SLOS922A September   2015  – December 2015 TLV27L2-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Selection Guide
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Offset Voltage
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 General Configurations
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Shunt Resistor (RSHUNT)
        2. 9.2.2.2 Operational Amplifiers
        3. 9.2.2.3 Reference Voltage Resistors (R5-R6)
        4. 9.2.2.4 Difference Amplifier Gain Setting Resistors (R1-R4)
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 General Power Dissipation Considerations
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resource
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VS Supply voltage 16.5 V
VI Input voltage(2) VS V
VID Differential input voltage VS V
IO Output current 100 mA
Continuous total power dissipation See the Thermal Information Table
TJ Maximum junction temperature 150 °C
TA Operating free-air temperature –40 125 °C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 °C
Tstg Storage temperature –65 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Relative to the V–.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

MIN MAX UNIT
VS Supply voltage Dual supply ±1.35 ±8 V
Single supply 2.7 16
Input common-mode voltage –0.2 VS – 1.2 V
TA Operating free-air temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TLV27L2-Q1 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance 122.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 70.5 °C/W
RθJB Junction-to-board thermal resistance 62.5 °C/W
ψJT Junction-to-top characterization parameter 22.3 °C/W
ψJB Junction-to-board characterization parameter 62.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

at recommended operating conditions, VS = 2.7 V, 5 V, and 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA(1) MIN TYP MAX UNIT
DC PERFORMANCE
VIO Input offset voltage VIC = VS / 2, VO = VS / 2,
RL = 100 kΩ, RS = 50 Ω		 25°C 0.5 5 mV
Full range 7
αVIO Offset voltage drift VIC = VS / 2, VO = VS / 2,
RL = 100 kΩ, RS = 50 Ω		 25°C 1.1 µV/°C
CMRR Common-mode rejection ratio VIC = 0 V to VS – 1.2 V, RS = 50 Ω 25°C 71 86 dB
Full range 70
AVD Large-signal differential voltage amplification VO(PP) = VS / 2,
RL = 100 kΩ, 		VS = 2.7 V, 5 V 25°C 80 100 dB
Full range 77
VS = ±5 V 25°C 77 82
Full range 74
INPUT CHARACTERISTICS
IIO Input offset current VIC = VS / 2, VO = VS / 2,
RL = 100 kΩ, RS = 50 Ω		 ≤ 25°C 1 60 pA
≤ 70°C 100
≤ 125°C 1000
IIB Input bias current VIC = VS / 2, VO = VS / 2,
RL = 100 kΩ, RS = 50 Ω		 ≤ 25°C 1 60 pA
≤ 70°C 200
≤ 125°C 1000
ri(d) Differential input resistance ≤ 25°C 1000 GΩ
CIC Common-mode input capacitance f = 1 kHz ≤ 25°C 8 pF
POWER SUPPLY
IQ Quiescent current (per channel) VO = VS/2 25°C 7 11 µA
Full range 16
PSRR Power supply rejection ratio
(ΔVS/ΔVIO)		 No load, VS = 2.7 V to 16 V,
VIC = VS / 2 V		 25°C 74 82 dB
Full range 70
OUTPUT CHARACTERISTICS
VO Output voltage swing from rail VIC = VS / 2,
IOL = 100 µA		 VS = 2.7 V 25°C 160 200 mV
Full range 220
VS = 5 V 25°C 85 120
Full range 200
VS = ±5 V 25°C 50 120
Full range 150
VIC = VS / 2,
IOL = 500 µA		 VS = 5 V 25°C 420 800
Full range 900
VS = ±5 V 25°C 200 400
Full range 500
IO Output current VO = 0.5 V from rail, VS = 2.7 V 25°C 400 µA
DYNAMIC PERFORMANCE
GBP Gain bandwidth product RL = 100 kΩ, CL = 10 pF, f = 1 kHz 25°C 160 kHz
SR Slew rate at unity gain VO(pp) = 1 V, RL = 100 kΩ,
CL = 50 pF		 25°C 0.06 V/µs
–40°C 0.05
125°C 0.8
φM Phase margin RL = 100 kΩ, CL = 50 pF 25°C 62 °
ts Settling time (0.1%) V(STEP)pp = 1 V, AV = –1, rise 25°C 62 µs
CL = 50 pF, RL = 100 kΩ, fall 44
NOISE AND DISTORTION PERFORMANCE
Vn Equivalent input noise voltage f = 1 kHz 25°C 89 nV/√Hz
In Equivalent input noise current f = 1 kHz 25°C 0.6 nV/√Hz
(1) Full range is –40°C to 125°C for I suffix.

7.6 Typical Characteristics

Table 1. Table of Graphs

FIGURE
Input offset voltage (VIO) vs Common-mode input voltage (VIC) Figure 1, Figure 2, Figure 3
Input bias and offset current (IIB and IIO) vs Free-air temperature (TA) Figure 4
High-level output voltage (VOH) vs High-level output current (IOH) Figure 5, Figure 7, Figure 9
Low-level output voltage (VOL) vs Low-level output current (IOL) Figure 6, Figure 8, Figure 10
Quiescent current (IQ) vs Supply voltage (VS) Figure 11
vs Free-air temperature (TA) Figure 12
Supply voltage and supply current ramp up Figure 13
Differential voltage gain and phase shift (AVD) vs Frequency (f) Figure 14
Gain-bandwidth product (GBP) vs Free-air temperature (TA) Figure 15
Phase margin (φm) vs Load capacitance (CL) Figure 16
Common-mode rejection ratio (CMRR) vs Frequency (f) Figure 17
Power supply rejection ratio (PSRR) vs Frequency (f) Figure 18
Input referred noise voltage vs Frequency (f) Figure 19
Slew rate (SR) vs Free-air temperature (TA) Figure 20
Peak-to-peak output voltage (VO(PP)) vs Frequency (f) Figure 21
Inverting small-signal response Figure 22
Inverting large-signal response Figure 23
Crosstalk vs Frequency (f) Figure 24
TLV27L2-Q1 typ1_los378.gif
VS = 2.7 V TA = 25°C
Figure 1. Input Offset Voltage vs Common-Mode Input Voltage
TLV27L2-Q1 typ2_los378.gif
VS = 5 V TA = 25°C
Figure 2. Input Offset Voltage vs Common-Mode Input Voltage
TLV27L2-Q1 typ3_los378.gif
VS = ±5 VDC TA = 25°C
Figure 3. Input Offset Voltage vs Common-Mode Input Voltage
TLV27L2-Q1 typ5_los378.gif
Figure 5. High-Level Output Voltage vs High-Level Output Current
TLV27L2-Q1 typ7_los378.gif
VS = 5 V
Figure 7. High-Level Output Voltage vs High-Level Output Current
TLV27L2-Q1 typ9_los378.gif
VS = 2.7 V
Figure 9. High-Level Output Voltage vs High-Level Output Current
TLV27L2-Q1 typ11_los378.gif
Figure 11. Quiescent Current vs Supply Voltage
TLV27L2-Q1 typ13_los378.gif
VS = 0 to 15 V RL = 100 Ω CL = 10 pF
TA = 25°C
Figure 13. Supply Voltage and Supply Current Ramp Up
TLV27L2-Q1 typ15_los378.gif
Figure 15. Gain-Bandwidth Product vs Free-Air Temperature
TLV27L2-Q1 typ17_los378.gif
VS = 5 V TA = 25°C
Figure 17. Common-Mode Rejection Ratio vs Frequency
TLV27L2-Q1 typ19_los378.gif
VS = 5 V G = 2 RF = 100 kΩ
Figure 19. Input Referred Noise Voltage vs Frequency
TLV27L2-Q1 typ21_los378.gif
RL = 100 kΩ CL = 10 pF THD+N ≤ 5%
Figure 21. Peak-to-Peak Output Voltage vs Frequency
TLV27L2-Q1 typ23_los378.gif
VS = 5 V G = –1 VO = 100 mVPP
RL = 100 kΩ CL = 10 pF f = 1 kHz
Figure 23. Inverting Large-Signal Response
TLV27L2-Q1 typ4_los378.gif
VS = 5 V VIC = 2.5 V VO = 2.5 V
Figure 4. Input Bias And Input Offset Current vs Free-Air Temperature
TLV27L2-Q1 typ6_los378.gif
VS = ±5 V
Figure 6. Low-Level Output Voltage vs Low-Level Output Current
TLV27L2-Q1 typ8_los378.gif
VS = 5 V
Figure 8. Low-Level Output Voltage vs Low-Level Output Current
TLV27L2-Q1 typ10_los378.gif
VS = 2.7 V
Figure 10. Low-Level Output Voltage vs Low-Level Output Current
TLV27L2-Q1 typ12_los378.gif
Figure 12. Quiescent Current vs Free-Air Temperature
TLV27L2-Q1 typ14_los378.gif
VS = 5 V RL = 100 Ω CL = 10 pF
TA = 25°C
Figure 14. Differential Voltage Gain and Phase Shift vs Frequency
TLV27L2-Q1 typ16_los378.gif
VS = 5 V RL = 100 kΩ TA = 25°C
Figure 16. Phase Margin vs Load Capacitance
TLV27L2-Q1 typ18_los378.gif
VS = ±2.5 V TA = 25°C
Figure 18. Power Supply Rejection Ratio vs Frequency
TLV27L2-Q1 typ20_los378.gif
VS = 5 V G = 1 VO = 1 V
RL = 100 kΩ CL = 50 pF
Figure 20. Slew Rate vs Free-Air Temperature
TLV27L2-Q1 typ22_los378.gif
VS = 5 V G = –1 VO = 3 VPP
RL = 100 kΩ CL = 10 pF f = 1 kHz
Figure 22. Inverting Small-Signal Response
TLV27L2-Q1 typ24_los378.gif
VS = 5 V G = –1 TA = 25°C
RL = 2 kΩ CL = 10 pF Channel 1 to 2
Figure 24. Crosstalk vs Frequency