SLOS704B January   2011  – August 2015 TPA6138A2

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Operating Characteristics
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Direct Path Headphone Driver
    4. 9.4 Device Functional Modes
      1. 9.4.1 Mute Operation
      2. 9.4.2 Using the TPA6138A2 as a Second-Order Filter
      3. 9.4.3 TPA6138A2 UVP Operation
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Gain-Setting Resistor Ranges
      2. 10.1.2 Input-Blocking Capacitors
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Charge-Pump Flying Capacitor and VSS Capacitor
        2. 10.2.2.2 Decoupling Capacitors
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Gain-Setting Resistors
      2. 12.1.2 Decoupling Capacitors Placement
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Community Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD to GND –0.3 4 V
Input voltage, VI VSS – 0.3 VDD + 0.3 V
Minimum load impedance – line outputs – OUTL, OUTR 12.8 Ω
Mute to GND, UVP to GND –0.3 VDD +0.3 V
Maximum operating junction temperature range, TJ –40 150 °C
Storage temperature range, Tstg –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VDD Power supply DC supply voltage 3 3.3 3.6 V
RL Load impedance 16 32 Ω
VIL Low-level input voltage Mute 40 %VDD
VIH High-level input voltage Mute 60 %VDD
TA Ambient temperature –40 25 85 °C

7.4 Thermal Information

THERMAL METRIC(1) TPA6138A2 UNIT
PW (TSSOP)
14 PINS
RθJA Junction-to-ambient thermal resistance 130 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 49 °C/W
RθJB Junction-to-board thermal resistance 63 °C/W
ψJT Junction-to-top characterization parameter 3.6 °C/W
ψJB Junction-to-board characterization parameter 62 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VDD = 3.3 V, RDL = 32 Ω, Rfb = 30 kΩ, RIN = 15 kΩ, TA = 25°C, Charge pump: CP = 1 µF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|VOS| Output offset voltage VDD = 3.3 V 0.5 1 mV
PSRR Power-supply rejection ratio 80 dB
VOH High-level output voltage VDD = 3.3 V 3.1 V
VOL Low-level output voltage VDD = 3.3 V –3.05 V
VUVP_EX External UVP detect voltage 1.25 V
VUVP_EX_HYSTERESIS External UVP detect hysteresis current 5 µA
fCP Charge-pump switching frequency 200 300 400 kHz
|IIH| High-level input current, Mute VDD = 3.3 V, VIH = VDD 1 µA
|IIL| Low-level input current, Mute VDD = 3.3 V, VIL = 0 V 1 µA
IDD Supply current VDD = 3.3 V, no load, Mute = VDD, no load 5 14 25 mA
VDD = 3.3 V, no load, Mute = GND, disabled 14

7.6 Operating Characteristics

VDD = 3.3 V, RDL = 32 Ω, Rfb = 30 kΩ, RIN = 15 kΩ, TA = 25°C, Charge pump: CP = 1 µF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PO Output power, outputs in phase THD+N = 1%, VDD = 3.3 V, f = 1 kHz, RL = 32 Ω 40 mW
THD+N Total harmonic distortion plus noise VDD = 3.3V, f = 1kHz, RLD = 32Ω, Po = 10mW 0.01%
SNR Signal-to-noise ratio(1) A-weighted 90 96 dB
DNR Dynamic range(2) A-weighted 90 100 dB
VN Noise voltage A-weighted 13 μV
ZO Output Impedance when muted Mute = GND 110
Input-to-output attenuation when muted Mute = GND 80 dB
Crosstalk—L to R, R to L Po = 20 mW –75 dB
ILIMIT Current limit PVDD = 3.3 V 50 mA
(1) SNR is calculated relative to 25-mW output.
(2) DNR is calculated relative to output at 1% THD+N.

7.7 Typical Characteristics

VDD = 3.3 V , TA = 25°C, C(PUMP) = C(VSS) = 1 μF , CIN = 2.2 μF, RIN = 15 kΩ, Rfb = 30 kΩ, ROUT = 10 Ω, COUT = 1 nF (unless otherwise noted)
TPA6138A2 THDN_po_los704.gif
VDD = 3.3 V, RL = 32 Ω
Figure 1. Total Harmonic Distortion and Noise
vs Output Power
TPA6138A2 THDN_f_los704.gif
VDD = 3.3 V, RL = 32 Ω
Figure 3. Total Harmonic Distortion and Noise vs Frequency
TPA6138A2 crosstalk_f_los704.gif
Figure 5. Crosstalk vs Frequency
TPA6138A2 THDN2_po_los704.gif
VDD = 3.3 V, RL = 16 Ω
Figure 2. Total Harmonic Distortion and Noise
vs Output Voltage
TPA6138A2 THDN_f2_los704.gif
VDD = 3.3 V RL = 16 Ω
Figure 4. Total Harmonic Distortion and Noise vs Frequency
TPA6138A2 PSRR_f_los704.gif
Gain = 6dB Vripple = 200 mVpp
Figure 6. Supply Rejection Ratio vs Frequency