SLVSDG4B March 2016 – August 2016 TPD1E04U04
The TPD1E04U04 is a unidirectional ESD Protection Diode with ultra-low capacitance designed for HDMI 2.0 and USB 3.0. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The extremely low clamping voltage and low RDYN make this device ideal for supporting the next-generation small feature size SoCs. The low capacitance also makes this device ideal for protecting any high-speed signal pins on these sensitive interface pins.
The IO pins can withstand ESD events up to ±16-kV contact and ±16-kV air gap. An ESD-surge clamp diverts the current to ground.
The IO pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The IO pins can withstand surge events up to 2.5 A and 19 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each IO pin to ground is 0.5-pF (typical) and 0.65-pF (maximum). This device supports data rates up to 6 Gbps.
The IO pins feature an ESD clamp that is capable of clamping the voltage to 8.9 V (ITLP = 16 A) and –4.6 V (ITLP = –16 A).
The IO pins feature an ESD clamp that has an extremely low RDYN of 0.25 Ω (IO to GND) and 0.18 Ω (GND to IO) which prevents system damage during ESD events.
The DC breakdown voltage of each IO pin is a minimum of 5 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 3.6 V.
The IO pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of 2.5 V.
This device is capable of supporting high speed interfaces up to 6 Gbps, because of the very low IO capacitance.
This device features an industrial operating range of –40°C to +125°C.
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout.
The TPD1E04U04 is a passive integrated circuit that triggers when voltages are above VBR or below VF. During ESD events, voltages as high as ±16-kV (air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of TPD1E04U04 (usually within 10s of nano-seconds) the device reverts to passive.