SLVS647J August   2006  – May 2025 TLE4275-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Diagrams
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Power-Good Reset (RESET)
      2. 7.3.2 Adjustable Power-Good RESET Delay Timer (DELAY)
        1. 7.3.2.1 Setting the Adjustable Power-Good Reset Delay
      3. 7.3.3 Undervoltage Lockout
      4. 7.3.4 Current Limit
      5. 7.3.5 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Selection
        1. 8.1.1.1 Legacy Chip Capacitor Selection
        2. 8.1.1.2 New Chip Capacitor Selection
          1. 8.1.1.2.1 Output Capacitor
          2. 8.1.1.2.2 Input Capacitor
      2. 8.1.2 Dropout Voltage
      3. 8.1.3 Reverse Current
      4. 8.1.4 Power Dissipation (PD)
        1. 8.1.4.1 Thermal Performance Versus Copper Area
        2. 8.1.4.2 Power Dissipation Versus Ambient Temperature
      5. 8.1.5 Estimating Junction Temperature
      6. 8.1.6 Setting the Adjustable Power-Good Reset Delay
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Device Nomenclature
      2. 9.1.2 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|5
  • PWP|20
  • KVU|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1.3 Reverse Current

Excessive reverse current damages this device. Reverse current flows through the intrinsic body diode of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current occurs are outlined in this section, all of which exceed the absolute maximum rating of VOUT ≤ VIN + 0.3V.

  • If the device has a large COUT and the input supply collapses with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If reverse current flow is expected in the application, external protection is recommended to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated.