SBOS947A July   2019  – June 2020 TLV2186


  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      High-Side Current Shunt Monitor Application
      2.      VOS vs Input Common Mode Voltage
  4. Revision History
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Rail-to-Rail Inputs
      2. 7.3.2 Phase-Reversal Protection
      3. 7.3.3 Input Bias Current Clock Feedthrough
      4. 7.3.4 EMI Rejection
        1. EMIRR +IN Test Configuration
      5. 7.3.5 Electrical Overstress
      6. 7.3.6 MUX-Friendly Inputs
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Basic Noise Calculations
    2. 8.2 Typical Applications
      1. 8.2.1 High-Side Current Sensing
        1. Design Requirements
        2. Detailed Design Procedure
        3. Application Curve
      2. 8.2.2 Bridge Amplifier
      3. 8.2.3 Low-Side Current Monitor
      4. 8.2.4 RTD Amplifier With Linearization
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. TINA-TI (Free Software Download)
        2. TI Precision Designs
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

EMI Rejection

The TLV2186 uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI interference from sources such as wireless communications and densely-populated boards with a mix of analog signal chain and digital components. EMI immunity can be improved with circuit design techniques; the TLV2186 benefits from these design improvements. Texas Instruments has developed the ability to accurately measure and quantify the immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to 6 GHz. Figure 40 shows the results of this testing on the TLV2186. Table 2 lists the EMIRR +IN values for the TLV2186 at particular frequencies commonly encountered in real-world applications. Applications listed in Table 2 may be centered on or operated near the particular frequency shown. Detailed information can also be found in the EMI Rejection Ratio of Operational Amplifiers (SBOA128), available for download from

TLV2186 D014_EMIRR.gifFigure 40. EMIRR Testing

Table 2. TLV2186 EMIRR IN+ for Frequencies of Interest

400 MHz Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF) applications 48.4 dB
900 MHz Global system for mobile communications (GSM) applications, radio communication, navigation, GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications 52.8 dB
1.8 GHz GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz) 69.1 dB
2.4 GHz 802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz) 88.9 dB
3.6 GHz Radiolocation, aero communication and navigation, satellite, mobile, S-band 82.5 dB
5 GHz 802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite operation, C-band (4 GHz to 8 GHz) 95.5 dB

The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of operational amplifiers. An adverse effect that is common to many op amps is a change in the offset voltage as a result of RF signal rectification. An op amp that is more efficient at rejecting this change in offset as a result of EMI has a higher EMIRR and is quantified by a decibel value. Measuring EMIRR can be performed in many ways, but this section provides the EMIRR +IN, which specifically describes the EMIRR performance when the RF signal is applied to the noninverting input pin of the op amp. In general, only the noninverting input is tested for EMIRR for the following three reasons:

  • Op amp input pins are known to be the most sensitive to EMI, and typically rectify RF signals better than the supply or output pins.
  • The noninverting and inverting op amp inputs have symmetrical physical layouts and exhibit nearly matching EMIRR performance
  • EMIRR is more simple to measure on noninverting pins than on other pins because the noninverting input terminal can be isolated on a PCB. This isolation allows the RF signal to be applied directly to the noninverting input terminal with no complex interactions from other components or connecting PCB traces.

High-frequency signals conducted or radiated to any pin of the operational amplifier may result in adverse effects, as the amplifier would not have sufficient loop gain to correct for signals with spectral content outside the bandwidth. Conducted or radiated EMI on inputs, power supply, or output may result in unexpected dc offsets, transient voltages, or other unknown behavior. Take care to properly shield and isolate sensitive analog nodes from noisy radio signals and digital clocks and interfaces.

The EMIRR +IN of the TLV2186 is plotted versus frequency as shown in Figure 40. The TLV2186 unity-gain bandwidth is 750 kHz. EMIRR performance below this frequency denotes interfering signals that fall within the op amp bandwidth.