SNOSD26 May 2016 TLV521
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Any pin relative to V– | −0.3 | 6 | V | |
IN+, IN–, OUT Pins | V– – 0.3 V | V+ + 0.3 V | V | |
V+, V–, OUT Pins | 40 | mA | ||
Differential Input Voltage (VIN+ - VIN–) | –300 | 300 | mV | |
Junction Temperature | –40 | 150 | °C | |
Mounting Temperature | Infrared or Convection (30 sec.) | 260 | °C | |
Wave Soldering Lead Temp. (4 sec.) | 260 | °C | ||
Storage temperature, Tstg | −65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
Machine Model | ±200 |
MIN | MAX | UNIT | |
---|---|---|---|
Temperature Range | −40 | 125 | °C |
Supply Voltage (VS = V+ - V−) | 1.7 | 5.5 | V |
THERMAL METRIC(1) | TLV521 | UNIT | |
---|---|---|---|
DCK (SC70) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 269.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 93.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 48.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 2 | °C/W |
ψJB | Junction-to-board characterization parameter | 47.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOS | Input Offset Voltage | VCM = 0.3 V | –3 | 0.1 | 3 | mV |
VCM = 3 V | –3 | 0.1 | 3 | |||
TCVOS | Input Offset Voltage Drift | ±1.5 | μV/°C | |||
IBIAS | Input Bias Current | 1 | pA | |||
IOS | Input Offset Current | 50 | fA | |||
CMRR | Common Mode Rejection Ratio | 0 V ≤ VCM ≤ 3.3 V | 70 | 90 | dB | |
0 V ≤ VCM ≤ 2.2 V | 100 | |||||
PSRR | Power Supply Rejection Ratio | V+ = 1.8 V to 3.3 V; VCM = 0.3 V | 80 | 100 | dB | |
CMVR | Common Mode Voltage Range | CMRR ≥ 70 dB | 0 | 3.3 | V | |
AVOL | Large Signal Voltage Gain | VO = 0.5 V to 2.8 V RL = 100 kΩ to V+/2 |
80 | 110 | dB | |
VO | Output Swing High | RL = 100 kΩ to V+/2 VIN(diff) = 100 mV |
3 | 50 | mV from either rail | |
Output Swing Low | RL = 100 kΩ to V+/2 VIN (diff) = −100 mV |
2 | 50 | |||
IO | Output Current | Sourcing, VO to V−
VIN(diff) = 100 mV |
11 | mA | ||
Sinking, VO to V+
VIN(diff) = −100 mV |
12 | |||||
IS | Supply Current | VCM = 0.3 V | 350 | 500 | nA |
PARAMETER | TEST CONDITIONS | MIN (2) |
TYP (3) |
MAX (2) |
UNIT | ||
---|---|---|---|---|---|---|---|
GBW | Gain-Bandwidth Product | CL = 20 pF, RL = 100 kΩ | 6 | kHz | |||
SR | Slew Rate | AV = +1, VIN = 0 V to 3.3 V |
Falling Edge | 2.9 | V/ms | ||
Rising Edge | 2.5 | ||||||
θ m | Phase Margin | CL = 20 pF, RL = 100 kΩ | 73 | deg | |||
Gm | Gain Margin | CL = 20 pF, RL = 100 kΩ | 19 | dB | |||
en | Input-Referred Voltage Noise Density | f = 100 Hz | 300 | nV/√Hz | |||
Input-Referred Voltage Noise | 0.1 Hz to 10 Hz | 22 | μVPP | ||||
In | Input-Referred Current Noise | f = 100 Hz | 100 | fA/√Hz | |||
EMIRR | EMI Rejection Ratio, IN+ and IN−(4) | VRF_PEAK = 100 mVP (−20 dBP), f = 400 MHz |
121 | dB | |||
VRF_PEAK = 100 mVP (−20 dBP), f = 900 MHz |
121 | ||||||
VRF_PEAK = 100 mVP (−20 dBP), f = 1800 MHz |
124 | ||||||
VRF_PEAK = 100 mVP (−20 dBP), f = 2400 MHz |
142 |