SNIS236 January   2024 TMP119

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Two-Wire Interface Timing
    8. 6.8 Timing Diagram
    9. 6.9 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Up
      2. 7.3.2 Averaging
      3. 7.3.3 Temperature Result and Limits
      4. 7.3.4 Strain Tolerance
    4. 7.4 Device Functional Modes
      1. 7.4.1 Continuous Conversion Mode
      2. 7.4.2 Shutdown Mode (SD)
      3. 7.4.3 One-Shot Mode (OS)
      4. 7.4.4 Therm and Alert Modes
        1. 7.4.4.1 Alert Mode
        2. 7.4.4.2 Therm Mode
    5. 7.5 Programming
      1. 7.5.1 EEPROM Programming
        1. 7.5.1.1 EEPROM Overview
        2. 7.5.1.2 Programming the EEPROM
      2. 7.5.2 Pointer Register
      3. 7.5.3 I2C and SMBus Interface
        1. 7.5.3.1 Serial Interface
          1. 7.5.3.1.1 Bus Overview
          2. 7.5.3.1.2 Serial Bus Address
          3. 7.5.3.1.3 Writing and Reading Operation
          4. 7.5.3.1.4 Target Mode Operations
            1. 7.5.3.1.4.1 Target Receiver Mode
            2. 7.5.3.1.4.2 Target Transmitter Mode
          5. 7.5.3.1.5 SMBus Alert Function
          6. 7.5.3.1.6 General-Call Reset Function
          7. 7.5.3.1.7 Timeout Function
          8. 7.5.3.1.8 Timing Diagrams
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 C-Code Decoding Temperature Data
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Noise and Averaging
        2. 8.2.2.2 Self-Heating Effect (SHE)
        3. 8.2.2.3 Synchronized Temperature Measurements
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
    5. 8.5 Register Map
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YBG|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Programming the EEPROM

To prevent accidental programming, the EEPROM is locked by default. When locked, any I2C writes to the register map locations are performed only on the volatile registers and not on the EEPROM.

Figure 7-8 shows a flow chart describing the EEPROM programming sequence. To program the EEPROM, first unlock the EEPROM by setting the EUN bit in the EEPROM unlock register. After the EEPROM is unlocked, any subsequent I2C writes to the register map locations program a corresponding non-volatile memory location in the EEPROM. Programming a single location typically takes 7ms to complete and consumes 230µA. Do not perform any I2C writes until programming is complete. During programming, the EEPROM_busy flag is set. Read this flag to monitor if the programming is complete. After programming the desired data, issue a general-call reset command to trigger a software reset. The programmed data from the EEPROM are then loaded to the corresponding register map locations as part of the reset sequence. This command also clears the EUN bit and automatically locks the EEPROM to prevent any further accidental programming. Avoid using the device to perform temperature conversions when the EEPROM is unlocked.

GUID-0A7C5F8B-43FB-4D8F-84C5-E7D29293D56F-low.gifFigure 7-8 EEPROM Programming Sequence