Product details

Number of channels (#) 1 Total supply voltage (Max) (+5V=5, +/-5V=10) 5.5 Total supply voltage (Min) (+5V=5, +/-5V=10) 1.7 Rail-to-rail In, Out GBW (Typ) (MHz) 0.006 Slew rate (Typ) (V/us) 0.0029 Vos (offset voltage @ 25 C) (Max) (mV) 3 Iq per channel (Typ) (mA) 0.00035 Vn at 1 kHz (Typ) (nV/rtHz) 300 Rating Catalog Operating temperature range (C) -40 to 125 Offset drift (Typ) (uV/C) 1.5 Features Cost Optimized, EMI Hardened CMRR (Typ) (dB) 100 Output current (Typ) (mA) 12 Architecture CMOS
Number of channels (#) 1 Total supply voltage (Max) (+5V=5, +/-5V=10) 5.5 Total supply voltage (Min) (+5V=5, +/-5V=10) 1.7 Rail-to-rail In, Out GBW (Typ) (MHz) 0.006 Slew rate (Typ) (V/us) 0.0029 Vos (offset voltage @ 25 C) (Max) (mV) 3 Iq per channel (Typ) (mA) 0.00035 Vn at 1 kHz (Typ) (nV/rtHz) 300 Rating Catalog Operating temperature range (C) -40 to 125 Offset drift (Typ) (uV/C) 1.5 Features Cost Optimized, EMI Hardened CMRR (Typ) (dB) 100 Output current (Typ) (mA) 12 Architecture CMOS
SOT-SC70 (DCK) 5 4 mm² 2 x 2.1
  • Unmatched Price Performance
  • For VS = 3.3 V, Typical Unless Otherwise Noted
    • Ultra-low Supply Current
      • 350 nA Typical, 500 nA Maximum
    • Wide Operating Voltage Range 1.7 V to 5.5 V
    • Low TCVOS 1.5 µV/°C
    • VOS 3 mV (Max)
    • Input Bias Current 1 pA
    • PSRR 100 dB
    • CMRR 90 dB
    • Open-Loop Gain 110 dB
    • Gain Bandwidth Product 6 kHz
    • Slew Rate 2.5 V/ms
    • Input Voltage Noise at f = 100 Hz 300 nV/√Hz
    • Temperature Range –40ºC to 125°C
    • Rail to Rail Input and Output (RRIO)
  • Unmatched Price Performance
  • For VS = 3.3 V, Typical Unless Otherwise Noted
    • Ultra-low Supply Current
      • 350 nA Typical, 500 nA Maximum
    • Wide Operating Voltage Range 1.7 V to 5.5 V
    • Low TCVOS 1.5 µV/°C
    • VOS 3 mV (Max)
    • Input Bias Current 1 pA
    • PSRR 100 dB
    • CMRR 90 dB
    • Open-Loop Gain 110 dB
    • Gain Bandwidth Product 6 kHz
    • Slew Rate 2.5 V/ms
    • Input Voltage Noise at f = 100 Hz 300 nV/√Hz
    • Temperature Range –40ºC to 125°C
    • Rail to Rail Input and Output (RRIO)

The TLV521 350 nA nanopower op amp offers optimum price performance in TI’s nanopower family of operational amplifiers. The TLV521 has a carefully designed CMOS input stage enabling very low Ibias of 1 pA, thereby reducing IBIAS and IOS errors that would otherwise impact sensitive applications like Megaohm resistance, high-impedance photodiode and charge sense situations. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources like mobile phones and RFID readers.

The TLV521 is offered in the 5-pin SC70 package, and operates from –40°C to 125°C.

The TLV521 350 nA nanopower op amp offers optimum price performance in TI’s nanopower family of operational amplifiers. The TLV521 has a carefully designed CMOS input stage enabling very low Ibias of 1 pA, thereby reducing IBIAS and IOS errors that would otherwise impact sensitive applications like Megaohm resistance, high-impedance photodiode and charge sense situations. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources like mobile phones and RFID readers.

The TLV521 is offered in the 5-pin SC70 package, and operates from –40°C to 125°C.

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Technical documentation

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Type Title Date
* Data sheet TLV521 NanoPower, 350nA, RRIO, CMOS Input, Operational Amplifier datasheet 20 May 2016
Technical article What is an op amp? 21 Jan 2020
Technical article How to lay out a PCB for high-performance, low-side current-sensing designs 06 Feb 2018
Technical article Low-side current sensing for high-performance cost-sensitive applications 22 Jan 2018
Technical article Voltage and current sensing in HEV/EV applications 22 Nov 2017
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 Mar 2017

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