The TPDxE05U06-Q1 is a family of unidirectional TVS ESD protection diode arrays with ultra-low capacitance between 0.42 pF and 0.5 pF. They are rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 level 4 international standard (12-kV contact, 15-kV air gap). The ultra-low loading capacitance makes them ideal for protecting any high-speed signal applications up to 6 Gbps.
These devices are qualified to AEC-Q101 standards. They pass HBM H3B (±8 kV) and CDM C5 (±1 kV) ESD ratings and are qualified to operate from –40°C to +125°C.
The I/O pins can withstand ESD events up to ±12-kV contact and ±15-kV air. An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-Ω impedance). An ESD-surge clamp diverts the current to ground.
The I/O pins can withstand surge events up to 2.5 A and 40 W (8/20 µs waveform). An ESD-surge clamp diverts this current to ground.
The capacitance between each I/O pin to ground is 0.5 pF. These capacitances support data rates up to 5 Gbps.
The DC breakdown voltage of each I/O pin is a minimum of 6.4 V. This ensures that sensitive equipment is protected from surges above the reverse standoff voltage of 5 V.
The I/O pins feature an ultra-low leakage current of 10 nA (Maximum) with a bias of 2.5 V.
The I/O pins feature an ESD clamp that is capable of clamping the voltage to 10 V (IPP = 1 A).
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers flow-through routing, requiring minimal modification to an existing layout.
The TPDxE05U06-Q1 are passive integrated circuits that triggers when voltages are above VBR or below the lower diodes Vf (–0.6 V). During ESD events, voltages as high as ±15 kV (air) can be directed to ground via the internal diode network. When the voltages on the protected line fall below the trigger levels of TPDxE05U06-Q1 (usually within 10s of nano-seconds) the devices reverts to passive.