SLWS224E August 2010 – January 2016 TRF372017
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
The TRF372017 is suited for quadrature up-conversion applications such as wireless radio transmitters.
Table 22 shows the design requirements for this application.
|Gain||–5 to 0 dB||–3.1 dB|
|Noise figure, NF||<21 dB||19 dB|
|3rd order intercept (IIP3)||>+20 dBm||+25 dBm|
|1dB compression (P1dB)||>+10 dBm||+11.5 dBm|
|ACPR||>70 dBc||75 dBc|
|RF output frequency range||1500 to 2500 MHz||300 to 4300 MHz|
|LO input frequency range||1000 to 3000 MHz||300 to 4800 MHz|
|IF input frequency range||DC - 150 MHz||DC - 1 GHz|
|LO phase noise||<–130 dBc/Hz, 1 GHz, 1 MHz offset||–137 dBc/Hz, 1 GHz, 1 MHz offset|
Common-mode voltage on the baseband inputs can be generated either internally or externally. An external interface must provide 1.7-V DC and any necessary filtering. A typical interface to a DAC device is shown in Figure 86.
A typical DAC to TRF372017 interface using internal VCM generation is shown in Figure 87.
The LO outputs are open collector outputs. They require a pullup to VCC. 75-Ω pullup resistors to VCC with local decoupling provides a good broadband match and is shown in an example circuit in Figure 88. An inductor pullup in parallel with a cap can provide a tuned load for excellent narrowband load matching.
Loop filter design is critical for achieving low closed loop phase noise. Some typical loop filter component values are given in Table 23, referenced to designators in Figure 89. These loop filters are designed using charge pump current of 1.94 mA to minimize noise.
|fPFD (MHz)||C1 (pF)||C2 (pF)||R2 (kΩ)||C3 (pF)||R3 (kΩ)||C4 (pF)||R4 (kΩ)|
RF devices may be extremely sensitive to electrostatic discharge (ESD) (see ). To prevent damage from electrostatic discharge (ESD), devices must be stored and handled in a way that prevents the build up of electrostatic voltages that exceed the rated level. Rated electrostatic discharge (ESD) levels shall also not be exceeded while the device is installed on a printed-circuit board.