SLVSHN4B December 2023 – July 2025 TPSI3100
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VDDP | Primary side supply voltage(1) | 4.5 | 5.5 | V | |
| EN | Enable VDRV(1) (1) |
0 | 5.5 | V | |
| CE | Chip enable(1) | 0 | 5.5 | V | |
| PGOOD | Power good indicator(4)(1) | 0 | 5.5 | V | |
| FLTn |
Fault indicator(s).(4)(1) FLT1 (TPSI310x, TPSI311x, TPSI3133) FLT2 (TPSI311x) |
0 | 5.5 | V | |
| ALMn |
Alarm indicator(s).(4)(1) ALM1 (TPSI310x, TPSI311x, TPSI3133) ALM2 (TPSI312x) |
0 | 5.5 | V | |
| CVDDP | Decoupling capacitance on VDDP and VSSP(3) | 1 | 20 | µF | |
| CDIV1(2) | Decoupling capacitance across VDDH and VDDM(3) | 0.003 | 15 | µF | |
| CDIV2(2) | Decoupling capacitance across VDDM and VSSS(3) | 0.1 | 40 | µF | |
| QTOTAL | Total charge to be driven by VDRV. | 2500 | nC | ||
| RRESP | Comparator response resistor from RESP to VSSS. | 0 | 1000 | kΩ | |
| IAUX | Auxiliary current sourced from VDDM. | 0 | 5 | mA | |
| TA | Ambient operating temperature | –40 | 125 | °C | |
| TJ | Operating junction temperature | –40 | 150 | °C | |