCM = 0 V 25°C 0.5 0.8 μA
0°C to 70°C 1
–40°C to +85°C 1
Average Bias Current Drift VCM = 0 V 0°C to 70°C ±2 nA/°C
–40°C to +85°C ±2
Input Offset Current VCM = 0 V 25°C 0.1 0.4 μA
0°C to 70°C 0.5
–40°C to +85°C 0.5
Average Offset Current Drift VCM = 0 V 0°C to 70°C ±2 nA/°C
–40°C to +85°C ±2
INPUT CHARACTERISTICS
Common-Mode Input Range 25°C ±5.3 ±5.4 V
0°C to 70°C ±5.1
–40°C to +85°C ±5.1
Common-Mode Rejection Ratio VCM = –5 V to +5 V 25°C 90 107 dB
0°C to 70°C 85
–40°C to +85°C 85
Input Resistance Common-mode 100 MΩ
Input Capacitance Common-mode/Differential 0.8/1.2 pF
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 10 kΩ ±4.93 V
RL = 1 kΩ 25°C ±4.6 ±4.8 V
0°C to 70°C ±4.5
–40°C to +85°C ±4.5
Output Current (Sourcing) RL = 10 Ω 25°C 35 48 mA
0°C to 70°C 30
–40°C to +85°C 30
Output Current (Sinking) RL = 10 Ω 25°C 45 60 mA
0°C to 70°C 40
–40°C to +85°C 40
Output Impedance f = 1 MHz 1 Ω
POWER SUPPLY
Maximum Operating Voltage 25°C ±5 ±8.25 V
0°C to 70°C ±8.25
–40°C to +85°C ±8.25
Minimum Operating Voltage 25°C ±1.35 ±5 V
0°C to 70°C ±1.35
–40°C to +85°C ±1.35
Maximum Quiescent Current 25°C 0.8 0.93 mA
0°C to 70°C 1.0
–40°C to +85°C 1.05
Minimum Quiescent Current 25°C 0.67 0.8 mA
0°C to 70°C 0.62
–40°C to +85°C 0.6
Power-Supply Rejection (+PSRR) VS+ = 5.5 V to 4.5 V, VS– = 5.0 V 25°C 80 100 dB
0°C to 70°C 75
–40°C to +85°C 75
Power-Supply Rejection (–PSRR) VS+ = 5 V, VS– = –5.5 V to –4.5 V 25°C 80 100 dB
0°C to 70°C 75
–40°C to +85°C 75

6.8 Dissipation Ratings

PACKAGE POWER RATING(1)
TA < +25°C TA = +85°C
DBV (5) 391 mW 156 mW
D (8) 1.02 W 410 mW
DGK (8) 553 mW 221 mW
(1) Power rating is determined with a junction temperature of +125°C. This is the point where distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or below +125°C for best performance and long term reliability.

6.9 Typical Characteristics

THS4281 tc_qc_vcc_los432.png
Figure 1. Quiescent Current vs Supply Voltage
THS4281 tc_vos2_los432.png
VS = ±5 V
Figure 3. Input Offset Voltage vs Common-Mode Input Voltage
THS4281 tc_pvh_io_los432.png
Figure 5. Positive Voltage Headroom vs Source Current
THS4281 tc_vo3_rl_los432.png
VS = 5 V
Figure 7. Output Voltage vs Load Resistance
THS4281 tc_vo_rl_los432.png
VS = 15 V)
Figure 9. Output Voltage vs Load Resistance
THS4281 tc_f_res2_los432.gif
VS = 2.7 V
Figure 11. Frequency Response
THS4281 tc_fr_g2_los432.png
VS = 5 V
Figure 13. Frequency Response
THS4281 tc_flatnes_los432.png
VS = 2.7 V VS = 3 V
Figure 15. 0.1-dB Frequency Response
THS4281 tc_f_res3_los432.gif
VS = 2.7 V
Figure 17. Frequency Response
THS4281 tc_f_res7_los432.png
VS = 5 V
Figure 19. Frequency Response
THS4281 tc_f_res9_los432.png
VS = 15 V
Figure 21. Frequency Response
THS4281 tc_f_res5_los432.png
VS = 5 V
Figure 23. Large-Signal Frequency Response
THS4281 tc_g_f_los432.png Figure 25. Open-Loop Gain vs Frequency
THS4281 tc_rr_f_los432.png
Figure 27. Rejection Ratio vs Frequency
THS4281 tc_sr3_vo_los432.png
VS = 2.7 V
Figure 29. Slew Rate
THS4281 tc_sr4_vo_los432.png
VS = ±5 V
Figure 31. Slew Rate
THS4281 tc_st1_los432.png
VS = ±1.35 V
Figure 33. Settling Time
THS4281 tc_st2_los432.png
VS = ±2.5 V
Figure 35. Settling Time
THS4281 tc_st_los432.png
VS = ±5 V
Figure 37. Settling Time
THS4281 tc_hd_f5_los432.png
Gain = +1
Figure 39. Harmonic Distortion vs Frequency
THS4281 tc_hd_f4_los432.png
VS = 3 V, 3.3 V
Figure 41. Harmonic Distortion vs Frequency
THS4281 tc_hd_f8_los432.png
Gain = +2
Figure 43. Harmonic Distortion vs Frequency
THS4281 tc_hd_vo_los432.png
\
VS = 2.7 V, 5 V
Figure 45. Harmonic Distortion vs Output Voltage
THS4281 tc_hd_vo3_los432.png
VS = 3.3 V, 15 V
Figure 47. Harmonic Distortion vs Output Voltage
THS4281 tc_thdn3_f_los432.png
VS = 3 V
Figure 49. Total Harmonic Distortion + Noise vs Frequency
THS4281 tc_thdn4_f_los432.png
VS = ±5 V
Figure 51. Total Harmonic Distortion + Noise vs Frequency
THS4281 tc_thdn_vo_los432.png
f = 1 kHz
Figure 53. Total Harmonic Distortion + Noise vs Output Voltage
THS4281 tc_thdn_vo2_los432.png
f = 100 kHz
Figure 55. Total Harmonic Distortion + Noise vs Output Voltage
THS4281 tc_diff_p2_los432.gif
VS = 5 V
Figure 57. Differential Phase vs Number of Loads
THS4281 tc_diff_p_los432.gif
VS = ±5 V
Figure 59. Differential Phase vs Number of Loads
THS4281 tc_ib2_tc_los432.png
VS = 5 V
Figure 61. Input Bias and Offset Current vs Temperature
THS4281 tc_ss_tran_los432.png
Figure 63. Small-Signal Transient Response
THS4281 tc_od_rec2_los432.png
VS = 5 V
Figure 65. Overdrive Recovery Time
THS4281 tc_ovr_drv_los432.png
Figure 67. Overdrive Response Output Voltage vs Time
THS4281 tc_vos_los432.png
VS = 3 V VS = 5 V
Figure 2. Input Offset Voltage vs Common-mode Input Voltage
THS4281 tc_vos3_los432.png
VS = 15 V
Figure 4. Input Offset Voltage vs Common-Mode Input Voltage
THS4281 tc_nvh_io_los432.png
Figure 6. Negative Voltage Headroom vs Sink Current
THS4281 tc_vo2_rl_los432.png
VS = ±5 V
Figure 8. Output Voltage vs Load Resistance
THS4281 tc_f_res_los432.gif
Figure 10. Frequency Response
THS4281 tc_fr2_g2_los432.png
VS = 3 V
Figure 12. Frequency Response
THS4281 tc_fr3_g2_los432.png
VS = ±5 V
Figure 14. Frequency Response
THS4281 tc_flatnes2_los432.png
VS = 5 V, ±5 V, 15 V
Figure 16. 0.1-dB Frequency Response
THS4281 tc_fr_los432.png
VS = 3 V
Figure 18. Frequency Response
THS4281 tc_f_res8_los432.png
VS = ±5 V
Figure 20. Frequency Response
THS4281 tc_f_res6_los432.png
VS = 2.7 V
Figure 22. Large-Signal Frequency Response
THS4281 tc_f_res4_los432.png
VS = ±5 V
Figure 24. Large-Signal Frequency Response
THS4281 tc_zo_f_los432.png Figure 26. Output Impedance vs Frequency
THS4281 tc_noise_f_los432.png
Figure 28. Noise vs Frequency
THS4281 tc_sr2_vo_los432.png
VS = 5 V
Figure 30. Slew Rate
THS4281 tc_sr_vo_los432.png
VS = 15 V
Figure 32. Slew Rate
THS4281 tc_st_e1_los432.png
VS = ±1.35 V
Figure 34. Settling Time
THS4281 tc_st_e2_los432.png
VS = ±2.5 V
Figure 36. Settling Time
THS4281 tc_st_e_los432.png
VS = ±5 V
Figure 38. Settling Time
THS4281 tc_hd_f6_los432.png
Gain = +1
Figure 40. Harmonic Distortion vs Frequency
THS4281 tc_hd_f7_los432.png
Gain = +2
Figure 42. Harmonic Distortion vs Frequency
THS4281 tc_hd_rl_los432.png Figure 44. Harmonic Distortion vs Load Resistance
THS4281 tc_hd_vo2_los432.png
VS = 3 V, ±5 V
Figure 46. Harmonic Distortion vs Output Voltage
THS4281 tc_thdn_f_los432.png
VS = 2.7 V
Figure 48. Total Harmonic Distortion + Noise vs Frequency
THS4281 tc_thdn2_f_los432.png
VS = 5 V
Figure 50. Total Harmonic Distortion + Noise vs Frequency
THS4281 tc_thdn5_f_los432.png
VS = 15 V
Figure 52. Total Harmonic Distortion + Noise vs Frequency
THS4281 tc_thdn_vo3_los432.png
f = 10 kHz
Figure 54. Total Harmonic Distortion + Noise vs Output Voltage
THS4281 tc_diff_g2_los432.gif
VS = 5 V
Figure 56. Differential Gain vs Number of Loads
THS4281 tc_diff_g_los432.gif
VS = ±5 V
Figure 58. Differential Gain vs Number of Loads
THS4281 tc_vos_tc_los432.png
Figure 60. Input Offset Voltage vs Temperature
THS4281 tc_ib_tc_los432.png
VS = 15 V
Figure 62. Input Bias and Offset Current vs Temperature
THS4281 tc_ls_tran_los432.png
Figure 64. Large-Signal Transient Response
THS4281 tc_od_rec_los432.png
VS = ±5 V
Figure 66. Overdrive Recovery Time