SLVS037O September   1989  – December 2020 TL7702B , TL7705B , TL7733B

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: TL77xxBC, TL77xxBI, and TL7705BQ
    6. 6.6 Switching Characteristics: TL77xxBC, TL77xxBI, and TL7705BQ
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Wide Supply-Voltage Range
      2. 8.3.2 Adjustable Pulse Duration
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
  • P|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1)(2) TL77xxB UNIT
D (SOIC) P (PDIP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 109.2 51.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56 40.6 °C/W
RθJB Junction-to-board thermal resistance 49.9 28.6 °C/W
ψJT Junction-to-top characterization parameter 11.4 17.7 °C/W
ψJB Junction-to-board characterization parameter 49.4 28.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) Maximum power dissipation is a function of TJ(max), RθJA , and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA) / RθJA. Operating at the absolute maximum TJ of 150°C can affect reliability.