SLOS168G November   1996  – July 2025 TLV2432 , TLV2432A , TLV2434 , TLV2434A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Description
  4. 3Pin Configuration and Functions
  5. 4Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  Dissipation Ratings
    3. 4.3  Recommended Operating Conditions
    4. 4.4  Electrical Characteristics, VDD = 3 V, I and C Suffixes
    5. 4.5  Operating Characteristics, VDD = 3 V, I and C Suffixes
    6. 4.6  Electrical Characteristics, VDD = 3 V, Q Suffix
    7. 4.7  Operating Characteristics, VDD = 3 V, Q Suffix
    8. 4.8  Electrical Characteristics, VDD = 5 V, I and C Suffixes
    9. 4.9  Operating Characteristics, VDD = 5 V, C and I Suffixes
    10. 4.10 Electrical Characteristics, VDD = 5 V, Q Suffix
    11. 4.11 Operating Characteristics, VDD = 5 V, Q Suffix
    12. 4.12 Typical Characteristics
  6. 5Detailed Description
    1. 5.1 Overview
    2. 5.2 Functional Block Diagram
  7. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Support Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Electrostatic Discharge Caution

TLV2432 TLV2432A TLV2434 TLV2434A This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.